The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

Yıl 2021, Cilt: 5 Sayı: 1, 6 - 10, 28.06.2021

İsmail Altuntas , Sezai Elagöz

https://doi.org/10.46460/ijiea.898795

Cited By: 1

Öz

Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.

Anahtar Kelimeler

Metal organic vapor phase epitaxy, Gallium nitride, Epitaxy, Characterization, XRD

Destekleyen Kurum

TUBİTAK

Proje Numarası

113G103 and 115E109

Teşekkür

The author acknowledges the usage of the Nanophotonics Research and Application Center at Cumhuriyet University (CUNAM) facilities. This study is supported by the TUBITAK under project nos. 113G103 and 115E109. The author thanks Ms. A. Alev Kizilbulut from ERMAKSAN Optoelectronics for PL measurements.

MOVPE ile büyütülen GaN Epitabaka: Farklı Çekirdeklenme Tabakası Sıcaklığının Etkisi

Öz

Farklı çekirdek tabakası sıcaklıklarının (LT-GaN büyüme sıcaklığı), MOVPE tarafından büyütülen sonraki GaN epitabakasının özellikleri üzerindeki etkisi araştırılmıştır. Yerinde yansıma eğrileri, daha yüksek LT-GaN büyüme sıcaklıklarının GaN çekirdeklenme adalarının hızlı birleşmesine (daha kısa geçiş süresi) neden olduğunu göstermektedir. Sırasıyla, hem fotolüminesans (PL) hem de yüksek çözünürlüklü x-ışını kırınımı (HRXRD), LT-GaN büyüme sıcaklığının sonraki GaN epilayerinin optik ve yapısal özellikleri üzerindeki etkisini göstermek için kullanıldı. LT-GaN büyüme sıcaklığındaki değişimin hem HRXRD ölçümü sonuçlarından elde edilen yarı maksimumda tam genişlik (FWHM) değerleri hem de sarı lüminesans tepe yoğunluğu üzerinde etkisi olduğu görülmüştür. Örnekler için sarı lüminesans tepe yoğunluklarının LT-GaN büyüme sıcaklığı ile değiştiği görülmüştür.

Anahtar Kelimeler

Metal Organik Buhar Faz Epitaksi, Galyum Nitrür, Epitaksi, Karakterizasyon, XRD

Proje Numarası

113G103 and 115E109

Kaynakça

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