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Investigation Of Current-Voltage Measurements of GaAs /AlxGa1−XAs Multiple Quantum Wells with Metal Organic Vapour Phase Epitaxy

Yıl 2021, Cilt: 5 Sayı: 1, 45 - 48, 28.06.2021
https://doi.org/10.46460/ijiea.915840

Öz

In this study, we have investigated the temperature dependence of Current-Voltage measurements of GaAs /AlGaAs multi-quantum well. Our sample, which consists of inclined layers between the 10 periods GaAs /Al_0.25 Ga_0.75 As quantum wells and n^+-GaAs contact layers in the central region, was grown by the Metal Organic Vapor Phase Epitaxy technique. We have found that tunneling current is effective at low temperatures (<85 K) and high voltages as well as thermal current at high temperatures (> 125 K) and low voltages. In addition, in the intermediate temperature region (65 K

Kaynakça

  • [1].Rafol, D., Cho, E., Lim, W., 2007. Characterization of very large format 1Kx1K LWIR QWIP focal plane array. Proceedings Volume 6678, Infrared Spaceborne Remote Sensing and Instrumentation XV; 66780X, San Diego, California, United States.
  • [2].Robo, J., Costard, E, Truffer, J., Nedelcu, A., Marcadet, X., Bois, P., 2009. QWIP focal plane arrays performances from MWIR up to VLWIR.
  • [3].Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72980F, San Diego, California, United States.
  • [4].Reibel, Y., Rubaldo, L., Manissadjian, A., Billon-Lanfrey, D., Rothman, J., de Borniol, E., Destéfanis, G., Costard, E., 2012. High-performance MCT and QWIP IR detectors at Sofradir. Electro-Optical and Infrared Systems: Technology and Applications IX. Proceedings of the SPIE, Volume 8541, article id. 85410A, 11., Edinburgh, United Kingdom.
  • [5].Gunapala, SD., Bandara, SV., Liu, JK., Mumolo, JM., Rafol, SB., Ting, DZ., Soibel, A., Hill, C., 2014. IEEE Journal of Selected Topics in Quantum Electronics. 20 (6) :3802312.
  • [6].Martijn, H., Gamfeldt, A., Asplund, C., Smuk, S., Kataria, H., Costard, E., 2016. QWIPs at IR nova, a status update. Proceedings of SPIE. 9819: 981918.
  • [7].Rogalski, A., 1997. Comparison of the performance of quantum well and conventional bulk infrared photodetectors. Infrared Phys. and Tech. 38 29.
  • [8].Razeghi, M., Erdtmann, M., Jelen C., Guastavinos, F., Brown G.J., Park, Y.S., 2001. Development of quantum well infrared photodetectors at the Center for Quantum Devices. Infrared Phys. and Tech. 42 135.
  • [9].Perera, A. G. U., Shen, W. Z., Matsik, S. G., 1998. GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm. Appl. Phys. Lett. 72, 1596.
  • [10].Levine, B. F., 1993. Quantum‐well infrared photodetectors. Journal of Applied Physics 74, R1.
  • [11].Esaki L., Tsu, R., 1969. Superlattices and Negative Conductivity in Semiconductors, Res. Note, RC-2414.
  • [12].Chang, L.L., Esaki, L., Tsu, R., 1974. Resonant tunneling in semiconductor double barriers. Appl. Phys. Lett. 24, 593.
  • [13].Esaki, L., Sakaki, H., 1977. IBM Technical Disclosure Bulletin, 20, 2456.
  • [14].Chiu, L. C., Smith, J. S., Margalit, S., Yariv, A., 1983. Internal photoemission from quantum well heterojunction superlattices by phononless free‐carrier absorption. Appl. Phys. Lett. 43, 331.
  • [15].Coon, D. D., Karunasiri, R. P. G. 1984. New mode of IR detection using quantum wells. Appl. Phys. Lett. 45, 649.
  • [16].West, C., Eglash, S. J., 1985. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well. Appl. Phys. Lett. 46, 1156.
  • [17].Levine, B. F., Malik, R. J., Walker, J., Choi, K. K., Bethea, C. G., Kleinman, D. A., Vandenberg, J. M. 1987. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices. Appl. Phys. Lett. 50, 273.
  • [18].Choi, K.K, Levine, B.F., Bethea, C.G, 1987. Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain. Phys. Rev. B 35 4172.
  • [19].Vuong, T. H. H., Tsui, D. C., 1989. Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy. Journal of Applied Physics 66, 3688.

Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi

Yıl 2021, Cilt: 5 Sayı: 1, 45 - 48, 28.06.2021
https://doi.org/10.46460/ijiea.915840

Öz

Bu çalışmada, GaAs /AlGaAs çoklu kuantum kuyusunun Akım-Voltaj ölçümlerinin sıcaklığa bağlılığını inceledik. Merkez bölgesinde 10 adet GaAs /Al_0.25 Ga_0.75 As kuantum kuyusu ile n^+-GaAs kontak tabakaları arasında eğimli tabakalardan oluşan örneğimiz, Metal Organik Buhar Fazlı Epitaksi tekniği ile büyütülmüştür. Tünelleme akımının düşük sıcaklıklarda (<85 K) ve yüksek voltajlarda, termal akımın ise yüksek sıcaklıklarda (>125 K) ve düşük voltajlarda etkili olduğu gözlemlendi. Ayrıca, ara sıcaklık bölgesinde (65 K

Kaynakça

  • [1].Rafol, D., Cho, E., Lim, W., 2007. Characterization of very large format 1Kx1K LWIR QWIP focal plane array. Proceedings Volume 6678, Infrared Spaceborne Remote Sensing and Instrumentation XV; 66780X, San Diego, California, United States.
  • [2].Robo, J., Costard, E, Truffer, J., Nedelcu, A., Marcadet, X., Bois, P., 2009. QWIP focal plane arrays performances from MWIR up to VLWIR.
  • [3].Proceedings Volume 7298, Infrared Technology and Applications XXXV; 72980F, San Diego, California, United States.
  • [4].Reibel, Y., Rubaldo, L., Manissadjian, A., Billon-Lanfrey, D., Rothman, J., de Borniol, E., Destéfanis, G., Costard, E., 2012. High-performance MCT and QWIP IR detectors at Sofradir. Electro-Optical and Infrared Systems: Technology and Applications IX. Proceedings of the SPIE, Volume 8541, article id. 85410A, 11., Edinburgh, United Kingdom.
  • [5].Gunapala, SD., Bandara, SV., Liu, JK., Mumolo, JM., Rafol, SB., Ting, DZ., Soibel, A., Hill, C., 2014. IEEE Journal of Selected Topics in Quantum Electronics. 20 (6) :3802312.
  • [6].Martijn, H., Gamfeldt, A., Asplund, C., Smuk, S., Kataria, H., Costard, E., 2016. QWIPs at IR nova, a status update. Proceedings of SPIE. 9819: 981918.
  • [7].Rogalski, A., 1997. Comparison of the performance of quantum well and conventional bulk infrared photodetectors. Infrared Phys. and Tech. 38 29.
  • [8].Razeghi, M., Erdtmann, M., Jelen C., Guastavinos, F., Brown G.J., Park, Y.S., 2001. Development of quantum well infrared photodetectors at the Center for Quantum Devices. Infrared Phys. and Tech. 42 135.
  • [9].Perera, A. G. U., Shen, W. Z., Matsik, S. G., 1998. GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm. Appl. Phys. Lett. 72, 1596.
  • [10].Levine, B. F., 1993. Quantum‐well infrared photodetectors. Journal of Applied Physics 74, R1.
  • [11].Esaki L., Tsu, R., 1969. Superlattices and Negative Conductivity in Semiconductors, Res. Note, RC-2414.
  • [12].Chang, L.L., Esaki, L., Tsu, R., 1974. Resonant tunneling in semiconductor double barriers. Appl. Phys. Lett. 24, 593.
  • [13].Esaki, L., Sakaki, H., 1977. IBM Technical Disclosure Bulletin, 20, 2456.
  • [14].Chiu, L. C., Smith, J. S., Margalit, S., Yariv, A., 1983. Internal photoemission from quantum well heterojunction superlattices by phononless free‐carrier absorption. Appl. Phys. Lett. 43, 331.
  • [15].Coon, D. D., Karunasiri, R. P. G. 1984. New mode of IR detection using quantum wells. Appl. Phys. Lett. 45, 649.
  • [16].West, C., Eglash, S. J., 1985. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well. Appl. Phys. Lett. 46, 1156.
  • [17].Levine, B. F., Malik, R. J., Walker, J., Choi, K. K., Bethea, C. G., Kleinman, D. A., Vandenberg, J. M. 1987. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices. Appl. Phys. Lett. 50, 273.
  • [18].Choi, K.K, Levine, B.F., Bethea, C.G, 1987. Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domain. Phys. Rev. B 35 4172.
  • [19].Vuong, T. H. H., Tsui, D. C., 1989. Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy. Journal of Applied Physics 66, 3688.
Toplam 19 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Konular Mühendislik
Bölüm Makaleler
Yazarlar

Aslan Türkoğlu 0000-0002-4260-6217

Yüksel Ergün 0000-0001-6816-1108

Yayımlanma Tarihi 28 Haziran 2021
Gönderilme Tarihi 14 Nisan 2021
Yayımlandığı Sayı Yıl 2021 Cilt: 5 Sayı: 1

Kaynak Göster

APA Türkoğlu, A., & Ergün, Y. (2021). Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi. International Journal of Innovative Engineering Applications, 5(1), 45-48. https://doi.org/10.46460/ijiea.915840
AMA Türkoğlu A, Ergün Y. Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi. ijiea, IJIEA. Haziran 2021;5(1):45-48. doi:10.46460/ijiea.915840
Chicago Türkoğlu, Aslan, ve Yüksel Ergün. “Metal Organik Buhar Faz Epitaksisi Ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi”. International Journal of Innovative Engineering Applications 5, sy. 1 (Haziran 2021): 45-48. https://doi.org/10.46460/ijiea.915840.
EndNote Türkoğlu A, Ergün Y (01 Haziran 2021) Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi. International Journal of Innovative Engineering Applications 5 1 45–48.
IEEE A. Türkoğlu ve Y. Ergün, “Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi”, ijiea, IJIEA, c. 5, sy. 1, ss. 45–48, 2021, doi: 10.46460/ijiea.915840.
ISNAD Türkoğlu, Aslan - Ergün, Yüksel. “Metal Organik Buhar Faz Epitaksisi Ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi”. International Journal of Innovative Engineering Applications 5/1 (Haziran 2021), 45-48. https://doi.org/10.46460/ijiea.915840.
JAMA Türkoğlu A, Ergün Y. Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi. ijiea, IJIEA. 2021;5:45–48.
MLA Türkoğlu, Aslan ve Yüksel Ergün. “Metal Organik Buhar Faz Epitaksisi Ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi”. International Journal of Innovative Engineering Applications, c. 5, sy. 1, 2021, ss. 45-48, doi:10.46460/ijiea.915840.
Vancouver Türkoğlu A, Ergün Y. Metal Organik Buhar Faz Epitaksisi ile Büyütülen GaAs /AlxGa1−xAs Çoklu Kuantum Kuyularının Akım-Voltaj Ölçümlerinin İncelenmesi. ijiea, IJIEA. 2021;5(1):45-8.