InSe ve InSe:Sn Yarıiletkenlerinde Farklı Tavlama Sıcaklıkları ve Süreleri için Lineer Soğurma Katsayılarının Belirlenmesi

Yıl 2018, Cilt: 8 Sayı: 2, 365 - 371, 31.07.2018

Burcu Akça Salih Zeki Erzeneoğlu

https://doi.org/10.17714/gumusfenbil.414110

Öz

Bu çalışmada
Bridgman/Stockbarger metodu ile büyütülmüş InSe ve InSe:Sn yarıiletken
kristallerinin farklı tavlama sıcaklıkları ve zamanları için lineer soğurma
katsayıları incelenmiştir. Yarıiletkenlerden geçirilen ²⁴¹Am’in
gamma ışınları yüksek çözünürlüklü Si(Li) detektör tarafında detekte edilmiştir
ve Enerji ayırımlı X-ışını Floresan Spektrometresi (EDXRFS) kullanılmıştır.
InSe ve InSe:Sn yarıiletken kristallerinin lineer soğurma katsayılarının,
tavlama süresi ve sıcaklığının artışıyla genelde arttığı gözlenmiştir.

Anahtar Kelimeler

Bridgman/Stockbarger, EDXRFS, Lineer soğurma katsayısı, InSe

Determination of Linear Attenuation Coefficients for Different Annealing Temperatures and Duration in InSe and InSe:Sn Semiconductors

Öz

In this study have
examined linear attenuation coefficients of InSe and InSe:Sn semiconductor
crystals have been grown by using Bridgman/Stockbarger for different annealing temperature and time. Gamma
rays of ²⁴¹Am passed through semiconductors have been detected by a
high-resolution Si(Li) detector and by using energy dispersive X-ray
fluorescence spectrometer (EDXRFS). It has been observed that
the linear absorption coefficients of InSe and InSe: Sn semiconductor crystals
generally increase with the increase of annealing time and temperature.

Anahtar Kelimeler

Bridgman/Stockbarger, EDXRFS, Linear attenuation Coefficient, InSe

Kaynakça

• Abdinov, A. Sh., Babaeva, R. F., ve Rzaev, R. M., 2012. Electric Field Effect on Photoconductivity Decay in n-InSe Single Crystals. Inorganic Materials, 48(8), 781-785.
• Akça, B., Erzeneoğlu, S. Z., ve Gürbulak, B., 2015. Measurement of γ-ray transmission factors of semiconductor crystals at various annealing temperature and time. Indian Journal of Pure & Applied Physics, 53(1), 49-55.
• Choi, In.H., ve Peter Y. Yu., 2003. Properties of phase-pure InSe films prepared by metalorganic chemical vapor deposition with a single-source precursor. Journal of Applied Physics, 93(8), 4673-4677.
• Darwish, A., A., A., El-Nahass, M., M., ve Bahlol, M., N., 2013. Structural and electrical studies on nanostructured InSe thin films. Applied Surface Science, 2716, 210-216.
• Erzeneoğlu, S., İçelli, O., Gürbulak, B., ve Ateş, A., 2006. Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge. Journal of Quantitative Spectroscopy & Radiative Transfer, 102(3), 343-347.
• Imai, K., Suzuki, K., Haga, T., Haegawa, Y., Abe, Y., 1981. Phase diagram of In-Se system and crystal growth of indium monoselenide. Journal of Crystal Growth, 54, 501-506.
• İçelli, O., Erzeneoğlu, S., ve Gürbulak, B., 2005. Mass Attenuation Coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er Single Crystals. Journal of Quantitative Spectroscopy & Radiative Transfer, 90(3-4), 399-407.
• Mooser, E., Ed., 1976. Physics and Chemistry of Material With Layered Structure, (Riedel, Dordrecht,).
• Neamen, D. A., 2003, Semiconductor Physics and Devices Basic Principles, Third Edition, University of New Mexico.
• Olguin, D., Canterero, A., ve Syassen, U.K., 2003. Effect of Pressure on Structural roperties and Energy Band Gaps γ-InSe. Physica Status Solidi B, 235(2), 456-463.
• Pellicer-Pores, J., Segura, A., Ferrer, Ch., Munoz, V., San Miguel, A., Polian, A., Itie, J.P., Gauthier, M., ve Pascarelli, S., 2002. High-pressure X-ray-absorption study of GaSe, Physical Review B, 65(1), 174103-7.
• Segura A., Guesdon, J., P., Besson, J., M., ve Chevy, A., 1983. Photoconductivity and photovoltaic effect in indium selenide. Journal of Applied Physics, 54(2), 876-889.