GEANT4 Simulation of Recoils Production with Proton-Silicon Interactions with 1- 100 MeV Energy

Öz

Radiation flux (proton, neutron, gamma, electron, ion, etc.) on a silicon material can cause mesh damage in the form of a point or cluster. The amount and shape of this damage varies depending on the type and energy of the incoming radiation. The complete description of primary knock-on atoms (PKA’s) produced by the nuclear elastic scattering of the proton with silicon atoms and nuclear recoil atoms generated by their nuclear inelastic interactions is of great importance for quantitative determination of radiation damage in silicon. In this study, nuclear interactions cross sections of protons in the energy range of 1-100 MeV sent on silicon, nuclear recoil atoms and PKA’s were analyzed by using GEANT4 simulation method and the results were compared with the literature.

Anahtar Kelimeler

• GEANT4
• PKA
• silicon
• recoil atom

1-100 MeV Enerjili Proton-Silikon Etkileşmeleri ile Geritepen Üretiminin GEANT4 Benzetişimi

Öz

 Bir silikon malzeme üzerine gelen radyasyon akısı (proton, nötron, gamma, elektron, ion vb.) noktasal veya küme şeklinde bir örgü hasarına sebep olabilmektedir. Bu hasarın miktarı ve biçimi, gelen radyasyonun türüne ve enerjisine bağlı olarak değişir. Protonun, silikon atomlarıyla nükleer esnek saçılması sonucu üretilen birincil çarpışma atomlarının (primary knock on atom, PKA) ve nükleer esnek olmayan etkileşmeleriyle açığa çıkan nükleer geritepen atomların eksiksiz olarak tanımlanması, silikondaki radyasyon hasarının nicel olarak belirlenmesi açısından büyük öneme taşır. Bu çalışmada, silikon üzerine gönderilen 1-100 MeV enerji aralığındaki protonların, nükleer etkileşme tesir kesitleri, nükleer geritepen atomlar ve PKA’lar GEANT4 benzetişim yöntemiyle analiz edilmiş ve sonuçların literatürle karşılaştırmaları yapılmıştır.

Anahtar Kelimeler

• Geant4
• silikon
• geritepen atom
• pka

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