Araştırma Makalesi

Growth and Characterization of TiO2 Thin Films by PLD Technique

Cilt: 11 Sayı: 1 1 Mart 2021
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Growth and Characterization of TiO2 Thin Films by PLD Technique

Öz

In this work, the structural, optical and electronic properties of TiO2 thin films grown on glass substrate by Pulse Laser Deposition (PLD) technique are presented. The stoichiometry and the oxidation degree of films were analyzed by considering the Ti 2p and O 1s core energy levels with high resolution X-Ray Photoelectron spectroscopy (XPS). The structural characteristics of the thin films have been investigated by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) technique. The optical absorption region of growth TiO2 films were analyzed by Photoluminescence spectroscopy (PL) technique. Spin-orbit coupling splitting of Ti 2p states was measured as 5.7 eV. The characterizations promote the existence of the metal and oxygen vacancies at the surface of film. These point defects enhance the hysteretic transport properties of the TiO2 metal oxide.

Anahtar Kelimeler

Kaynakça

  1. Sittig CE, 1998. Charakterisierung der oxidschichten auf titan und titanlegierungen sowie deren reaktionen in kontact mit biologisch relevanten modellösungen. Dissertation ETH Nr. 12657, Zürich.
  2. Bally A, 1999. Electronic properties of nano-crystalline titanium dioxide thin films. Dissertation ETH Nr. 2094, Zürich.
  3. Pulker HK, Paesold G and Ritter E, 1976. Refractive indices of TiO2 films produced by reactive evaporationof various titanium–oxygen phases. Applied Optics 15, 2986-2991.
  4. DeVore JR, 1951. Refractive Indices of Rutile and Sphalerite. Journal of the Optical Society of America.41, 416-419.
  5. Gale E, 2014. TiO2-based memristors and ReRAM: materials, mechanisms and models (a review).Semiconductor Science and Technology. 29, 104004 (10pp).
  6. Ding XZ, Liu XH and He YZ, 1996. Grain size dependence of anatase-to-rutile structural
  7. transformation in gel-derived nanocrystalline titania powders. Journal of Materials Science Letters. 15, 1789–1791.
  8. Jamieson J, Olinger B, 1969. Pressure-temperature studies of anatase, brookite rutile, and TiO2(II): A discussion. American Mineralogist. 54 (9-10): 1477–1481.

Ayrıntılar

Birincil Dil

İngilizce

Konular

Metroloji,Uygulamalı ve Endüstriyel Fizik

Bölüm

Araştırma Makalesi

Yayımlanma Tarihi

1 Mart 2021

Gönderilme Tarihi

18 Eylül 2020

Kabul Tarihi

9 Kasım 2020

Yayımlandığı Sayı

Yıl 2021 Cilt: 11 Sayı: 1

Kaynak Göster

APA
Kazan, S. (2021). Growth and Characterization of TiO2 Thin Films by PLD Technique. Journal of the Institute of Science and Technology, 11(1), 221-226. https://doi.org/10.21597/jist.796916
AMA
1.Kazan S. Growth and Characterization of TiO2 Thin Films by PLD Technique. Iğdır Üniv. Fen Bil Enst. Der. 2021;11(1):221-226. doi:10.21597/jist.796916
Chicago
Kazan, Sinan. 2021. “Growth and Characterization of TiO2 Thin Films by PLD Technique”. Journal of the Institute of Science and Technology 11 (1): 221-26. https://doi.org/10.21597/jist.796916.
EndNote
Kazan S (01 Mart 2021) Growth and Characterization of TiO2 Thin Films by PLD Technique. Journal of the Institute of Science and Technology 11 1 221–226.
IEEE
[1]S. Kazan, “Growth and Characterization of TiO2 Thin Films by PLD Technique”, Iğdır Üniv. Fen Bil Enst. Der., c. 11, sy 1, ss. 221–226, Mar. 2021, doi: 10.21597/jist.796916.
ISNAD
Kazan, Sinan. “Growth and Characterization of TiO2 Thin Films by PLD Technique”. Journal of the Institute of Science and Technology 11/1 (01 Mart 2021): 221-226. https://doi.org/10.21597/jist.796916.
JAMA
1.Kazan S. Growth and Characterization of TiO2 Thin Films by PLD Technique. Iğdır Üniv. Fen Bil Enst. Der. 2021;11:221–226.
MLA
Kazan, Sinan. “Growth and Characterization of TiO2 Thin Films by PLD Technique”. Journal of the Institute of Science and Technology, c. 11, sy 1, Mart 2021, ss. 221-6, doi:10.21597/jist.796916.
Vancouver
1.Sinan Kazan. Growth and Characterization of TiO2 Thin Films by PLD Technique. Iğdır Üniv. Fen Bil Enst. Der. 01 Mart 2021;11(1):221-6. doi:10.21597/jist.796916

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