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DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ

Yıl 2010, Cilt: 25 Sayı: 4, 0 - , 19.02.2013

Levent Gökrem Fatih V. Çelebi Remzi Yıldırım

Öz

Bu çalışmada, GaN HEMT transistörün sıcaklığa bağlı analizi yapılarak Volterra güç serisi üçüncü dereceyekadar açılmış ve küçük işaret transfer fonksiyonları (H1, H2, H3) elde edilmiştir. Birinci çekirdek küçük işarettransfer fonksiyonu (H1) kullanılarak 100K, 300K ve 600K sıcaklık değerlerinde dört-tonlu küçük işaretgirişinden elde edilen intermodülasyon (IMD) frekans bileşenleri, geçit-kaynak (Gate source, Vgs) geriliminebağlı olarak analiz edilmiştir. Çalışmada IMD frekans bileşenleri iki grupta irdelenmiş; birinci grup bileşenler (1-6) ve ikinci grup bileşenler ise (7-17) olarak alınmış ve gruplar arası ve grup içi asimetrik genlik değişimi, kritikfrekans bölgesi, bant genişliği ve IMD haberleşme de değerlendirilmiştir.

Anahtar Kelimeler

HEMT Asimetri Volterra Serisi Sıcaklık Distorsiyon Harmonik.

Kaynakça

  • Fukuta, M., “History of HEMT Transistor”
  • Fujitsu Quantum Devices Limited, 2002.
  • Leong, C.J., Shen, Z. and Tay, L.C., “Small-
  • Signal Modeling of a PHEMT up to 110 GHz
  • Based on The Genetic Algorithm”, Microwave
  • and Optical Technology Letters, Vol.29, No.6,
  • -
  • Tasic, A., Serdijn, W. A. and Long, J.R., “Adaptive
  • Low-Power Circuits for Wireless
  • Communications”, Springer, 2006.
  • Wurtz, L.T., “GaAs FET and HEMT Small-
  • Signal Parameter Extraction From Measured SParameters”,
  • IEEE Transactions on
  • Instrumentation and Measurement, Vol.43,
  • No.4, 1994.
  • Crupi, G., Schreurs, D.M.P., Caddemi, A., “On
  • The Small Signal Modeling of Advanced
  • Microwave FETs: A Comparative Study”, Int.
  • Journal of RF And Micr. Comp.-Aided Eng.,
  • pp. 417–425, May 2008.
  • Crupi, G., Xiao, D., Schreurs, D., Limiti, E.,
  • Caddemi, A., De Raedt, W., Germain, M.,
  • “Accurate Multibias Equivalent Circuit Extraction
  • for GaN HEMTs”, IEEE Trans Microwave
  • Theory Tech., Vol.54, pp. 3616–3622, 2006.
  • Jeon, M.Y., “A Technique to Extract Extrinsic
  • Parameters of HEMTs”, Microwave and Optical
  • Technology Letters, Vol.44, No.6, pp. 489–492,
  • -
  • Kameche, M., Feham, M., Meliani, M.,
  • Benahmet, N., Dalı, S., “Intrinsic Small-Signal
  • Equivalent Circuit of GaAs MESFET’s”, National
  • Centre of Space Techniques, Algeria Telecom
  • Laboratory, University of Tlemcen, Algeria,
  • -
  • Tayrani,R., Gerber, J.E., Daniel, T., Pengelly,
  • R.S., Rhode, U.L., “A New And Reliable Direct
  • Parasitic Extraction Method for MESFETs and
  • HEMTs” European Microwave Conf, pp.451–
  • , Spain, 1993.
  • Chalermwisutkul, D.S., “Large Signal Modeling
  • of GaN HEMTs for UMTS Base Station Power
  • Amplifier Design Taking into Account Memory
  • Effects”, Phd Thesis, 2007.
  • Jarndal, A.H., “Large-Signal Modeling of GaN
  • Device for High Power Amplifier Design” Phd
  • Thesis, 2006.
  • Miras, A., Legros, E., “ Very High-Frequency
  • Small-Signal Equivalent Circuit for Short Gate
  • Length InP HEMT’s”, IEEE Trans. Micr.
  • Theory Tech., Vol. 45, pp. 1018–1026, 1997.
  • Liu, Q.Z., “An Accurate and Simple Large Signal
  • Model of HEMT”, Microwave Symposium
  • Digest, 1989.
  • Jarndal, A. and Kompa, G., “A new Small
  • Modeling Approach to GaN Devices, IEEE
  • Trans Micr. Theory Tech., Vol. 54, pp. 2949–
  • , 2006.
  • Kameche, M., Feham, M., “Simple Techniques
  • for Determining The Small-Signal Equivalent
  • Circuit of MESFET’s” Int. Journal of Infrared
  • and Milimeter Waves, Vol. 27, No. 5, pp. 687–
  • , 2006.
  • Chen, G., Kumar, V., Schwindt, R.S., Adesida, I.,
  • “A Low Gate Bias Model Extraction Technique
  • for AlGaN/GaN HEMTs”, IEEE Trans Micr.
  • Theory Tech., Vol. 54, pp. 2949–2953, 2006.
  • Ahmed, A., Islam, S., Anwar, A.F.M., “A
  • Temperature-Dependent Nonlinear Analysis of
  • GaN/AlGaN HEMTs Using Volterra Series”,
  • IEEE Trans. On Micr. Theory and Tech., Vol.
  • , No. 9, 2001.
  • Ahmed, A., Islam, S., Anwar, A.F.M.,
  • “Frequency and Temperature Dependent of Gain
  • Compression in GaN/AlGaN HEMT Amplifiers ”,
  • Solid-State Electronics, vol.47 pp 339-344, 2003.
  • Fager, C., “Empirical Modeling Of Microwave
  • Devices” Microwave Electronics Lab. Chalmers
  • University of Technology, 1-13, 2007.
  • Ladbrook, P.H., “ MMIC Design GaAs FET
  • and HEMT”, Artech House, Boston 1989.
  • Yıldırım, R., Yavuzcan, H.G., and Gökrem, L.,
  • “Temperature dependent analysis of HEMT's
  • based on gain, power and Rolletti stability”,
  • Technology, 12(3), 201–210, 2009.
  • Maas, S.A., “Nonlinear Microwave and RF
  • Circuits”, Artech House, Second Edition, pp. 26–
  • , 2003.
  • Wambacg, P., Sansen, W., “Distortion Analysis
  • of Analog Integrated Circuits” Kluwer
  • Academic Publishers, 2.Ed., Boston 2001.
  • Srinidhi, E. R., Ma, R., Kompa, G., “Volterra
  • Series-Based Distortion Analysis for Optimization of Out-of-Band Terminations in GaN HEMT
  • Devices” IEEE Elect. Devices Lett., 29(1): 24-
  • , 2008.
  • Pedro, J.C., Carvalho, N.B., “Intermodulation
  • Distortion in Microwave and Wireless
  • Circuits”, Artech House, Boston, 2003.
  • Schetzen, M., “The Volterra and Wiener
  • Theories of Nonlinear Systems”, Malabar, Fla.,
  • R.E. Krieger Publishing Co. reprint edition with
  • additional material, 2006.
  • Bussgang, J.J., and Ehrman, L., “Analysis Of
  • Nonlinear Systems With Multiple Inputs” Proc.
  • IEEE, Vol:62, pp.1088-1119, Aug.1974.
  • Weiner, D.D., and Spina, J.E., “Sinusodial
  • Analysis and Modeling of Weakly Nonlinear
  • Circuits”, Van Nostrand Reinhold Comp. New
  • York, 1980.
  • Çelebi, F.V., Yıldırım, R., “Distortion System
  • Theory of the Two Tone Small signal input Laser
  • Diode” J. Fac. Arch. Gazi. Univ., Vol 20, No 4,
  • pp 373-377, 2005.
  • Yıldırım, R., “Intermodulation Distortion System
  • Theory of The Three-Tone Small Signal Input
  • Laser Diode With Non-Linear Optoelectronic
  • Feedback” J. Fac. Arch. Gazi Univ., Vol 2, pp
  • –430, 2007.
  • Yıldırım, R., “Selection of Frequency
  • Components for Symmetric and Asymmetric
  • Communication Systems” J. Fac. Arch. Gazi
  • Univ., Vol 23, No 2, 329-341, 2008.
  • Schetzen, M., Yildirim, R., Çelebi F.V.,
  • “Intermodulation Distortion of the Single-Mode
  • Laser Diode” Applied Physics B-Lasers and
  • Optics Vol. 93 Iss. 4, pp 837–847, 2008.
  • Gökrem, L., Yüksek Elektron Hareketli
  • Transistör (High Electron Mobility Transistor,
  • HEMT) Distorsiyon Analizi, Doktora Tezi, Gazi
  • Üniversitesi, Fen Bilimleri Enstitüsü, 2009.
  • Yıldırım, R., Yavuzcan, H.G., Çelebi, F.V.,
  • Gökrem, L., “Temperature Dependent Rolletti
  • Stability Analysis of GaN HEMT” Journal of
  • Optoelectronics and Advanced Materials –
  • Rapid Communications, Vol. 3, No. 8, p.781 –
  • , August 2009.
  • Yıldırım, R., Çelebi, F.V., Yavuzcan, H.G.,
  • Gökrem, L., “Asymmetric Condition Computed
  • From The Four Tone Input GaN HEMT”, Int.
  • Conf. on Application of Information and
  • Comm. Techn., AICT 2009, Azerbaycan.

Yıl 2010, Cilt: 25 Sayı: 4, 0 - , 19.02.2013

Levent Gökrem Fatih V. Çelebi Remzi Yıldırım

Öz

Kaynakça

  • Fukuta, M., “History of HEMT Transistor”
  • Fujitsu Quantum Devices Limited, 2002.
  • Leong, C.J., Shen, Z. and Tay, L.C., “Small-
  • Signal Modeling of a PHEMT up to 110 GHz
  • Based on The Genetic Algorithm”, Microwave
  • and Optical Technology Letters, Vol.29, No.6,
  • -
  • Tasic, A., Serdijn, W. A. and Long, J.R., “Adaptive
  • Low-Power Circuits for Wireless
  • Communications”, Springer, 2006.
  • Wurtz, L.T., “GaAs FET and HEMT Small-
  • Signal Parameter Extraction From Measured SParameters”,
  • IEEE Transactions on
  • Instrumentation and Measurement, Vol.43,
  • No.4, 1994.
  • Crupi, G., Schreurs, D.M.P., Caddemi, A., “On
  • The Small Signal Modeling of Advanced
  • Microwave FETs: A Comparative Study”, Int.
  • Journal of RF And Micr. Comp.-Aided Eng.,
  • pp. 417–425, May 2008.
  • Crupi, G., Xiao, D., Schreurs, D., Limiti, E.,
  • Caddemi, A., De Raedt, W., Germain, M.,
  • “Accurate Multibias Equivalent Circuit Extraction
  • for GaN HEMTs”, IEEE Trans Microwave
  • Theory Tech., Vol.54, pp. 3616–3622, 2006.
  • Jeon, M.Y., “A Technique to Extract Extrinsic
  • Parameters of HEMTs”, Microwave and Optical
  • Technology Letters, Vol.44, No.6, pp. 489–492,
  • -
  • Kameche, M., Feham, M., Meliani, M.,
  • Benahmet, N., Dalı, S., “Intrinsic Small-Signal
  • Equivalent Circuit of GaAs MESFET’s”, National
  • Centre of Space Techniques, Algeria Telecom
  • Laboratory, University of Tlemcen, Algeria,
  • -
  • Tayrani,R., Gerber, J.E., Daniel, T., Pengelly,
  • R.S., Rhode, U.L., “A New And Reliable Direct
  • Parasitic Extraction Method for MESFETs and
  • HEMTs” European Microwave Conf, pp.451–
  • , Spain, 1993.
  • Chalermwisutkul, D.S., “Large Signal Modeling
  • of GaN HEMTs for UMTS Base Station Power
  • Amplifier Design Taking into Account Memory
  • Effects”, Phd Thesis, 2007.
  • Jarndal, A.H., “Large-Signal Modeling of GaN
  • Device for High Power Amplifier Design” Phd
  • Thesis, 2006.
  • Miras, A., Legros, E., “ Very High-Frequency
  • Small-Signal Equivalent Circuit for Short Gate
  • Length InP HEMT’s”, IEEE Trans. Micr.
  • Theory Tech., Vol. 45, pp. 1018–1026, 1997.
  • Liu, Q.Z., “An Accurate and Simple Large Signal
  • Model of HEMT”, Microwave Symposium
  • Digest, 1989.
  • Jarndal, A. and Kompa, G., “A new Small
  • Modeling Approach to GaN Devices, IEEE
  • Trans Micr. Theory Tech., Vol. 54, pp. 2949–
  • , 2006.
  • Kameche, M., Feham, M., “Simple Techniques
  • for Determining The Small-Signal Equivalent
  • Circuit of MESFET’s” Int. Journal of Infrared
  • and Milimeter Waves, Vol. 27, No. 5, pp. 687–
  • , 2006.
  • Chen, G., Kumar, V., Schwindt, R.S., Adesida, I.,
  • “A Low Gate Bias Model Extraction Technique
  • for AlGaN/GaN HEMTs”, IEEE Trans Micr.
  • Theory Tech., Vol. 54, pp. 2949–2953, 2006.
  • Ahmed, A., Islam, S., Anwar, A.F.M., “A
  • Temperature-Dependent Nonlinear Analysis of
  • GaN/AlGaN HEMTs Using Volterra Series”,
  • IEEE Trans. On Micr. Theory and Tech., Vol.
  • , No. 9, 2001.
  • Ahmed, A., Islam, S., Anwar, A.F.M.,
  • “Frequency and Temperature Dependent of Gain
  • Compression in GaN/AlGaN HEMT Amplifiers ”,
  • Solid-State Electronics, vol.47 pp 339-344, 2003.
  • Fager, C., “Empirical Modeling Of Microwave
  • Devices” Microwave Electronics Lab. Chalmers
  • University of Technology, 1-13, 2007.
  • Ladbrook, P.H., “ MMIC Design GaAs FET
  • and HEMT”, Artech House, Boston 1989.
  • Yıldırım, R., Yavuzcan, H.G., and Gökrem, L.,
  • “Temperature dependent analysis of HEMT's
  • based on gain, power and Rolletti stability”,
  • Technology, 12(3), 201–210, 2009.
  • Maas, S.A., “Nonlinear Microwave and RF
  • Circuits”, Artech House, Second Edition, pp. 26–
  • , 2003.
  • Wambacg, P., Sansen, W., “Distortion Analysis
  • of Analog Integrated Circuits” Kluwer
  • Academic Publishers, 2.Ed., Boston 2001.
  • Srinidhi, E. R., Ma, R., Kompa, G., “Volterra
  • Series-Based Distortion Analysis for Optimization of Out-of-Band Terminations in GaN HEMT
  • Devices” IEEE Elect. Devices Lett., 29(1): 24-
  • , 2008.
  • Pedro, J.C., Carvalho, N.B., “Intermodulation
  • Distortion in Microwave and Wireless
  • Circuits”, Artech House, Boston, 2003.
  • Schetzen, M., “The Volterra and Wiener
  • Theories of Nonlinear Systems”, Malabar, Fla.,
  • R.E. Krieger Publishing Co. reprint edition with
  • additional material, 2006.
  • Bussgang, J.J., and Ehrman, L., “Analysis Of
  • Nonlinear Systems With Multiple Inputs” Proc.
  • IEEE, Vol:62, pp.1088-1119, Aug.1974.
  • Weiner, D.D., and Spina, J.E., “Sinusodial
  • Analysis and Modeling of Weakly Nonlinear
  • Circuits”, Van Nostrand Reinhold Comp. New
  • York, 1980.
  • Çelebi, F.V., Yıldırım, R., “Distortion System
  • Theory of the Two Tone Small signal input Laser
  • Diode” J. Fac. Arch. Gazi. Univ., Vol 20, No 4,
  • pp 373-377, 2005.
  • Yıldırım, R., “Intermodulation Distortion System
  • Theory of The Three-Tone Small Signal Input
  • Laser Diode With Non-Linear Optoelectronic
  • Feedback” J. Fac. Arch. Gazi Univ., Vol 2, pp
  • –430, 2007.
  • Yıldırım, R., “Selection of Frequency
  • Components for Symmetric and Asymmetric
  • Communication Systems” J. Fac. Arch. Gazi
  • Univ., Vol 23, No 2, 329-341, 2008.
  • Schetzen, M., Yildirim, R., Çelebi F.V.,
  • “Intermodulation Distortion of the Single-Mode
  • Laser Diode” Applied Physics B-Lasers and
  • Optics Vol. 93 Iss. 4, pp 837–847, 2008.
  • Gökrem, L., Yüksek Elektron Hareketli
  • Transistör (High Electron Mobility Transistor,
  • HEMT) Distorsiyon Analizi, Doktora Tezi, Gazi
  • Üniversitesi, Fen Bilimleri Enstitüsü, 2009.
  • Yıldırım, R., Yavuzcan, H.G., Çelebi, F.V.,
  • Gökrem, L., “Temperature Dependent Rolletti
  • Stability Analysis of GaN HEMT” Journal of
  • Optoelectronics and Advanced Materials –
  • Rapid Communications, Vol. 3, No. 8, p.781 –
  • , August 2009.
  • Yıldırım, R., Çelebi, F.V., Yavuzcan, H.G.,
  • Gökrem, L., “Asymmetric Condition Computed
  • From The Four Tone Input GaN HEMT”, Int.
  • Conf. on Application of Information and
  • Comm. Techn., AICT 2009, Azerbaycan.
Toplam 141 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Bölüm Makaleler
Yazarlar

Levent Gökrem Bu kişi benim

Fatih V. Çelebi Bu kişi benim

Remzi Yıldırım Bu kişi benim

Yayımlanma Tarihi 19 Şubat 2013
Gönderilme Tarihi 19 Şubat 2013
Yayımlandığı Sayı Yıl 2010 Cilt: 25 Sayı: 4

Kaynak Göster

APA Gökrem, L., Çelebi, F. V., & Yıldırım, R. (2013). DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ. Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi, 25(4).
AMA Gökrem L, Çelebi FV, Yıldırım R. DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ. GUMMFD. Mart 2013;25(4).
Chicago Gökrem, Levent, Fatih V. Çelebi, ve Remzi Yıldırım. “DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ”. Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi 25, sy. 4 (Mart 2013).
EndNote Gökrem L, Çelebi FV, Yıldırım R (01 Mart 2013) DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ. Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi 25 4
IEEE L. Gökrem, F. V. Çelebi, ve R. Yıldırım, “DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ”, GUMMFD, c. 25, sy. 4, 2013.
ISNAD Gökrem, Levent vd. “DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ”. Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi 25/4 (Mart 2013).
JAMA Gökrem L, Çelebi FV, Yıldırım R. DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ. GUMMFD. 2013;25.
MLA Gökrem, Levent vd. “DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ”. Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi, c. 25, sy. 4, 2013.
Vancouver Gökrem L, Çelebi FV, Yıldırım R. DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ. GUMMFD. 2013;25(4).