The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Öz

Metal-Insulator-semiconductor contacts (MIS) have been studied its importance in
electronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layer
property and effect of capacitance. For this reason, Si3N4 were deposited with PECVD technique on
p-type Si about 5 nm thickness layers. The thicknesses of Si3N4 were measured with an elipsometre and
obtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact.
Its electrical characterizations were inquired by use of the forward and reverse bias I-V, C–V and G-V
measurements and were seen that the insulator Si
3N4 layer influenced characterizations of the contact.
Effect of the interface states (Nss), the series resistance (Rs) and the other some electrical parameters
were investigated by calculating from I-V and C–V measurements. It was observed that from the C-V
characterizations at 500 kHz dual, contact behaved similarly memristor structure.  

Anahtar Kelimeler

• Al/Si3N4/p-Si,capacitance behavior,metal-insulator-semiconductor structure,Schottky diode

Metal ve Yarıiletken Arasındaki Yalıtkan Tabakanın Elektriksel karakterizasyon Etkisi

Öz

Metal-yalıtkan-yarıiletken (MIS) aygıtlar elektronik ve optoelektronikteki önemlerinden
dolayı çalışılmaktadır. Bu önem aygıtların yüksek dielektrik sabitine, depolama tabakası ve kapasitans
özelliklerine sahip olmalarından kaynaklanmaktadır. Bu yüzden Si3N4 tabakası p-tipi Si üzerine
PECVD tekniği kullanılarak büyütülmüş, kalınlığı elipsometre ile 5 nm olarak ölçülmüştür ve Al
kontak sayesinde MIS yapısı elde edilmiştir. Elde edilen Al/p-Si yapısı üzerine Si3N4 tabakasının etkisi
araştırılmıştır. Bunun için aygıtın elektrik karakterizasyonları ileri ve ters beslem I-V, C–V ve G-V
ölçümleriyle yapılmış ve yalıtkan Si3N4 tabakanın diyot özelliklerini oldukça etkilediği görülmüştür. Ara
yüzey halleri (Nss), seri direnç (Rs) ve diğer bazı elektriksel parametrelerin aygıt üzerine etkileri I-V
ve C–V ölçümlerinden hesaplanarak araştırılmıştır. C-V ölçümlerinden aygıtın memristör bir yapı gibi
davrandığı tespit edilmiştir  

Anahtar Kelimeler

• Al/Si 3N4/p-Si,kapasitör özelliği,metal-yalıtkan-yarıiletken yapılar,Schottky diyot

Kaynakça

1. Ataseven T, Tatatroğlu A, 2013. Temperature-dependent dielectric properties of Au/Si3N4/n-Si (metal insulator semiconductor) structures. Chin. Phys. B, 22(11): 117310-1- 117310-6.
2. Bilkan Ç, Zeyrek S, San SE, Altındal Ş, 2015. A compare of electrical characteristics in Al/p-Si(MS) and Al/C20H12/pSi (MPS) type diodes using current–voltage (I–V) and capacitance–voltage(C–V) measurements. Materials Science in Semiconductor Processing 32: 137–144.
3. Bülbül MM, Zeyrek S, 2006. Frequency dependent capacitance and conductance–voltage characteristics of Al/Si3N4/p-Si(100) MIS diodes. Microelectronic Engineering 83: 2522–2526.
4. Bülbül MM, Zeyrek S, Altındal Ş, Yüzer H, 2006. On the profle of temperature dependent series resistance in Al/Si3N4/pSi (MIS) Schottky diodes. Microelectronic Engineering 83: 577–581.
5. Card HC, Rhoderick EH, 1971. E. H. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D: Appl. Phys 4:1589–1601.
6. Cheung SK, Cheung NW, 1986. Extraction of Schottky diode parameters from forward current‐voltage characteristics. Appl.Phys.Lett. 49 (2): 85-88.
7. Demircioglu Ö, Karataş Ş, Yıldırım N, Bakkaloglu ÖF, Türüt A, 2011. Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si Journal of Alloys and Compounds 509: 6433- 6439.
8. El-Nahass NN, Metwally HS, El-Sayed HEA, Hassanien AM, 2011. Electrical and photovoltaic properties of FeTPPCl/p-Si heterojunction. Synthetic Metals 161: 2253– 2258.

9. Gökçen M, Altuntaş H, Altındal Ş, Özçelik S, 2012. Frequency and voltage dependence of negative capacitance in Au/ SiO2/n-GaAs structures. Materials Science in Semiconductor Processing 15: 41–46.
10. Güllü Ö, Türüt A, 2010. Electrical analysis of organic dye-based MIS Schottky contacts. Microelectronic Engineering 87: 2482-2487.
11. Güllü Ö, Aydoğan Ş, Türüt A, 2012. High barrier Schottky diode with organic interlayer. Solid State Communications 152: 381-385.
12. Karataş Ş, Yildirim N, Türüt A, 2013. Electrical properties and interface state energy distributions of Cr/n-Si Schottky barrier diode. Superlattices and Microstructures 64: 483-494.
13. Korucu D, Duman S, 2015. Frequency and Temperature Dependent Interface States and Series Resistance in Au/SiO2/p-Si (MIS) Diode. Science of advanced materials 7(7): 1291-1297.
14. Lee J, Uhrmann T, Dimopoulos T, Bruckl H, Fidler J, 2010. TEM Study on Diffusion Process of NiFe Schottky and MgO/ NiFe Tunneling Diodes for Spin Injection in Silicon. IEEE Transactions on Magnetics 46(6): 2067-2069.
15. Markvart T, 2000. Solar Electricity, Baffns Lane; John Wiley & Sons, Chichester, England.
16. Nasim F, Bhatt AS, 2013. Influence of different metal over-layers on the electrical behaviour of the MIS Schottky diodes. International Journal of Electronics 100 (9): 1228-1239.
17. Orak I, Toprak M, Türüt A, 2014. Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction. Phys. Scr. 89(115810): 1-5.
18. Orak I, Ejderha K, Türüt A, 2015. The electrical characterizations and illumination response of Co/N-type GaP junction device. Current Applied Physics 15: 1054-1061.
19. Orak I, Ürel M, Bakan G, Dana A, 2015. Memristive behavior in a junctionless flash memory cell. Applied physics letters 106 (233506):1-5.
20. Rajesh KR, Menon CS, 2007. Study on the device characteristics of FePc and FePcCl organic thin flm Schottky diodes: Influence of oxygen and post deposition annealing. Journal of NonCrystalline Solids 353(4): 398-404.
21. Roul B, Mukundan S, Chandan G, Mohan L, Krupanidhi SB, 2015. Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces. AIP Advances 5(037130): 1-12.
22. Sharma GD, Sharma SK, Roy MS, 2004. Photovoltaic properties of Schottky device based on dye sensitized poly (3-phenyl azo methine thiophene) thin flm. Thin Solid Films 468(1–2): 208- 215
23. Sharma SC, Tewari A, 2011. Field emission of electrons from spherical conducting carbon nanotube tip including the effect of image force. Canadian Journal of Physics 89(8): 875-881.
24. Sönmezoğlu S, Akın S, 2011. The Determination of Series Resistance Parameter of Sb‐Doped TiO2/n‐Si MIS Structure by Capacitance‐Voltage (C‐V) Method. AKU‐J. Sci. 11(011101): 1‐8
25. Sze SM, Kwok KN, 2006. Physics of Semiconductor Devices, John Wiley & Sons,Inc, Third edition New Jersey, USA. 832 p.
26. Sze SM, 1981. Physics of Semiconductor Devices, second Ed. Willey & Sons, NewYork, USA. 815 p.
27. Sztkowski J and Sieranski K, 1992. Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode. Solid State Electron. 35(7): 1013-1015.
28. Tatar B, Bulgurcuoglu AE, Gokdemir P, Aydogan P, Yılmazer S, Ozdemir O, Kutlu K, 2009. Electrical and photovoltaic properties of Cr/Si Schottky diodesInt. J. Hydrogen Energy 34: 5208- 5212.
29. Turut A, Karabulut A, Ejderha K, Bıyıklı N, 2015. Capacitance– conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures. Materials Science in Semiconductor Processing 39: 400–407.
30. Yahia IS, Farag AAM, Yakuphanoğlu F, Farooq WA 2011. Temperature dependence of electronic parameters of organic Schottky diode based on fluorescein sodium salt. Synthetic Metals 161 (9-10): 881-887.
31. Zeyrek S, Altındal Ş, Yüzer H, Bülbül MM, 2006. Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures. Applied Surface Science 252: 2999–3010.