PbS Kuantum Nokta İnce Filmlerin Üretilmesi ve Karakterizasyonu

Yıl 2020, Cilt: 8 Sayı: 4, 1021 - 1033, 29.12.2020

İdris Candan

https://doi.org/10.29109/gujsc.825327

Öz

Bu çalışmada, kurşun sülfür kuantum nokta (PbS QD) ince filmler dönel kaplama yöntemi kullanılarak soda-kireç silikat cam alttaşlar üzerine üretildi. Kuantum nokta ince film numunelerinin optik özelliklerini araştırmak için soğurma spektroskopisi ve fotolüminesans (PL) emisyon spektroskopisi yöntemleri kullanıldı. Spektroskopik yöntem sonuçları, üretilen ince filmlerin beklenildiği gibi optik olarak yakın kızılötesi bölgesinde (near-IR) aktif olduğu gösterdi. Üretilen kuantum nokta ince filmlerin yapısal özelliklerinin tayini için eş odaklı Raman spektroskopisi, atomik kuvvet mikroskobu (AFM) ve taramalı elektron mikroskobu (SEM) ölçümleri yapıldı. Raman spektroskopisi sonuçlarında, PbS yapısının enine optik modu (TO) ve boyuna optik modu (LO) gözlendi. Üretilen filmlerin AFM analizlerinden yüzey pürüzlülüğü 2.11 nm ve yüzeydeki partikül boyutlarının ortalama 0.5 nm ile 1.0 nm aralığında değiştiği hesaplandı. SEM görüntülerinden, üretim sonrasında metanol ile yıkama ve ısıl işlem yapılmamış numunelerin yüzeyinde organik bir katman ve yapıları içerisinde çok küçük deliklerin (pinhole) varlığı tespit edildi. Yıkama ve düşük başınç altında ısıl işlem yapılan numunelerin SEM görüntülerinde ise metanol yıkama ile organik tabakanın yapıdan uzaklaştığı ve düşük basınç altında ısıl işlem sonrasında çok küçük deliklerin kuantum noktalar tarafından kapatıldığı görüldü.

Anahtar Kelimeler

Kurşun sülfür kuantum noktalar (PbS QDs), İnce film, Fotolüminesans spektroskopisi (PL), Raman spektroskopisi

Production and Characterization of PbS Quantum Dot Thin Films

Öz

In this study, lead sulfide quantum dot (PbS QD) thin films have been produced onto soda lime silicate glass substrates by spin coating method. Absorption spectroscopy and photoluminescence (PL) emission spectroscopy methods were used to investigate the optical properties of quantum dot thin film samples. Spectroscopic methods indicated that the fabricated thin films were optically active in the near-infrared (near-IR) region as expected. The structural properties of quantum dot thin films were carried out by using confocal Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. The transverse optical mode (TO) and the longitudinal optical mode (LO) of the PbS structure were observed in the Raman spectroscopy results. The AFM analysis of the produced thin films indicated that the surface roughness of the film was 2.11 nm and the particle size on the surface varied in between 0.5 nm and 1.0 nm. In the SEM micro images, the presence of an organic layer and pinholes were detected on the surface and in the structure of samples before washing with methanol and annealing procedures, respectively. The SEM micro images of samples also shown that the organic layer was removed from the film surface by washing with methanol and pinholes was disappered in the film structure after annealing process under the low pressure.

Anahtar Kelimeler

Lead sulfide quantum dots (PbS QDs), Thin films, Photoluminescence spectroscopy (PL), Raman spectroscopy

Kaynakça

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