BibTex RIS Kaynak Göster
Yıl 2008, Cilt: 8 Sayı: 2, 733 - 738, 02.01.2012

Öz

Kaynakça

  • Oana Y, Kotake H, Mukai N, and Ide K: Eectrical properties of polycrystalline silicon Mosfet’s on glass. J Appl Phys, 22, 493, (1983)
  • T.I.Kamins: Hall mobility in chemically deposited polycrystalline silicon, J.Appl Phys.42, 4357, (1971)
  • N.C.C.Lu, L.Gerzberg, J.D.Meindl, The effect of film thickness on the electrical properties of LPCVD polysilicon films. J Electrochem Soc. 131, 897, (1984)
  • L.Mei, M.River, Y.K.Wark, R.W.Dutton, Grain growth mechanisms in polysilicon, J Electrochem Soc. 129, 1791, (1982)
  • Y.Bourezig, H.Sehil, B.Zebentout, Z.Benamara, F.Raoult, O.Bonnaud, Solid State Phenomena 80-81 (2001)
  • T.I.Kamins,Solid State Electronics ,789(1972)
  • Warner J, Peisl M: exponential band tails in polycrystalline semiconductor films. Phys Rev. 31 6881, (1985)
  • Sze SM: Physics of semiconductor Devices. Wiley edition New York 1981
  • Selberherr S: Analysis and Simulation of Semiconductor Devices. Springer Verlag- Wien 1984
  • Levinson J, Shepherd FR, Scanlon PJ, Westwood WD, Este G, Rider M: Conductivity behavior in polycrystalline semiconductor thin film transistor. J Appl Phys. 53, 1193, (1982)

ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect

Yıl 2008, Cilt: 8 Sayı: 2, 733 - 738, 02.01.2012

Öz

ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect

Kaynakça

  • Oana Y, Kotake H, Mukai N, and Ide K: Eectrical properties of polycrystalline silicon Mosfet’s on glass. J Appl Phys, 22, 493, (1983)
  • T.I.Kamins: Hall mobility in chemically deposited polycrystalline silicon, J.Appl Phys.42, 4357, (1971)
  • N.C.C.Lu, L.Gerzberg, J.D.Meindl, The effect of film thickness on the electrical properties of LPCVD polysilicon films. J Electrochem Soc. 131, 897, (1984)
  • L.Mei, M.River, Y.K.Wark, R.W.Dutton, Grain growth mechanisms in polysilicon, J Electrochem Soc. 129, 1791, (1982)
  • Y.Bourezig, H.Sehil, B.Zebentout, Z.Benamara, F.Raoult, O.Bonnaud, Solid State Phenomena 80-81 (2001)
  • T.I.Kamins,Solid State Electronics ,789(1972)
  • Warner J, Peisl M: exponential band tails in polycrystalline semiconductor films. Phys Rev. 31 6881, (1985)
  • Sze SM: Physics of semiconductor Devices. Wiley edition New York 1981
  • Selberherr S: Analysis and Simulation of Semiconductor Devices. Springer Verlag- Wien 1984
  • Levinson J, Shepherd FR, Scanlon PJ, Westwood WD, Este G, Rider M: Conductivity behavior in polycrystalline semiconductor thin film transistor. J Appl Phys. 53, 1193, (1982)
Toplam 10 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Makaleler
Yazarlar

Y. Bourezıg Bu kişi benim

B. Bouabdallah Bu kişi benim

F. Gaıffot Bu kişi benim

Yayımlanma Tarihi 2 Ocak 2012
Yayımlandığı Sayı Yıl 2008 Cilt: 8 Sayı: 2

Kaynak Göster

APA Bourezıg, Y., Bouabdallah, B., & Gaıffot, F. (2012). ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering, 8(2), 733-738.
AMA Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. Ocak 2012;8(2):733-738.
Chicago Bourezıg, Y., B. Bouabdallah, ve F. Gaıffot. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering 8, sy. 2 (Ocak 2012): 733-38.
EndNote Bourezıg Y, Bouabdallah B, Gaıffot F (01 Ocak 2012) ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering 8 2 733–738.
IEEE Y. Bourezıg, B. Bouabdallah, ve F. Gaıffot, “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect”, IU-Journal of Electrical & Electronics Engineering, c. 8, sy. 2, ss. 733–738, 2012.
ISNAD Bourezıg, Y. vd. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering 8/2 (Ocak 2012), 733-738.
JAMA Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8:733–738.
MLA Bourezıg, Y. vd. “ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of Film Thickness Effect”. IU-Journal of Electrical & Electronics Engineering, c. 8, sy. 2, 2012, ss. 733-8.
Vancouver Bourezıg Y, Bouabdallah B, Gaıffot F. ANALYSIS OF THE RESISTIVITY IN POLYSILICON THIN FILM TRANSISTORS Study of film thickness effect. IU-Journal of Electrical & Electronics Engineering. 2012;8(2):733-8.