Development of Ultra Fast Gate Driver Board for Silicon Carbide MOSFET Applications

Yıl 2025, Cilt: 15 Sayı: 3, 845 - 860, 01.09.2025

Halil Tepedelen , Bilal Eid , Suleyman Adak , Hasan Cangi

https://doi.org/10.21597/jist.1484043

Öz

Silicon Carbide (SiC) is increasingly utilized in high-temperature, high-power applications due to its exceptional properties, including high-temperature resistance, high electrical conductivity, and a wide bandgap. In this study, the development of an ultra-fast gate driver circuit for SiC MOSFETs, designed for AC/DC and DC/AC converter applications, is presented. SiC switching elements are widely preferred in modern power electronics for their capabilities, such as faster switching within a wide bandwidth (50–250 kHz), higher power density, and operation at elevated voltage levels (up to 1,200 V). The high bandgap energy of SiC enables efficient and reliable operation under demanding conditions. This study focuses on designing an optimized gate driver board that minimizes voltage spikes and noise, achieving a voltage overshoot below 10% and noise suppression of up to 15 dB during switching operations. The proposed design is particularly suited for applications in solar inverters and other high-frequency power electronics systems. Simulation and experimental results, including switching rise times under 20 ns and total harmonic distortion (THD) levels below 3%, validate the effectiveness of the proposed gate driver.

Anahtar Kelimeler

SiC MOSFET , PWM inverters Keyword , Solar inverter , Gate Drive Board , Switching device

Destekleyen Kurum

Tübitak

Proje Numarası

119E149

Kaynakça

• Ahmad, A.,Abd Rahim, N., Mubin, X.M., & Eid, B. (2004). New topology three phase multilevel inverter for grid-connected photovoltaic system. In 2014 IEEE 23rd International Symposium on Industrial Electronics (ISIE), (pp. 592-599), June 2014, Turkey.
• Alves, L.E.S.,Lefranc, P., Jeannin, P.O., & Sarrazin, B. (2018). Review on SiC-MOSFET devices and Associated Gate Drivers. In: 2018 IEEE International Conference on Industrial Technology (ICIT), (pp. 824–829), February 2018, France.
• Chen, Y.,Wang, D., & Zhang, J. (2022). Analysis and optimization of SiC MOSFET-based high-frequency inverters. IEEE Transactions on Power Electronics, 37(10), 11234–11245.
• Das, M.K.,Capell, C., David, E., Raju, R., Schutten, M., & Nasadoski, J. (2011). 10 kV, 120 A SiC Half H-bridge Power MOSFET Modules Suitable for High Frequency, Medium Voltage Applications. In: 2011 IEEE Energy Conversion Congress and Exposition, (pp. 2689-2692), 17-22 September, USA.
• Eid, B.M.,Guerrero, J.M., Abusorrah, A.M., & Islam, M.R. (2021). A new voltage regulation strategy using developed power sharing techniques for solar photovoltaic generation-based microgrids. Electrical Engineering, 103, 3023-3031.
• Fuchs, F., &Antonopoulos, S. (2020). Design and implementation of SiC-based inverter systems for photovoltaic applications. IEEE Transactions on Industrial Electronics, 67(8), 7055-7063.
• Gao, S.,Zhang, Y., & Chen, X. (2023). Power density optimization and efficiency improvement of SiC MOSFET-based PV inverters. IEEE Journal of Photovoltaics, 13(1), 189–196.
• Ge, Z.,Li, X., & Wu, Z. (2019). High-performance SiC MOSFET gate driver design for switching applications. IEEE Transactions on Power Electronics, 34(7), 6405-6414.
• Hafeez, H.,Dey, A., & Lobo, T. (2021). Design considerations for high-frequency gate drivers using SiC MOSFETs. IEEE Transactions on Industrial Applications, 57(12), 1280–1289.
• Huang, Z.,Li, H., & Ma, X. (2021). SiC MOSFET gate driver design and application in renewable energy systems. IEEE Transactions on Power Electronics, 36(4), 4190–4198.
• Karimi, F., &Soleimani, M. (2019). Evaluation of SiC MOSFETs in high-power applications. IEEE Transactions on Power Electronics, 34(6), 6175–6183.
• Luo, Y.,Xu, Z., & Wang, J. (2023). SiC MOSFET-based inverters for high-efficiency PV systems. Renewable Energy, 182, 491-500.
• Matsukawa, T.,Chikaraishi, H., Sato, Y., & Shimada, R. (2004). Basic study on conductive characteristics of SiC power device for its application to AC/DC converter. IEEE Trans. Appl. Supercond, 14(2), 690–692.
• Rahman, M.,Ahmed, M., & Nabil, R. (2020). High-speed gate driver design for SiC MOSFETs: Challenges and solutions. IEEE Transactions on Power Electronics, 35(8), 8405-8413.
• Rice, J., &Mookken, J. (2015). SiC MOSFET gate drive design considerations. In: 2015 IEEE International Workshop on Integrated Power Packaging (IWIPP), (pp. 24-27), 03-06 May 2015, USA.
• Saito, A.,Sato, K., Tanimoto, Y., Matsuura, K., Sasaki, Y., Mattausch, M.M., Mattausch, J.H., & Zoka, Y. (2016). Efficiency analysis of SiC MOSFET-based bidirectional isolated DC/DC converters. IEICE Trans. Electron, E99(9), 1065-1070.
• Singh, D.,Sharma, N., & Jha, S. (2022). Design and optimization of PWM inverters for PV systems using SiC MOSFETs. IEEE Journal of Photovoltaics, 12(6), 824–832.
• Tao, Y.,Yu, H., Yin, S., et al. (2023). 3D Calculation of MOSFET Junction Temperature Based on the Finite Volume Method. Iran J Sci Technol Trans Electr Eng, 47(1), 137–146.
• Waleed, M.,Hamanah, M., Salem, A., & Abido, M.A. (2023). Evaluation of advanced wide bandgap Semiconductor-based DC-DC converter for solar power tower tracker application. Alexandria Engineering Journal, 74, 627-641.
• Wang, L.,Zhang, D., & Wang, Y. (2016). High Performance Solid-State Switches using Series-Connected SiC-MOSFETs for High Voltage Applications. In: 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMCECCE), (pp. 1674–1679), 22-26 May 2016, Hefei, Asia.
• Zhang, L.,Chen, S., & Zhang, H. (2022). A review of high-frequency SiC MOSFETs for photovoltaic inverters. IEEE Transactions on Industrial Electronics, 69(5), 5021-5031.
• Zhou, J.,Wang, Y., & Li, Z. (2018). Design and application of SiC MOSFET gate drivers for high-efficiency power conversion systems. IEEE Transactions on Industrial Electronics, 65(10), 7889-7897.