The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
Öz
Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.
Anahtar Kelimeler
Metal organic vapor phase epitaxy, Gallium nitride, Epitaxy, Characterization, XRD
Destekleyen Kurum
TUBİTAK
Proje Numarası
113G103 and 115E109
Teşekkür
The author acknowledges the usage of the Nanophotonics Research and Application Center at Cumhuriyet University (CUNAM) facilities. This study is supported by the TUBITAK under project nos. 113G103 and 115E109. The author thanks Ms. A. Alev Kizilbulut from ERMAKSAN Optoelectronics for PL measurements.
Kaynakça
- [1] Jain, S., Willander, M., Narayan, J., Overstraeten, R. V., “III–nitrides: Growth, characterization, and properties”, Journal of Applied Physics, 87(3):965-1006, (2000).
- [2] Demir, I., “Growth temperature dependency of high Al content AlGaN epilayers on AlN/Al2O3 templates”, Cumhuriyet Science Journal, 39(3):728-733, (2018).
- [3] Demir, I., Li, H., Robin, Y., McClintock, R., Elagoz, S., Razeghi, M., “Sandwich method to grow high quality AlN by MOCVD”, Journal of Physics D: Applied Physics, 51(8):085104 (2018).
- [4] Demir, I., Robin, Y., McClintock, R., Elagoz, S., Zekentes, K., Razeghi, M., “Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy”, Physica Status Solidi (a), 214(4):1600363 (2017).
- [5] Fan, X., Xu, S., Li, P., Zhang, J., Peng, R., Zhao, Y., Du, J., Hao, Y., “Nonpolar and semipolar ultraviolet multiple quantum wells on GaN/sapphire”, Materials Science in Semiconductor Processing, 92:103-107 (2019).
- [6] Genç, M., Sheremet, V., Altuntaş, I., Demir, I., Gür, E., Elagöz, S., Gülseren, O., Özgür, U., Avrutin, V., Morkoç, H., “PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs”, Gallium Nitride Materials and Devices XV, International Society for Optics and Photonics, 112800O (2020).
- [7] Genç, M., Sheremet, V., Elçi, M., Kasapoğlu, A., Altuntaş, I., Demir, I, Eğin, G., Islamoğlu, S., Gür, E., Muzafferoğlu, N., “Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs”, Superlattices and Microstructures, 128:9-13 (2019).
- [8] Remesh, N., Kumar, S., Guiney, I., Humphreys, C. J., Raghavan, S., Muralidharan, R., Nath, D.,N., “A Novel Technique to Investigate the Role of Traps in the Off-State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias”, Physica Status Solidi (a), 217(7):1900794 (2019).
- [9] Robin, Y., Ding, K., Demir, I., McClintock, R., Elagoz, S., Razeghi, M., “High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate”, Materials Science in Semiconductor Processing, 90:87-91 (2019).
- [10] Taya, P., Singh, V., Jana, D., Tyagi, R., Sharma, T., “Optical characterization of InAlN/AlN/InGaN/GaN/sapphire high electron mobility transistor structures”, AIP Conference Proceedings, AIP Publishing LLC, 030467 (2019).