Numerical Investigation and Optimization of a GeSe/Sb2Se3 Double Absorber Layer Thin-Film Solar Cell Using SCAPS-1D

Öz

In this study, a novel FTO/SnS2/GeSe/Sb2Se3/NiOx/Au double absorber layer thin-film solar cell is designed and numerically optimized using the SCAPS-1D simulator. The device employs earth-abundant, non-toxic absorber materials (GeSe and Sb2Se3) with favorable optoelectronic properties, SnS2 as the electron transport layer, and NiOx as the hole transport layer. A systematic parametric study is performed on the thickness, defect density, and doping concentration of each functional layer to identify the dominant performance-limiting factors. The non-optimized baseline device yields a power conversion efficiency (PCE) of 20.70%, with an open-circuit voltage (Voc) of 0.82 V, a short-circuit current density (Jsc) of 40.64 mA/cm2, and a fill factor (FF) of 62.12%. The analysis reveals that the GeSe/Sb2Se3 interface defect density is the primary factor governing device performance; reducing it from 1012 to 1010 cm-2 significantly enhances Voc from 0.82 V to 1.05 V. The fully optimized device achieves a theoretical PCE of 29.69% (Voc = 1.05 V, Jsc = 41.57 mA/cm2, FF = 67.96%) under standard AM 1.5G illumination at 300 K, while incorporating series (3 Ω·cm2) and shunt (1000 Ω·cm2) resistances yields a more realistic PCE of 24.84%. These results demonstrate that the proposed heterostructure is a promising candidate for next-generation lead-free thin-film photovoltaics.

Anahtar Kelimeler

• Thin-film solar cell
• double absorber layer
• GeSe
• Sb2Se3
• SnS2
• NiOx
• SCAPS-1D
• numerical simulation

SCAPS-1D Kullanılarak GeSe/Sb2Se3 Çift Soğurucu Katmanlı İnce Film Güneş Hücresinin Sayısal İncelenmesi ve Optimizasyonu

Öz

Bu çalışmada, FTO/SnS2/GeSe/Sb2Se3/NiOx/Au yapısına sahip çift soğurucu katmanlı ince film güneş pili SCAPS-1D simülatörü kullanılarak tasarlanmış ve sayısal olarak optimize edilmiştir. Cihaz, toksik olmayan ve doğada bol bulunan soğurucu malzemeler (GeSe ve Sb2Se3), elektron taşıma katmanı olarak SnS2 ve delik taşıma katmanı olarak NiOx kullanmaktadır. Her fonksiyonel katmanın kalınlığı, kusur yoğunluğu ve katkılama konsantrasyonu üzerinde sistematik bir parametrik çalışma gerçekleştirilmiştir. Optimize edilmemiş başlangıç cihazı, %20,70 güç dönüşüm verimliliği (PCE), 0,82 V açık devre gerilimi (Voc), 40,64 mA/cm2 kısa devre akım yoğunluğu (Jsc) ve %62,12 doluluk faktörü (FF) değerleri vermiştir. Analiz, GeSe/Sb2Se3 arayüz kusur yoğunluğunun cihaz performansını belirleyen birincil faktör olduğunu ortaya koymuştur; bu yoğunluğun 1012’den 1010 cm-2’ye düşürülmesi Voc değerini 0,82 V’den 1,05 V’ye önemli ölçüde artırmıştır. Tüm parametrelerin optimize edilmesiyle, standart AM 1.5G aydınlatma koşullarında 300 K’de teorik olarak %29,69 PCE (Voc = 1,05 V, Jsc = 41,57 mA/cm2, FF = %67,96) elde edilmiş; seri (3 Ω·cm2) ve şönt (1000 Ω·cm2) dirençlerinin dahil edilmesiyle daha gerçekçi bir PCE değeri olan %24,84’e ulaşılmıştır. Bu sonuçlar, önerilen heteroyapının gelecek nesil kurşunsuz ince film fotovoltaikler için umut verici bir aday olduğunu göstermektedir.

Anahtar Kelimeler

• İnce film güneş hücresi
• çift soğurucu katman
• kurşun içermeyen
• GeSe
• Sb2Se3
• SnS2
• NiOx
• SCAPS-1D

Kaynakça

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