Yüksek Sıcaklıkta Tavlanmış Cu Katkılı ZnO (CZO) Arayüzeyli Au/N-Si Yapısının Dielektrik Özelliklerinin Detaylı İncelenmesi

Yıl 2024, Cilt: 5 Sayı: 1, 82 - 89, 29.05.2024

Halil İbrahim Efkere

Öz

Bu çalışmada, Cu katkılı ZnO (CZO) arayüzeye sahip Au/n-Si yapısının dielektrik özellikleri araştırıldı. CZO ince film kaplama, RF püskürtme sistemi ile n-tipi Si levha üzerine gerçekleştirildi. Elektriksel analiz için Au metal kontağı yapılarak cihaz tamamlandı. Au/CZO/n–Si yapısının dielektrik parametreleri türü dielektrik sabiti (ε'), dielektrik kaybı (ε''), dielektrik kayıp tanjantı (tan δ ) ve ac iletkenliği (σ ac) kapasitans (𝐶) parametreleri ve iletkenlik (𝐺) verileri kullanılarak belirlendi. Bu veriler 10 kHz-1 MHz frekans aralığında 1, 2, 3 ve 4V için elde edilmiştir. Analiz sonucunda dielektrik parametrelerinin gerilim değerine bağlı olduğu görülmüştür.

Anahtar Kelimeler

ZnO , CZO , yüksek tavlama sıcaklığı , dielektrik özellikler

Kaynakça

• Shahzad, S., Javed, S., Usman, M. (2021). A review on synthesis and optoelectronic applications of nanostructured ZnO. Frontiers in Materials, 8, 613825.
• Çokduygulular, E., Çetinkaya, Ç., Yalçın, Y., Kınacı, B. (2020). A comprehensive study on Cu-doped ZnO (CZO) interlayered MOS structure. Journal of Materials Science: Materials in Electronics, 31(16), 13646-13656.
• Wang, W., Schiff, E. A. (2007). Polyaniline on crystalline silicon heterojunction solar cells. Applied Physics Letters, 91(13).
• Singh, S. P., Ooi, Z. E., Geok, S. N. L., Goh, G. K., & Dodabalapur, A. (2011). Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors. Applied Physics Letters, 98(7).
• Tataroğlu, A., Altındal, Ş. (2008). Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high–low frequency capacitance and conductance methods. Microelectronic Engineering, 85(11), 2256-2260.
• Kaya, S., Lok, R., Aktag, A., Seidel, J., Yilmaz, E. (2014). Frequency dependent electrical characteristics of BiFeO3 MOS capacitors. Journal of Alloys and Compounds, 583, 476-480.
• Pande, P., Haasmann, D., Han, J., Moghadam, H. A., Tanner, P., Dimitrijev, S. (2020). Electrical characterization of SiC MOS capacitors: A critical review. Microelectronics Reliability, 112, 113790.
• Jin, B., Yan, Q., Dou, Y. (2012). Materials for energy storage and conversion based on metal oxides. Recent Patents on Materials Science, 5(3), 199-212.
• Miranda, G. G., e Silva, R. L. D. S., Banerjee, P., Franco Jr, A. (2020). Role of Ga presence into the heterojunction of metal oxide semiconductor on the stability and tunability ZnO ceramics. Ceramics International, 46(15), 23390-23396.
• Schroder, D. K. (2015). Semiconductor Material and Device Characterization. John Wiley & Sons.
• Shinde, S. S., Shinde, P. S., Oh, Y. W., Haranath, D., Bhosale, C. H., Rajpure, K. Y. (2012). Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films. Applied Surface Science, 258(24), 9969-9976.
• Efkere, H. I., Tataroglu, A., Cetin, S. S., Topaloglu, N., Gonullu, M. P., Ates, H. (2018). The effect of thickness on the optical, structural and electrical properties of ZnO thin film deposited on n-type Si. Journal of Molecular Structure, 1165, 376-380.
• Lehraki, N., Aida, M. S., Abed, S., Attaf, N., Attaf, A., Poulain, M. (2012). ZnO thin films deposition by spray pyrolysis: Influence of precursor solution properties. Current Applied Physics, 12(5), 1283-1287.
• Mahmood, A., Ahmed, N., Raza, Q., Khan, T. M., Mehmood, M., Hassan, M. M., Mahmood, N. (2010). Effect of thermal annealing on the structural and optical properties of ZnO thin films deposited by the reactive e-beam evaporation technique. Physica Scripta, 82(6), 065801.
• Sima, C., Grigoriu, C., Toma, O., & Antohe, S. (2015). Study of dye sensitized solar cells based on ZnO photoelectrodes deposited by laser ablation and doctor blade methods. Thin Solid Films, 597, 206-211.
• Kınacı, B., Çelik, E., Çokduygulular, E., Çetinkaya, Ç., Yalçın, Y., Efkere, H. İ., Özçelik, S. (2021). Effect of annealing on the surface morphology and current–voltage characterization of a CZO structure prepared by RF magnetron sputtering. Semiconductors, 55, 28-36.
• Kınacı, B. (2022). Dielectric properties of Au/SrTiO3/p-Si structure obtained by RF magnetron sputtering in a wide frequency range. Silicon, 14(6), 2717-2722.
• Badali, Y., Farazin, J., Pirgholi-Givi, G., Altındal, Ş., Azizian-Kalandaragh, Y. (2021). Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures. Applied Physics A, 127, 1-11.
• Altındal, Ş., Ulusoy, M., Özçelik, S., Azizian-Kalandaragh, Y. (2021). On the frequency-dependent complex-dielectric, complex-electric modulus and conductivity in Au/(NiS: PVP)/n-Si structures. Journal of Materials Science: Materials in Electronics, 32, 20071-20081.
• Akbaş, A. M., Tataroğlu, A., Altındal, Ş., Azizian-Kalandaragh, Y. (2021). Frequency dependence of the dielectric properties of Au/(NG: PVP)/n-Si structures. Journal of Materials Science: Materials in Electronics, 32, 7657-7670.
• Yerişkin, S. A., Tanrıkulu, E. E., Ulusoy, M. (2023). Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency. Materials Chemistry and Physics, 303, 127788.