MoO3 Arayüzey Tabakalı Metal/Yarıiletken Yapısının Düşük Frekans Değerleri için Dielektrik Özelliklerinin İncelenmesi

Yıl 2021, Cilt: 2 Sayı: 1, 24 - 33, 01.05.2021

Yunus Özen , Halil İbrahim Efkere , Tarik Asar , Süleyman Özçelik

https://doi.org/10.5281/zenodo.4843216

Öz

Bu çalışmada, Molibden trioksit (MoO3) ara tabakalı Au/n-GaAs yapısının dielektrik özellikleri 0-4 V aralığında 0.25 V adımlarla düşük frekanslar için incelendi. MoO3 ince filmi radyo frekansı (RF) magnetron püskürtme yöntemi kullanılarak n-tipi GaAs alttaş üzerine biriktirildi. Au/MoO3/n-GaAs yapısının oda sıcaklığında 10, 20, 30, 50, 70 ve 100 kHz frekanslarında, kapasitans–voltaj (C–V) ve kondüktans–voltaj (G/–V) ölçümleri yapıldı. Bu ölçüm sonucunda C ve G dataları kullanılarak Au/MoO3/n-GaAs yapısının dielektrik parametreleri belirlendi. Dielektrik sabiti (𝜀′), dielektrik kayıp (𝜀′′), dielektrik kayıp tanjantı (tan) elektriksel modülüsün (M) gerçel kısmı (𝑀′), sanal kısmı (𝑀′′) ve elektrik iletkenliği (𝜎𝑎𝑐) gibi dielektrik parametreler frekansa bağlı olarak hesaplandı. Elde edilen sonuçlara göre, MoO3 arayüzey tabakasının kapasitör uygulamaları için uygun olduğu görüldü.

Anahtar Kelimeler

Au/MoO3/n-GaAs yapısı, C-V ve G/w-V ölçümleri, Düşük frekans analizi, Dielektrik parametreler

Kaynakça

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