Investigation of Morphological and Optical Properties of Undoped and Boron Doped InSe Single Crystals Grown by Bridgman Technique

Öz

Morphological and optical absorption properties of undoped, 0.1 at% and 0.5 at% boron doped InSe single crystals grown by Bridgman technique were investigated. Morphological and optical absorption properties of undoped, 0.1 at% and 0.5 at% boron doped InSe single crystals have been investigated by AFM, SEM and UV-Vis spectrophotometer techniques. SEM analysis showed that high quality InSe single crystals with large surface area were grown from the stoichiometric melt. From the analysis of optical absorption spectra showed that the exciton peak in 0.5 at% boron doped InSe single crystal expanded by relative to the undoped and 0.1 at% boron doped InSe single crystals. In addition, it was seen that the intensity of absorption decreased and absorption edge shifted to longer wavelengths as a result of boron doping. Optical absorption measurements showed that both undoped and boron doped InSe single crystals had direct forbidden band energies. Also, energy band gaps in boron doped InSe single crystals decreased with increasing boron concentration relative to the energy band gap of undoped InSe single crystal.

Anahtar Kelimeler

• Bridgman
• undoped and boron doped InSe single crystals
• optical absorption

Bridgman Tekniği ile Büyütülen Saf ve Bor Katkılı InSe Tek Kristallerinin Morfolojik ve Optik Özelliklerinin Araştırılması

Öz

Bridgman tekniği ile büyütülen saf, % 0.1 ve % 0.5 bor katkılı InSe tek kristallerinin morfolojik ve optik soğurma özellikleri araştırıldı. Saf, % 0.1 ve % 0.5 bor katkılı InSe tek kristallerinin morfolojik ve optik soğurma özellikleri AFM, SEM ve UV-Vis spektrofotometre teknikleri ile araştırıldı. SEM analizleri geniş yüzeyli yüksek kalitede InSe tek kristallerinin stokiyometrik eriyikten büyüdüğünü gösterdi. Optik soğurma spektrumlarının analizinden saf ve % 0.1 bor katkılı InSe tek kristallerine oranla % 0.5 bor katkılı InSe tek kristalinin eksiton pikinin genişlediği görüldü. Ayrıca, bor katkısı sonucu soğurma şiddetinin azaldığı ve soğurma kenarının daha uzun dalga boyuna doğru kaydığı görüldü. Optik soğurma ölçümlerinden, hem saf hem de bor katkılı InSe tek kristallerinin direkt yasak enerji bant aralığına sahip olduğu gözlendi. Ayrıca, saf InSe tek kristalinin yasak enerji bant aralığına oranla bor katkılı InSe tek kristallerinin yasak enerji bant aralıklarının katkı oranına bağlı olarak azaldığı görüldü.

Anahtar Kelimeler

• Bridgman
• saf ve bor katkılı InSe tek kristalleri
• optik soğurma

Kaynakça

1. Antonioli G, Bianchi D, Canevari V, Emiliani U, Podini P, 1977. Optical constants of GaSe at the fundamental absorption edge. Physica Status Solidi (b), 81(2): 665-670.
2. Asabe MR, Chate PA, Delekar SD, Garadkar KM, Mulla IS, Hankare PP, 2008. Synthesis and characterization of chemically deposited indium selenide thin films at room temperature. Journal of Physics and Chemistry of Solids, 69: 249-254.
3. Ateş A, 2002. InSe ve InSe:Ho Tek Kristallerinin Büyütülmesi, Sıcaklığa Bağlı Elektriksel ve Optik Özelliklerinin İncelenmesi. Atatürk Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi (Basılmış).
4. Ateş A, Gürbulak B, Yıldırım M, Doğan S, 2003. Electric field influence on absorption measurement in InSe single crystal. Physica E, 16(2): 274-279.
5. Bacıoğlu A, Ertap H, Karabulut M, Mammedov GM, 2014. Sub-bandgap analysis of boron doped InSe single crystals by constant photocurrent method. Optical Materials, 37: 70-73.
6. Bakhtinov AP, Kovalyuk ZD, Sydor ON, Katerinchuk VN, Lytvyn OS, 2007. Formation of nanostructure on the surface of layered InSe semiconductor caused by oxidation under heating. Physics of the Solid State, 49(8): 1572-1578.
7. Balitskii OA, Savchyn VP, Jaeckel B, Jaegermann W, 2004. Surface characterization of In4Se3 single crystals. Physica E, 22: 921-923.
8. Balitskii OA, 2006. Self-organised nanostructures, obtained by oxidation of III-VI compounds. Materials Letters, 60: 594-599.

9. Blasi CDe, Micocci G, Rizzo A, Tepore A, 1982. Large InSe single crystals grown from stoichiometric and non-stoichiometric melts. Journal of Crystal Growth, 57: 482-486.
10. Blasi CDe, Micocci G, Mongelli S, Tepore A, Zuanni F, 1983. Growth and characterization of high quality InSe single crystals. Materials Chemistry and Physics, 9(1-3): 55-64.
11. Blasi C De, Manno D, Mongelli S, 1985. The stacking of polytypes in InSe crystals. Physica Status Solidi (a), 90(1): K5.
12. Blasi CDe, Drigo AV, Micocci G, Tepore A, 1989. Preparation and characterization of In2Se3 crystals. Journal of Crsytal Growth, 94: 455-458.
13. Blasi CDe, Manno D, Rizzo A, 1990. Study of the polytypism in melt grown InSe single crystals by convergent beam electron diffraction. Journal of Crystal Growth, 100: 347-353.
14. Camassel J, Merle P, Mathieu H, Chevy A, 1978. Excitonic absorption edge of indium selenide. Physical Review B, 17(12): 4718-4725.
15. Chevy A, Kuhn A, Martin MS, 1977. Large InSe monocrystals grown from a non-stoichiometric melt. Journal of Crystal Growth, 38: 118-122.
16. Chevy A, Gouskov A, Besson JM, 1978. Growth of crystalline slabs of layered InSe by the Czochralski method. Journal of Crystal Growth, 43: 756-759.
17. Chevy A, 1981. Growth of indium selenides by vapour phase chemical transport; polytypism on indium monoselenide. Journal of Crystal Growth, 51: 157-163.
18. Cingolani A, Cingolani R, Ferrara M, Lugara M, 1985. Excitons and electron-hole plasma in InSe. Solid State Communications, 55(11): 1007-1010.
19. Deniz D, 2004. Growth and Characterization of InSe Single Crystals. Ortadoğu Teknik Üniversitesi Fen Bilimleri Enstitüsü, Yüksek Lisans Tezi (Basılmış).
20. Di Giulio M, Micocci G, Rizzo A, Tepore A, 1983. Photovoltaic effect in gold-indium selenide Schottky barriers. Journal of Applied Physics, 54: 5839-5843.
21. Duman S, 2006. n-InSe ve n-InSe:Sn Tek Kristallerinin Yasak Enerji Aralığına Elektrik Alanın Etkisi ve n-InSe:Sn Yarıiletkeninin Schottky Kontak Davranışı. Atatürk Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi (Basılmış).
22. Emery JY, Brahimotsmane L, Jouanne M, Julien C, Balkanski M, 1989. Growth conditions of InxSey films by molecular beam deposition. Materials Science and Engineering B, 3: 13–17.
23. Ertap H, Mamedov GM, Karabulut M, Bacıoglu A, 2011. Pool-Frenkel thermoelectric modulation of excition photoluminescence in GaSe crystals. Journal of Luminescence, 13: 1376-1379.
24. Ertap H, Bacıoğlu A, Karabulut M, 2015. Photoluminescence properties of boron doped InSe single crystals. Journal of Luminescence, 167: 227-232.
25. Ertap H, Baydar T, Yüksek M, Karabulut M, 2016. Structural and optical properties of gallium sulphide thin film. Turkish Journal of Physics, 40(3): 297-303.
26. Ertap H, 2018. Nonlinear absorption, SHG behavior and carrier dynamics of Nd and Pr doped GaSe single crystals. Optical Materials, 83: 99-103.
27. Ertap H, Karabulut M, 2019. Structural and electrical properties of boron doped InSe single crystals. Materials Research Express, 6(3): 035901.
28. Hirohata A, Moodera JS, Berera GP, 2006. Structural and electrical propereties of InSe polycrystalline films and diode fabrication. Thin Solid Films, 510: 247-250.
29. Ikari T, Shigetomi S, Koga Y, Shigetomi S, 1981. Photoluminescence properties of Zn doped InSe single crystals. Physica Status Solidi (b), 103(1): K81-K83.
30. Gopal S, Viswanathan C, Karunagaran B, Narayandass SK, Mangalaraj D, Yi J, 2005. Preparation and characterization of electrodeposited indium selenide thin films. Crystal Research Technology, 40: 557-562.
31. Gouskov A, Camassel J, Gouskov L, 1982. Growth and characterization of III-VI layered crystals like GaSe, GaTe, InSe, GaSe1-xTex and GaxIn1-xSe. Progress in Crystal Growth and Characterization, 5(4): 323-413.
32. Gürbulak B, Yıldırım M, Abay B, Tüzemen S, Alieva M, Yoğurtçu YK, 1998. Growth and optical properties of Ho doped n-type indium selenide. Physica Status Solidi (a), 168(2): 495-500.
33. Gürbulak B, Yıldırım, M, Ateş A, Doğan S, Yoğurtçu YK, 1999. Growth and temperature dependence of optical properties of Er doped and undoped n-type InSe. Japan Journal of Applied Physics, 38: 5133-5136.
34. Gürbulak B, 1999. Growth and optical properties of Dy doped n-type InSe single crystal. Solid State Communications, 109: 665-669.
35. Gürbulak B, 2004. Urbach tail and optical investigations of Gd doped and undoped InSe single crystals. Physica Scripta, 70(2-3): 197-201.
36. Gürbulak B, Şata M, Dogan S, Duman S, Ashkhasi A, Keskenler EF, 2014. Structural characterizations and optical properties of InSe and InSe:Ag semiconductors grown by Bridgman/Stockbarger technique. Physica E, 64: 106-111.
37. Gürbulak B, Ashkhasi A, Şata M, Özçelik FŞ, Duman S, 2016. Structural characterization of InSe:Zn binary semiconductor grown by Bridgman/Stockbarger technique. International Journal of Thales Natural Sciences, ISSN(print): 2149-5217, 18-28.
38. Khandozhko VA, Kudrynskyi ZR, Kovalyuk ZD, 2014. Influence of low-temperature annealing on the quality of InSe layer single crystals and characteristics of n-InSe-p-InSe heterojunctions. Fizika i Tekhnika Poluprovodnikov, 48(4): 564-569.
39. Kobbi B, Kesri N, 2004. Physico-chemical and electrical properties of InSe thin films. Vacuum, 75(2): 177-182.
40. Lashkarev GV, Slynko VV, Kovalyuk ZD, Sichkovskyi VI, Radchenko MV, Aleshkevych P, Scymczak R, Dobrowolski W, Minikaev R, Zaslonkin AV, 2007. Anomalies of magnetic properties of layered crystals InSe containing Mn. Materials Science and Engineering C, 27: 1052-1055.
41. Likforman A, Carre D, Etienne J, Bachet B, 1975. Crystal structure of indium monoselenide (InSe). Acta Crystallographica B, 31: 1252-1254.
42. Mustafa FI, Gupta S, Goyal N, Tripathi SK, 2010. Effect of indium concertration on the electrical properties of InSe alloy. Physica B, 405: 4087-4091.
43. Olguin D, Canterero A, Ulrich C, Syassen K, 2003. Effect of pressure on structural properties and energy band gaps of γ-InSe. Physica Status Solidi (b), 235(2): 456-463.
44. Parlak M, Erçelebi Ç, Günal I, Salaeva Z, Allakverdiev K, 1995. Growth and characterization of polycrystalline InSe thin films. Thin Solid Films, 258: 86-90.
45. Pathan HM, Kulkarni SS, Mane RS, Lokhande CD, 2005. Preparation and characterization of indium selenide thin films from a chemical route. Materials Chemistry and Physics, 93: 16-20.
46. Rushchanskii KZ, 2004. The influence of hydrostatic pressure on the static and dynamic properties of an InSe crystal: A first-principles study. Physics of the Solid State, 46(1): 179-187.
47. Segura A, Guesdon JP, Besson JM, Chevy A, 1983. Photoconductivity and photovoltaic effect in indium selenide. Journal of Applied Physics, 54: 876-888.
48. Shigetomi S, Ikari T, 2003. Electrical and optical properties of n- and p-InSe doped with Sn and As. Journal of Applied Physics, 93(4): 2301-2303.
49. Siciliano T, Tepore A, Micocci G, Genga A, Siciliano M, Filippo E, 2011. Synthesis and characterization of indium monoselenide (InSe) nanowires. Journal of Materials Science: Materials in Electronics, 22(6): 649-653.
50. Sreekumar R, Kumar PMR, Kartha CS, Vijayakumar KP, Kabiraj D, Khan SA, Avasthi DK, 2006. SHI Induced Single-Phase InSe Formation at Lower Annealing Temperature. Nuclear Instruments and Methods in Physics Research B, 244: 190-193.
51. Uosaki K, Koinuma M, 1993. Atomic imaging of an InSe single-crystal surface with atomic force microscope. Journal of Applied Physics, 74(3): 1675-1678.
52. Viswanathan C, Gopal S, Thamilselvan M, Premnazeer K, Mangalaraj D, Narayandass Sa. K, Yi, J, Ingram DC, 2004. Space charge limited current, variable hopping and mobility gap in thermally evaporated amorphous InSe thin films. Journal of Materials Science: Materials in Electronics, 15: 787-792.
53. Yüksek M, Ertap H, Elmali A, Yaglioglu HG, Mamedov GM, Karabulut M, Özturk MK, 2012. Two photon absorption characteristics of bulk GaTe crystal. Optics and Laser Tecnology, 44: 2178-2181.
54. Zhirko Yu I, Kovalyuk ZD, Pyrlja MM, Boledzyuk VB, 2007. Application of layered InSe and GaSe crystals and powders for solid state hydrogen storage. Hydrogen Materials Science and Chemistry of Carbon Nanomaterials, 325-340.