Synthesis of graphene oxide by modified Hummers method and its effects on Al/GO/n-InP diode performance as interlayer film

Yıl 2021, , 235 - 244, 15.01.2021

Fulya Esra Cimilli Çatır

https://doi.org/10.17714/gumusfenbil.770061

Cited By: 1

Öz

Graphene oxide (GO) was synthesized by the modified Hummers method. The graphene oxide film deposited by using spray pyrolysis on metal-semiconductor interface of Al/GO/n-InP Schottky diode. The effect of GO film on Al/GO/n-InP Schottky diode characteristics was investigated. The structural properties of GO films were determined by X-Ray diffraction measurements (XRD) and scanning electron microscopy (SEM) measurements. The absorbance and transmittance spectra of the GO film were measured and their optical properties were investigated. From the I-V characteristics of the Al/GO/n-InP diode at room temperature, this structure was shown to have a rectifying property. In addition, it was determined that the diode had very good photovoltaic properties from the I-V measurements under dark and 100 mW/cm2 light intensity. The characteristic parameters of the Al/GO/n-InP Schottky diode such as the ideal factor (n), barrier height (Φb0), series resistance (Rs) and shunt resistance (Rsh) were calculated and compared with the reference Al/n-InP diode. The Al/GO/n-InP Schottky diode structure was found to be a suitable material for various electronic and optoelectronic circuit applications.

Anahtar Kelimeler

Absorbance, Graphene oxide, I-V measurements, n-InP, SEM, Transmittance, XRD

Grafen oksitin modifiye Hummers yöntemi ile sentezi ve film olarak Al/GO/n-InP diyot performansına etkileri

Öz

Grafen oksit (GO) modifiye Hummers yöntemi ile sentezlendi. Metal-yarıiletken arayüzeyine spray pyrolysis yöntemiyle büyütülen grafen oksit filmin Al/GO/n-InP Schottky diyot karakteristikleri üzerine etkisi araştırıldı. GO filmlerin yapısal özellikleri X-Işını kırınımı ölçümleri (XRD) ve taramalı elektron mikroskobu (SEM) ölçümleri ile belirlendi. GO filmin absorbans ve transmittans spektrumları alınarak optik özellikleri araştırıldı. Al/GO/n-InP diyotunun oda sıcaklığındaki I-V karakteristiklerinden bu yapının doğrultucu özellik gösterdiği görüldü. Ayrıca, karanlık ve 100 mW/cm2 ışık şiddeti altında yapılan I-V ölçümleri doğrultusunda diyotun oldukça iyi fotovoltaik özelliklere sahip olduğu belirlendi. Al/GO/n-InP Schottky diyotunun idealite faktörü (n) ,engel yüksekliği (Φb0), seri direnç (Rs) ve şönt direnci Rsh gibi karakteristik parametreleri hesaplanarak arayüzey tabakasız referans Al/n-InP diyotu ile karşılaştırıldı. Al/GO/n-InP Schottky diyot yapısının çeşitli elektronik ve optoelektronik devre uygulamaları için uygun bir malzeme olduğu görüldü.

Anahtar Kelimeler

Absorbans, Grafen oksit, I-V ölçümleri, n-InP, SEM, Transmittans, XRD

Kaynakça

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