A Study of the Effect of DC Conditions on a 5.8 GHz Power Amplifier’s S-Parameters

Yıl 2019, , 195 - 202, 01.03.2019

Bilge Şenel , Mesud Kahriman

https://doi.org/10.21597/jist.441124

Öz

This study investigates changes of S-parameters (S₂₁, S₁₁, S₂₂, S₁₂) of a SBB5089Z power amplifier module in relation to changing DC conditions. Behaviour of those linear performance parameters (S₂₁, S₁₁, S₂₂, S₁₂) was examined graphically. S-parameters of SBB5089Z were analysed covering the 5.8 GHz WiMAX frequency from 5.7 GHz to 5.9 GHz with 200 MHz bandwidth. DC conditions were controlled using a microcontroller, an R/2R Digital Analogue Converter (DAC) ladder circuit and a voltage follower with LM324. The R/2R ladder circuit and voltage follower with LM324 have been integrated with the microcontroller. Also ACS712 current sensor and ADS1115 16-bit Analog Digital Convertor (ADC) are integrated to the microcontroller. PA’s current was read with microcontroller.

Anahtar Kelimeler

Power Amplifier, WiMAX, DC conditions, 5.8 GHz, microcontroller

Besleme Koşullarının 5.8 GHz Güç Yükselteci S-Parametreleri Etkisi Üzerine Bir Çalışma

Öz

Bu çalışma, değişen DC koşullara bağlı olarak SBB5089Z güç yükselteç modülü S-parametrelerindeki (S₂₁, S₁₁, S₂₂, S₁₂) değişimleri araştırmaktadır. Doğrusal performans parametrelerinin (S₂₁, S₁₁, S₂₂, S₁₂) davranışı grafiksel olarak incelenmiştir. SBB5089Z' nin S-parametreleri, 5.8 GHz WiMAX frekansını kapsayan, 5.7 GHz'den 5.9 GHz'e kadar 200MHz bant genişliği ile analiz edilmiştir. DC koşullar, bir mikrodenetleyici, bir R/2R sayısal analog dönüştürücü merdiven devresi ve LM324’lü bir gerilim izleyici kullanılarak kontrol edilmiştir. R/2R merdiven devresi ve LM324’lü gerilim izleyici devresi mikrodenetleyici ile entegre edilmiştir. Aynı zamanda, mikrodenetleyiciye ACS712 akım sensörü ve ADS1115 16-bit analog sayısal dönüştürücü de entegre edilmiştir. Güç yükselteci akımı mikrodenetleyici ile ölçülmüştür.

Anahtar Kelimeler

Güç Yükselteci, WiMAX, 5.8 GHz, DC koşullar, Mikrodenetleyici

Kaynakça

• Akbarpour M, Ghannouchi FM, Helaoui M, 2017. Current-Biasing of Power-Amplifier Transistors and Its Application for Ultra-Wideband High Efficiency at Power Back-Off. IEEE Transactions on Microwave Theory and Techniques 65 (4): 1257-1271.
• Auer F, Schiller S, Kamper M, 2016. Linearity and efficiency improvement using envelope tracking power amplifier. German Microwave Conference (GeMiC), 14-16 March 2016, pp: 88-91.
• Brinkhoff J, Parker AE, Leung M, 2003. Baseband impedance and linearization of FET circuits IEEE Transactions on Microwave Theory and Techniques, 51 (12): 2523-2530
• Chen C-Q, Hao, M.-L., Li, Z.-Q., Du, Z. and Yang H., 2016. A 1.8-2.8 GHz highly linear broadband power amplifier for LTE-A application. Progress In Electromagnetics Research C, 66:47-54.
• Cohen N, Whitney J, Ryan D, Reece M. An adaptive power amplifier and control subsytem for use in space-based software defined radio applications. Asilomar Conference on Signals, Systems and Computers, 3-6 Nov. 2013,pp: 489-491.
• Kaya A, Coskun Ö, Ardıç S. B., 2008. 2.4 GHz (WLAN) İçin A-Sınıfı Güç YükselticiTasarımı. Endüstri & Otomasyon Elektrik,Elektronik, Makina, Bilgisayar ve Kontrol Sistemleri Dergisi, 139: 22-25.
• Cripps S, C, 2002. Advanced Techniques in RF Power Amplifier Design. Artech House, pp:1-31, Boston, London.
• Gecan D, Gjertsen KM, Olavsbråten M, 2017. Novel Metric Describing Total Nonlinearity of Power Amplifier With a Corresponding Figure of Merit for Linearity Evaluation and Optimization. IEEE Microwave and Wireless Components Letters 27 (1): 85-87.
• Gecan D, Olavsbråten M, Gjertsen KM, 2016. Measured linearity improvement of 10W GaN HEMT PA with dynamic gate biasing technique for flat transfer phase. IEEE MTT-S International Microwave Symposium (IMS), 22-27 May 2016 2016, pp 1-4.
• Harzheim T, Heuermann H, Marso M, 2016. An adaptive biasing method for SRD comb generators. German Microwave Conference (GeMiC), 14-16 March 2016, pp 289-292.
• Jing Y, Bakkaloglu B, 2017. A High Slew-Rate Adaptive Biasing Hybrid Envelope Tracking Supply Modulator for LTE Applications. IEEE Transactions on Microwave Theory and Techniques 65 (9): 3245-3256.
• Lee H, Kwon J, Lim W, Lee W, Kang H, Hwang K. C, Lee K. Y, Park C. S, Yang Y, 2017. Optimized Current of the Peaking Amplifier for Two-Stage Doherty Power Amplifier. IEEE Transactions on Microwave Theory and Techniques 65 (1): 209-217.
• Lee M. W, Kam S. H, Lee Y. S, Jeong, Y. H, 2010. A Highly Efficient Three-Stage Doherty Power Amplifier with Flat Gain for WCDMA Applications. Journal of Electromagnetic Waves and Applications. 24 (17-18): 2537-2545.
• Olavsbråten M, Gecan D, 2017. Bandwidth Reduction for Supply Modulated RF PAs Using Power Envelope Tracking. IEEE Microwave and Wireless Components Letters. 27 (4): 374-376.
• Pedro J, C, and Carvalho N, B, 2003. Intermodulation Distortion in Microwave and Wireless Circuits, Artech House, pp: 312-315, Boston, London.
• Pozar, D, 2012. Microwave Engineering. Third Edition, Wiley, pp:600, United States of America.
• Saad P, 2006. Design a Highly Linear Power Amplifier Based on HBT. Master’s Thesis, Electronics/Telecommunication, 80, Gävle., University of Gävle Department of Technology.
• Şenel, B., M. Kahriman, Şenel F. A, 2017. Besleme ve RF Giriş Gücü Şartlarının WiMax Güç Yükselteci Performans Parametrelerine Olan Etkisinin İncelenmesi. Süleyman Demirel Üniversitesi Mühendislik Bilimleri ve Tasarım Dergisi 5 (3).
• Tafuri FF, Sira D, Jensen OK, Larsen T, 2013. Efficiency enhancement of an envelope tracking power amplifier combining supply shaping and dynamic biasing. European Microwave Conference, 6-10 Oct. 2013, pp:1491-1494.
• Tripathi G. C, Rawat M, Kamath S, Kartikeyan M. V, 2017. Linearization of traveling-wave tube amplifiers using digitally supported signal injection technique. Journal of Electromagnetic Waves and Applications, 31 (17): 1802-1815.
• Wong S. K, Ooi, C. P, Pang W. L, Chan, K. Y, 2012. A High Gain and High Efficiency Cmos Driver Amplifier for 3.5 Ghz WiMAX Applications. Journal of Electromagnetic Waves and Applications, 26 (4): 512-524.