Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Öz

In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28.

Anahtar Kelimeler

• Tin sulfide (SnSx),Silicon,diode,sputtering,responsivity

Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Öz

In this study, the SnS₂ thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS₂/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS₂/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm² solar-light source has exhibited 0.24% PCE with J_sc of 1.83 mA/cm², V_oc of 0.46 V and FF of 0.28. 

Anahtar Kelimeler

• Tin sulfide (SnSx),Silicon,diode,sputtering,responsivity

Kaynakça

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