Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Year 2020, , 214 - 224, 01.03.2020

Ali Baltakesmez

https://doi.org/10.21597/jist.642111

Abstract

In this study, the SnS₂ thin film deposited
by spray
pyrolysis technique has been analyzed by XRD, SEM and UV-visible
characterization techniques to investigate of structural, morphological and
optical properties. The thin film has dominant (001)
and (002) crystallographic planes, compact grain-like morphology with uniform and
good coverage surface and 2.42 eV band gap. The Sn/SnS₂/Si/Au-Ge
structure has been characterized by electrical measurement. The diode has
ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias
current temperature-dependent strongly. In addition, the ITO/SnS₂/Si/Au-Ge
structure has been characterized by 1.5 AM solar simulator for determine of
solar light. The diode under 100 mW/cm² solar-light source has
exhibited 0.24% PCE with J_sc
of 1.83 mA/cm², V_oc of 0.46 V and FF of 0.28. 

Keywords

Tin sulfide (SnSx), Silicon, diode, sputtering, responsivity

Thanks

I acknowledge the assistance of Dr. B. Güzeldir (Atatürk University) in preparation of the thin film.

Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Abstract

In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28.

Keywords

Tin sulfide (SnSx), Silicon, diode, sputtering, responsivity

References

• Anitha N, Anitha M, Mohamed J R, Valanarasu S and Amalraj L, 2018, Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films, Journal of Asian Ceramic Societies 6, 2, 121–131.
• Arulanantham A M S, Valanarasu S, Rex Rosario S, Kathalingam A, Shkir Mohd., Ganesh V., I. S. Yahia I G, 2019, Investigation on nebulizer spray coated Nd-doped SnS2 thin films for solar cell window layer application, Journal of Materials Science: Materials in Electronics 30: 13964.
• Baltakesmez A, 2019, Improved barrier parameters and working stability of Au/p-GO/n-lnP/Au–Ge Schottky barrier diode with GO interlayer showing resistive switching effect, Vacuum 168 108825.
• Chalapathi U, Poornaprakash B, Purushotham Reddy B P and Park S-H, 2017, Preparation of SnS2 thin films by conversion of chemically deposited cubic SnS films into SnS2, Thin Solid Films 640, 81–87.
• Chalapathi U, Poornaprakash B, Reddy B P, Park S-H, 2017, Preparation of SnS2 thin films by conversion of chemically deposited cubic SnS films into SnS2, Thin Solid Films 640, 81–87.
• Chen W, Ghosh D and Chen S, 2008, Large-scale electrohemical synthesis of SnO2 nanoparticles, Journal of Materials Science, 43:5291-5299
• Chu D, Pak S W and Kim E K, 2018, Locally Gated SnS2/hBN Thin Film Transistors with a Broadband Photoresponse, Scientific Reports, 8:10585.
• Dong Y, Cai G, Zhang Q, Wang H,Zhe Sun Z, Wang H, Wang Y and Xue S, 2018, Solution-phase deposition of SnS thin films via thermo-reduction of SnS2, Chem. Commun.,54, 1992-1995.
• Fang L, Tao W, Bo S, Sen H, Fang L, Nan M, Fu-Jun X, Peng W and Jian-Quan Y, 2009, The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact, Chinese Physics B, 18(04), 1614-04.
• Hu W, Hien T T, Kim D and Chang H S, 2019, Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS2 Thin Film Fabricated through Atomic Layer Deposition, Nanomaterials 2019, 9, 1083.
• Huanga P-C, Wang H-I, Brahma S, Wang S-C and Huang J-L, 2017, Synthesis and characteristics of layered SnS2 nanostructures via hot injection method, Journal of Crystal Growth 468, 162–168.
• Hudait M K and Krupanidhi S B, 2001, Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures, Physica B Condensed Matter 307(1-4):125-137.
• Janardhan E, Reddy M M, Reddy P V and Reddy M J, 2018, Synthesis of SnO Nanoparticles-A Hydrothermal Approach, World Journal of Nano Science and Engineering, 8:33-37.
• Johny J, Guzman S S, Krishnan B, Avellaneda D A, Shaji S, 2018, Nanostructured SnS2 Thin Films from Laser Ablated Nanocolloids: Structure, Morphology, Optoelectronic and Electrochemical Properties, ChemPhysChem, 19, 2902 – 2914.
• Joshia M P, Khota K V, Ghanwata V B, Kharadea S D, Bagadea C S, Desaia N D, Patila S S and Bhosale P N, 2018, Synthesis of tin sulphide thin film by simple arrested precipitation technique for solar cell application, AIP Conference Proceedings 1989, 020015.
• Ju H, Park D, Kim J, 2019, Conductive polymer based high-performance hybrid thermoelectrics: Polyaniline/tin(II) sulfide nanosheet composites, Polymer 160 24–29.
• Kim J, Kim J, Yoon S, Kang J-Y, Jeon C-W and Jo W, 2018, Single Phase Formation of SnS Competing with SnS2 and Sn2S3 for Photovoltaic Applications: Optoelectronic Characteristics of Thin-Film Surfaces and Interfaces, The Journal of Physical Chemistry C, 122, 6, 3523-3532.
• Kumar G M, Ilanchezhiyan P, Cho H D, Yuldashev S, Jeon H C, Kim D Y and Kang T W, 2019, E_ective Modulation of Optical and Photoelectrical Properties of SnS2 Hexagonal Nanoflakes via Zn Incorporation, Nanomaterials 2019, 9, 924.
• Kumar K D A, Valanarasu S, Tamilnayagam V and Amalraj L, 2017, Structural, morphological and optical properties of SnS2 thin films by nebulized spray pyrolysis technique, J Mater Sci: Mater Electron 28: 14209.
• Kumar P, Jain S C, Kumar V, Chand S and Tandon R P, 2008, Trap filled limit and high current–voltage characteristics of organic diodes withnon-zero Schottky barrier, Journal Of Physics D: Applied Physics 41155108.
• Leng J, Wang Z, Wang J, Wu H-H, Yan G, Li X, Guo H, Yong Liu Y, Zhang Q and Guo Z, 2019, Advances in nanostructures fabricated via spray pyrolysis and their applications in energy storage and conversion, Chem. Soc. Rev., 48, 3015-3072.
• Li B, Xing T, Zhong M, Huang L, Lei N, Zhang J, Li J and Wei Z, 2017, A two-dimensional Fe-doped SnS2 magnetic semiconductor, Nature Communications, 8: 1958.
• Li J, Zhang Y C and Zhang M, 2011, Preparation of SnS2 Thin Films by Chemical Bath Deposition, Materials Science Forum, 663-665, pp. 104-107.
• Orletskyi I G, Solovan M M, Maryanchuk P D, Maistruk E V, Pinna F, Tresso E and Brus VV, 2018, Optical properties of spin-coated SnS2 thin films, Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 106120P (18 January 2018).
• Pipinys P and Lapeika V, 2006, Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling, Journal of Applied Physics 99, 093709.
• Pyeon J J, Baek I-H, Lim W C, Chae K H, Han S H, Lee G Y, Baek S-H, Kim J-S, Choi J-W, Chung T-M, Han J-H, Kang C-Y and Kim S K, 2108, Low-temperature wafer-scale synthesis of two-dimensional SnS2, Nanoscale,10, 17712-17721.
• Reddy P P, Chandra Sekhar M, Prabhakar Vattikuti S V, Suh Y, Park S-H, 2018, Solution-based spin-coated tin sulfide thin films for photovoltaic and supercapacitor applications, Materials Research Bulletin 103 13–18.
• Reddy T S and Kumar M S, 2016, Co-evaporated SnS thin films for visible light protodedector applications, RSC Advances, 6:95680-95692.
• Rhoderick E H and Williams R H, 1988, Metal-Semiconductor Contacts, (Oxford: University Press, 1988)
• Sanchez-Juarez A, Tiburcio-Silver A and Ortiz A, 2005, Fabrication of SnS2/SnS hetero-junction thin film diodes by plasma-enhanced chemical vapor deposition, Thin Solid Films 480–481,452–456.
• Schlaf R, Louder D, Lang O, Pettenkofer C, Jaegermann W, Nebesny K W, Lee A, Parkinson B A and Armstrong N R, 1995, Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single‐crystal layered semiconductors: Reflection high‐energy electron diffraction, low‐energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization, Journal of Vacuum Science & Technology A 13, 1761.
• Seo W, Shin S, Ham G, Lee J, Lee S, Choi H and Jeon H, 2017, Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition, Japanese Journal of Applied Physics 56, 3, 031201.
• Shi C, Chen Z, Shi G, Sun R, Zhan X and Shen X, 2012, Influence of annealing on characteristics of tin disulfide thin films by vacuum thermal evaporation, Thin Solid Films 520, 4898–4901.
• Vijayakumar K, Sanjeeviraja C, Jayachandran M and Amalraj L, 2011, Characterization of Tin disulphide thin films prepared at different substrate temperature using spray pyrolysis technique, J Mater Sci: Mater Electron 22: 929–935.
• Voznyi A, Kosyak V, Onufrijevs P, Grase L, Vecstaudza J, Opanasyuk A, Medvid A, 2016, Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films, Journal of Alloys and Compounds 688, 130-139.
• Voznyi A, Kosyak V, Opanasyuk A, Tirkusova N, Grase L, Medvids A, Mezinskis G, 2016. Structural and electrical properties of SnS2 thin films. Materials Chemistry and Physics 173, 52-61.
• Wang W, Chen G, Cai H, Chen B, Yao L,Yang M, Chen S and Huang Z, 2017, The effects of SnS2 secondary phases on Cu2ZnSnS4 solar cells: a promising mechanical exfoliation method for its removal, Journal of Materials Chemistry A,6, 2995-3004.
• Ye G, Gong Y, Lei S, He Y, Li B, Zhang X, Jin Z, Dong L, Lou J, Vajtai R, Zhou W and Ajayan P M, 2017, Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition, Nano Research, 10(7): 2386–2394.
• Zhou Q, Wu H, Li H, Tang X, Qin Z, Dong D, Lin Y, Lu C, Qiu R, Zheng R, Wang J and Li B, 2019, Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport, IEEE Journal of the Electron Devices Society (7), 662 – 667.