The Effect of Terbium (Tb) Doped İnterface on The Electrical Characteristics of Al /P-Si Schotkky Diodes

Yıl 2021, , 219 - 228, 20.07.2021

Ömer Sevgili

https://doi.org/10.29132/ijpas.854046

Öz

In this study, Terbium doped Cerium Magnesium Aluminate was fabricated using the spin-coating method as a layer between the semiconductor and metal. The electrical properties of the Schottky Diodes with and without the interface were compared using Current-Voltage measurements in the range of (± 2 V). The ideality factor, saturation current, zero bias barrier height and series resistance values of these diodes were calculated using both the Thermionic Emission method and the Norde Function. The experimental results showed that diode with the Terbium-doped Cerium Magnesium Aluminate interface improved compared to the diode without the interface in terms of series resistance, ideality factor and interface states. In addition, the current transmission mechanism at forward bias (V>0) was examined in both diodes and it was seen that both diodes had three linner regions with different slope. Moreover, the energy distribution of the interface states was also examined and it was seen that Schottky Diode with the interface reduced compared to the diode without the interface in terms of the interface states due to the presence of the interface layer used.

Anahtar Kelimeler

The effect of the interface layer, Electric characteristic, Terbium, Cerium magnesium aluminate

Terbiyum (Tb) Katkılı Arayüzeyin Al/p-Si Schotkky Diyotların Elektrik Karakteristikleri Üzerine Etkisi

Öz

Bu çalışmada Terbiyum katkılı Seryum Magnezyum Alüminat, metal ve yarıiletken kristal arasına bir tabaka olarak döner-kaplama yöntemi kullanılarak oluşturuldu. Arayüzeye sahip Schottky Diyotun ve arayüzeysiz Schottky Diyotun elektiksel özellikleri (±2 V) aralığında Akım-Gerilim ölçümleri kullanılarak birbirleriyle karşılaştırıldı. Bu diyotların idealite faktörü, doyma akımı, sıfır beslem engel yüksekliği ve seri direnç değerleri hem Termiyonik Emisyon metodu hem de Norde Fonksiyonu kullanılarak hesaplandı. Deneysel sonuçlar Terbiyum katkılı Seryum Magnezyum Alüminat arayüzeyine sahip diyotun arayüzeysiz diyot ile karşılaştırıldığında seri direnç, idealite faktörü ve arayüzey durumları bakımından iyileştirdiğini gösterdi. Ayrıca her iki diyot içinde doğru beslemdeki (V>0) akım iletim mekanizması incelendi ve bu bölgede iki diyotunda eğimleri birbirlerinden farklı üç lineer bölgeye sahip olduğu görüldü. Dahası arayüzey durumlarının enerji dağılımı da incelendi ve kullanılan arayüzey tabakasının varlığından dolayı arayüzeysiz Schottky Diyotun arayüzey durumlarına göre azalmasını sağladığı görüldü.

Anahtar Kelimeler

Arayüzey tabakasının etkisi, Elektrik karakteristik, Terbiyum, Seryum magnezyum alüminat

Kaynakça

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