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METAL-OKSİT-YARIİLETKEN (MOS) KAPASİTÖRÜN DİELEKTRİK PARAMETRELERİNİN FREKANS VE SICAKLIK BAĞIMLILIĞI

Yıl 2016, Cilt: 4 Sayı: 2, 65 - 70, 10.06.2016

Adem Tataroğlu

Öz

Bu çalışmada,  silisyum nitrür (Si3N4) oksit tabakalı MOS kapasitörün dielektrik parametreleri araştırılmıştır. Admitans ölçümleri (kapasitans ve iletkenlik), 300-400 K sıcaklık aralığında üç farklı frekans için (100, 500 ve 1000 kHz) gerçekleştirildi. MOS kapasitörün dielektrik parametreleri bu ölçümler kullanılarak hesaplandı. Dielektrik sabiti (ε') ve kayıp (ε'') artan sıcaklıkla artarken artan frekansla azalmaktadır. Elde edilen ac iletkenlik(sac) değerleri artan sıcaklık ve frekans ile artmaktadır. Ayrıca, elektriksel iletkenliğin Arrhenius eğrileri (lnsac-1000/T), 300-320 K ve 340-400 K sıcaklık aralığında farklı eğimli iki lineer bölge gösterdi. Aktivasyon enerjileri (Ea), iki lineer bölgenin eğiminden hesaplandı.

Anahtar Kelimeler

MOS kapasitör admitans ölçümleri dielektrik parametreler

Kaynakça

  • Nicollian E.H., Brews J.R., “MOS Physics and Technology”, Wiley, New York, 1982.
  • Sze S.M., Kwok K.N. “Physics of Semiconductor Devices”, Wiley, New Jersey, 2007.
  • Richman P., “MOS Field-Effect Transistors and Integrated Circuits”, Wiley, New York, 1973.
  • McNutt M.J., Sah C.T., “Determination of the MOS oxide capacitance” J. Appl. Phys. 46,
  • -3913, 1975.
  • Terman M., “An investigation of surface states at silicon-silicon oxide interface employing metal
  • oxide silicon diodes”, Solid State Electron. 5, 285-299, 1962.
  • Popescu M., Bunget I., “Physics of Solid Dielectrics”, Elsevier, Amsterdam, 1984.
  • Kwa, C.K., “Dielectric Phenomena in Solids”, Elsevier, Amsterdam, 2004.
  • Chelkowski A., “Dielectric Physics”, Elsevier, Amsterdam, 1980.
  • Ertuğrul R., Tataroğlu A., “Influence of Temperature and Frequency on Dielectric Permittivity and
  • ac Conductivity of Au/SnO2/n-Si (MOS) Structures” Chin. Phys. Lett. 29, 077304, 2012.
  • Elkestawy M.A., Abdel Kader S., Amer M.A., “AC conductivity and dielectric properties of
  • Ti-doped CoCr1.2Fe0.8O4 spinel ferrite”, Physica B 405, 619-624, 2010.
  • Ali H.A.M., Soliman H.S., Saadeldin M., Sawaby K., “Frequency dependence of dielectric
  • properties and conductivity of bulk copper sulphide”, Mater. Sci. Semicon. Process. 18, 141-145,
  • Tataroğlu A., Altındal Ş., Bülbül M.M., “Temperature and frequency dependent electrical and
  • dielectric properties of Al/SiO2/p-Si (MOS) structure”, Microelectron. Eng. 81, 140-149, 2005.
  • Ataseven T., Tataroğlu A., “Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal-
  • insulator-semiconductor) structures”, Chin. Phys. B 22, 117310, 2013.
  • Card H.C., Rhoderick E.H., ‘‘Studies of tunnel MOS diodes I. Interface effects in silicon Schottky
  • diodes’’ J. Phys. D: Appl. Phys., 4, 1589-1601, 1971.
  • Kar S., Dahlke W. E., “Interface states in MOS structures with 20-40 Å thick SiO2 films on
  • nondegenerate Si”, Solid-State Electron. 15, 221-237, 1972.
  • Tareev B., “Physics of Dielectric Materials”, Mir Publishers, Moscow, 1979.
  • Raju G.G., “Dielectrics in Electric Fields”, Marcel Dekker, New York, 2003.
  • Eroğlu A., Tataroğlu A., Altındal Ş., “On the temperature dependent dielectric properties,
  • conductivity and resistivity of MIS structures at 1 MHz”, Microelectron. Eng. 91, 154-158. 2012.
  • Sattar A.A., Rahman S.A., “Dielectric Properties of Rare Earth Substituted Cu–Zn Ferrites”, Phys.
  • Status Solidi A 200, 415-422, 2003.
  • Ram M., Chakrabarti S., “Dielectric and modulus behavior of LiFe1/2Ni1/2VO4 ceramics”,
  • J. Phys. Chem. Solids 69, 905-912, 2008.
  • Prabakar K., Narayandass S.K., Mangalaraj D., “Dielectric properties of Cd0.6Zn0.4Te thin
  • films”, Phys. Status Solidi A 199, 507-514, 2003.
  • Yakuphanoğlu, F., Zaitsev, D.D., Trusov, L.A., Kazin, P.E., “Electrical conductivity and electrical
  • modulus properties of 13SrO-5.5Fe2O3-0.5Al2O3-8B2O3 magnetic glass ceramic”, J. Mag. Mag.
  • Mater. 312: 43-47, 2007.
  • El-Nahass M.M., Atta A.A., El-Zaidia E.F.M., Farag A.A.M., Ammar A.H., “Electrical
  • conductivity and dielectric measurements of CoMTPP”, Mater. Chem. Phys. 143, 490-494. 2014.
  • Sahay P. P., Mishra R. K., Pandey S. N., Jha S., Shamsuddin M. “AC transport properties of
  • nanocrystalline SnO2 semiconductor”, Ceram. Int., 38, 1281-1286, 2012.
  • Muthulakshmi S., Iyyapushpam S., Padiyan D.P. “Effect of temperature on the AC impedance
  • of protein and carbohydrate biopolymers”, Bulletin Mater. Sci. 37, 1575-1582, 2014.

Yıl 2016, Cilt: 4 Sayı: 2, 65 - 70, 10.06.2016

Adem Tataroğlu

Öz

Kaynakça

  • Nicollian E.H., Brews J.R., “MOS Physics and Technology”, Wiley, New York, 1982.
  • Sze S.M., Kwok K.N. “Physics of Semiconductor Devices”, Wiley, New Jersey, 2007.
  • Richman P., “MOS Field-Effect Transistors and Integrated Circuits”, Wiley, New York, 1973.
  • McNutt M.J., Sah C.T., “Determination of the MOS oxide capacitance” J. Appl. Phys. 46,
  • -3913, 1975.
  • Terman M., “An investigation of surface states at silicon-silicon oxide interface employing metal
  • oxide silicon diodes”, Solid State Electron. 5, 285-299, 1962.
  • Popescu M., Bunget I., “Physics of Solid Dielectrics”, Elsevier, Amsterdam, 1984.
  • Kwa, C.K., “Dielectric Phenomena in Solids”, Elsevier, Amsterdam, 2004.
  • Chelkowski A., “Dielectric Physics”, Elsevier, Amsterdam, 1980.
  • Ertuğrul R., Tataroğlu A., “Influence of Temperature and Frequency on Dielectric Permittivity and
  • ac Conductivity of Au/SnO2/n-Si (MOS) Structures” Chin. Phys. Lett. 29, 077304, 2012.
  • Elkestawy M.A., Abdel Kader S., Amer M.A., “AC conductivity and dielectric properties of
  • Ti-doped CoCr1.2Fe0.8O4 spinel ferrite”, Physica B 405, 619-624, 2010.
  • Ali H.A.M., Soliman H.S., Saadeldin M., Sawaby K., “Frequency dependence of dielectric
  • properties and conductivity of bulk copper sulphide”, Mater. Sci. Semicon. Process. 18, 141-145,
  • Tataroğlu A., Altındal Ş., Bülbül M.M., “Temperature and frequency dependent electrical and
  • dielectric properties of Al/SiO2/p-Si (MOS) structure”, Microelectron. Eng. 81, 140-149, 2005.
  • Ataseven T., Tataroğlu A., “Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal-
  • insulator-semiconductor) structures”, Chin. Phys. B 22, 117310, 2013.
  • Card H.C., Rhoderick E.H., ‘‘Studies of tunnel MOS diodes I. Interface effects in silicon Schottky
  • diodes’’ J. Phys. D: Appl. Phys., 4, 1589-1601, 1971.
  • Kar S., Dahlke W. E., “Interface states in MOS structures with 20-40 Å thick SiO2 films on
  • nondegenerate Si”, Solid-State Electron. 15, 221-237, 1972.
  • Tareev B., “Physics of Dielectric Materials”, Mir Publishers, Moscow, 1979.
  • Raju G.G., “Dielectrics in Electric Fields”, Marcel Dekker, New York, 2003.
  • Eroğlu A., Tataroğlu A., Altındal Ş., “On the temperature dependent dielectric properties,
  • conductivity and resistivity of MIS structures at 1 MHz”, Microelectron. Eng. 91, 154-158. 2012.
  • Sattar A.A., Rahman S.A., “Dielectric Properties of Rare Earth Substituted Cu–Zn Ferrites”, Phys.
  • Status Solidi A 200, 415-422, 2003.
  • Ram M., Chakrabarti S., “Dielectric and modulus behavior of LiFe1/2Ni1/2VO4 ceramics”,
  • J. Phys. Chem. Solids 69, 905-912, 2008.
  • Prabakar K., Narayandass S.K., Mangalaraj D., “Dielectric properties of Cd0.6Zn0.4Te thin
  • films”, Phys. Status Solidi A 199, 507-514, 2003.
  • Yakuphanoğlu, F., Zaitsev, D.D., Trusov, L.A., Kazin, P.E., “Electrical conductivity and electrical
  • modulus properties of 13SrO-5.5Fe2O3-0.5Al2O3-8B2O3 magnetic glass ceramic”, J. Mag. Mag.
  • Mater. 312: 43-47, 2007.
  • El-Nahass M.M., Atta A.A., El-Zaidia E.F.M., Farag A.A.M., Ammar A.H., “Electrical
  • conductivity and dielectric measurements of CoMTPP”, Mater. Chem. Phys. 143, 490-494. 2014.
  • Sahay P. P., Mishra R. K., Pandey S. N., Jha S., Shamsuddin M. “AC transport properties of
  • nanocrystalline SnO2 semiconductor”, Ceram. Int., 38, 1281-1286, 2012.
  • Muthulakshmi S., Iyyapushpam S., Padiyan D.P. “Effect of temperature on the AC impedance
  • of protein and carbohydrate biopolymers”, Bulletin Mater. Sci. 37, 1575-1582, 2014.
Toplam 43 adet kaynakça vardır.

Ayrıntılar

Bölüm Makaleler
Yazarlar

Adem Tataroğlu

Yayımlanma Tarihi 10 Haziran 2016
Gönderilme Tarihi 13 Mayıs 2016
Yayımlandığı Sayı Yıl 2016 Cilt: 4 Sayı: 2

Kaynak Göster

APA Tataroğlu, A. (2016). METAL-OKSİT-YARIİLETKEN (MOS) KAPASİTÖRÜN DİELEKTRİK PARAMETRELERİNİN FREKANS VE SICAKLIK BAĞIMLILIĞI. Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji, 4(2), 65-70.

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