Synthesis and Characterization of Cu2CoSnS4 (CCTS) Absorber Material for Renewable Energy Applications

Yıl 2025, Cilt: 9 Sayı: 2, 149 - 154, 29.12.2025

Ahmet Tumbul

https://doi.org/10.46460/ijiea.1689650

Öz

Presented report, Cu2CoSnS4 (CCTS) semiconductor was growth on glass substrate by using chemical routes. The physical properties of sample were qualified by using XRD Raman spectrometer, SEM with EDS, UV-Vis spectrometer and AFM. The XRD measurement confirmed that the CCTS has stannite crystal structure with a preferential orientation throughout the (112) direction. The Raman measurement verified the presence of characteristic peak which occurred at 320 cm-1 correspond A1 vibrational mode. The EDS spectrum with mapping revealed the existence of the elements ( S, Sn, Co, Cu) in compound and these elements homogeneously distrubuted on the surfaces of the sample. The combination of AFM and SEM characterization highlighted the structural integrity of the CCTS thin film. Optical absorbance analyses showed the band gap value of sample (~1.33 eV) was suitable for solar cell applications. Besides, ıt could be said that fabricated device n-ITO/p-CCTS/Ag was convenient to use in renewable energy applications. These findings open up the possibility to explore new generation materials which have abundant elements in earth crust without any dangerous and rare/costly elements such as selenium, gallium, and indium.

Anahtar Kelimeler

Cu2CoSnS4 semiconductor , Solution process , Thin film absorber , Sulfur-rich stoichiometry

Etik Beyan

Ethics committee approval is not required

Yenilenebilir Enerji Uygulamaları için Cu2CoSnS4 (CCTS) Soğurucu Malzeme Sentezi ve Karakterizasyonu

Öz

Bu çalışmada kimyasal kaplama tekniği kullanılarak Cu2CoSnS4 (CCTS) yarıiletken ince film sentezlenmiştir. Üretilen örneğin fiziksel özellikleri XRD, Raman Spektrometresi, SEM, EDS, AFM ve UV-Vis Spektrometresi kullanılarak incelenmiştir. X-ışını ölçümleri CCTS yarıiletkenin (112) tercihli yönelimli stanit kristal yapısında olduğunu göstermiştir. Ayrıca raman ölçümünden de 320 cm-1 konumundaki pikin CCTS yarıiletken malzemesinin A1 titreşim moduna ait olduğu doğrulanmıştır. Enerji Dağılımlı X-ışını vet haritalama teknikleri malzemenin yapısında bulunan Cu, Co, Sn, S elementlerinin ince film yüzeyine homojen bir şekilde dağıldıgını ortaya koymuştur. AFM ve SEM karakterizasyonu CCTS ince filmin yapısal bütünlügünün vurgulamıştır. Optik soğurma analizi ile CCTS ince filmin yasak enerji band değerinin yaklaşık 1.33 eV oldugunu ve bu değerin güneş hücresi uygulamaları için ideal olduğu gösterilmiştir. Bunun yanında üretilen n-ITO/p-CCTs/Ag cihazının yenilenebilir enerji uygulamaları için kullanılmaya elverişli oldugu söylenebilir. Bu bulgular; selenyum, galyum ve indiyum gibi tehlikeli, doğada az bulunan ve maliyetli elementler içermeyen, yeni nesil malzemelerin araştırılmasına olanak sağlamaktadır.

Anahtar Kelimeler

Cu2CoSnS4 yarıiletkeni , Çözelti yöntemi , İnce film soğurucu , Sülfür-zengin kimyasal içerik.

Kaynakça

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