Araştırma Makalesi

Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications

Cilt: 9 Sayı: 3 1 Eylül 2019
  • Sinan Bayındır
  • Mehmet Akif Şahinkaya
  • İkram Orak *
PDF İndir
TR EN

Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications

Öz

In the present study, organic materials Bis(TSC)-Ph and novel Bis(Rh)-Ph were synthesized and used such as interfacial layer for diode applications. Al/ Bis(TSC)-Ph/p type Si and Al/ Bis(Rh)-Ph/p type Si Schottky diodes were fabricated with spin coating and thermal evaporation methods. The electrical parameters were investigated by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at various frequencies from 30 kHz to 5 Mhz at room temperature. The effect of frequency on device performance was examined and compared with each other. The some basically parameters such as acceptor concentration (Na), interface states (Nss), Fermi level (Ef) and barrier height (𝛷𝐵) were also calculated from C-2-V measurements. According to these results, as expected, it was determined that Bis(Rh)-Ph organic layer, which is containing the rhodanine group, is more suitable than Bis(TSC)-Ph for C-V and G-V performances.

Anahtar Kelimeler

Kaynakça

  1. Aksoy S, Caglar Y, 2012. Effect of Ambient Temperature on Electrical Properties of Nanostructure N-ZnO / p-Si Heterojunction Diode. Superlattices and Microstructures, 51(5), 613–25.
  2. Bilkan C, Zeyrek S, San SE, Altindal S, 2015. A Compare of Electrical Characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) Type Diodes Using Current-Voltage (I-V) and Capacitance-Voltage (C-V) Measurements, Materials Science in Semiconductor Processing, 32, 137–44.
  3. Cifci OS, Kocyigit A, Sun P, 2018. Perovskite/p-Si Photodiode with Ultra-Thin Metal Cathode. Superlattices and Microstructures, 120, 492–500.
  4. Güclü ÇŞ,Ozdemir AF, Karabulut A, Kökçe A, Altindal Ş, 2019. Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs). Materials Science in Semiconductor Processing, 89,26-31.
  5. Gülcin ED, Yücedag I, Yashar AK, Altındal Ş, 2018. Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures. Journal of Electronic Materials, 47,11.
  6. Kaçus H, Aydoğan Ş, Ekinci D, Kurudirek SV, Türüt A, 2015. Optical Absorption of the Anthracene and Temperature-Dependent Capacitance–voltage Characteristics of the Au/Anthracene/n-Si Heterojunction in Metal–organic-Semiconductor Configuration. Physica E: Low-Dimensional Systems and Nanostructures, 74, 505–09.
  7. Karabulut A, 2019. Barrier height modification in Au/Ti/n-GaAs devices with a HfO2 interfacial layer formed by atomic layer deposition. Bulletin of Materials Science, 42,5.
  8. Karabulut A, Orak I, Canlı S, Yıldırım N, Turut A, 2018.Temperature-Dependent Electrical Characteristics of Alq3/p-Si Heterojunction. Physica B: Condensed Matter, 550, 68–74.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Metroloji,Uygulamalı ve Endüstriyel Fizik

Bölüm

Araştırma Makalesi

Yayımlanma Tarihi

1 Eylül 2019

Gönderilme Tarihi

3 Mart 2019

Kabul Tarihi

8 Nisan 2019

Yayımlandığı Sayı

Yıl 2019 Cilt: 9 Sayı: 3

Kaynak Göster

APA
Bayındır, S., Şahinkaya, M. A., & Orak, İ. (2019). Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Journal of the Institute of Science and Technology, 9(3), 1367-1376. https://doi.org/10.21597/jist.534846
AMA
1.Bayındır S, Şahinkaya MA, Orak İ. Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Iğdır Üniv. Fen Bil Enst. Der. 2019;9(3):1367-1376. doi:10.21597/jist.534846
Chicago
Bayındır, Sinan, Mehmet Akif Şahinkaya, ve İkram Orak. 2019. “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications”. Journal of the Institute of Science and Technology 9 (3): 1367-76. https://doi.org/10.21597/jist.534846.
EndNote
Bayındır S, Şahinkaya MA, Orak İ (01 Eylül 2019) Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Journal of the Institute of Science and Technology 9 3 1367–1376.
IEEE
[1]S. Bayındır, M. A. Şahinkaya, ve İ. Orak, “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications”, Iğdır Üniv. Fen Bil Enst. Der., c. 9, sy 3, ss. 1367–1376, Eyl. 2019, doi: 10.21597/jist.534846.
ISNAD
Bayındır, Sinan - Şahinkaya, Mehmet Akif - Orak, İkram. “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications”. Journal of the Institute of Science and Technology 9/3 (01 Eylül 2019): 1367-1376. https://doi.org/10.21597/jist.534846.
JAMA
1.Bayındır S, Şahinkaya MA, Orak İ. Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Iğdır Üniv. Fen Bil Enst. Der. 2019;9:1367–1376.
MLA
Bayındır, Sinan, vd. “Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications”. Journal of the Institute of Science and Technology, c. 9, sy 3, Eylül 2019, ss. 1367-76, doi:10.21597/jist.534846.
Vancouver
1.Sinan Bayındır, Mehmet Akif Şahinkaya, İkram Orak. Catalyst-Free Synthesis of Thiosemicarbazone and Rhodanine derivatives and Their Schottky Diode Applications. Iğdır Üniv. Fen Bil Enst. Der. 01 Eylül 2019;9(3):1367-76. doi:10.21597/jist.534846

Cited By