Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode

Öz

The subject of this study is the use of Indigo Carmine (IC) material in Schottky diode application. The p-Si crystal was chosen as the base material for diode fabrication. One surface of the p-Si metal was coated with Al metal by thermal evaporation method. Indigo carmine interface material was coated on the other surface of p-Si by spin coating method. Finally, Cr metal was coated on this material with DC sputtering method. So we obtained refence Cr/p-Si/Al diode and Cr/IC/p-Si/Al heterojunctions diode. When the current-voltage (I-V) measurements of these diodes at room temperature were examined, it was determined that the Indigo Carmine material improved the diode parameters. It was determined from the I-V measurements of the Cr/IC/p-Si/Al diode for different temperatures that the ideality factor (n) decreased and the barrier height (Φb) value increased with the increasing temperature. These changes with temperature have been attributed to the inhomogeneous distribution in the potential barrier. In addition, the change of diode parameters with temperature showed that the diode has a double Gaussian distribution.

Anahtar Kelimeler

• Schottky diode
• Thermionic emission
• Cheung
• Norde
• Current-voltage
• Indigo Carmine

Kaynakça

1. Afandiyeva IM, Demirezen S, Altındal Ş, 2013. Temperature dependence of forward and reverse bias current-voltage characteristics in Al-TiW-PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier. Journal of Alloys and Compounds, 552:423-429.
2. Altan H, Özer M, Ezgin H, 2020. Investigation of electrical parameters of Au/P3HT:PCBM/ n-6H–SiC/Ag Schottky barrier diode with different current conduction models. Superlattices and Microstructures, 146:106658.
3. Balasubramani V, Chandrasekaran J, Nyugen TD, Maruthamuthu S, Marnadu R, Vivek P, Sugarthi S, 2020. Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure. Sensors and Actuators A: Physical, 315:112333.
4. Beştaş AN, Yazıcı S, Aktaş F, Abay B, 2014. Double Gaussian distribution of barrier height for FeCrNiC alloy Schottky contacts on p-Si substrates. Applied Surface Science, 318:280-284.
5. Bobby A, Verma S, Asokan K, Sarun PM, Antony BK, 2013. Phase transition induced double-Gaussian barrier height distribution in Schottky diode. Physica B, 431:6-10.
6. Chand S, Kumar J, 1996. Evidence for the double distribution of barrier heights in Pd2Si/n-Si Schottky diodes from I-V-T measurements. Semiconductor Science and Technology, 11(1):1203-1208.
7. Çaldıran Z, 2019. Fabrication of Schottky barrier diodes with the lithium flüoride interface layer and electrical characterization in a wide temperature range. Journal of Alloys and Compounds, 816:152601.
8. Deniz AR, Çaldıran Z, Metin Ö, Can H, Meral K, Aydoğan Ş, 2014. Schottky diode performance of an Au/Pd/GaAs device fabricated by deposition of monodisperse palladium nanoparticles over a p-type GaAs substrate. Materials Science in Semiconductor Processing, 27:163-169.

9. Ejderha K, Yıldırım N, Abay B, Turut A, 2009. Examination by interfacial layer and inhomogeneous barrier height model of temperature-dependent I-V characteristics in Co/p-InP contacts. Journal of Alloys and Compounds, 484:870-876.
10. Guaraldo TT, Pulcinelli SH, Zanoni MVB, 2011. Influence of particle size on the photoactivity of Ti/TiO2 thin film electrodes, andenhanced photoelectro catalytic degradation of indigo carmine dye. Journal of Photochemistry and Photobiology A:Chemistry, 217:259-266.
11. Güzel T, Çolak AB, 2021. Artificial intelligence approach on predicting current values of polymer interface Schottky diode based on temperature and voltage: An experimental study. Superlattices and Microstructures, 153:106864.
12. Hamdaoui N, Ajjel R, Salem B, Gendry M, 2014. Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current-voltage-temperature measurements. Materials Science in Semiconductor Processing, 26:431-437.
13. Kekes T, Tzia C, 2020. Adsorption of indigo carmine on functional chitosan and β-cyclodextrin/chitosan beads: Equilibrium, kinetics and mechanism studies. Journal of Environmental Management, 262:110372.
14. Lim LW, Aziz F, Muhammad FF, Supangat A, Sulaiman K, 2016. Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode. Synthetic Metals, 221:169-175.
15. Manthrammel MA, Yahia IS, Shkir M, Alfaify S, Zahran HY, Ganesh V, Yakuphanoğlu F, 2019. Novel design and microelectronic analysis of highly stable Au/Indigo/n-Si photodiode for optoelectronic applications, Solid State Sciences, 93:7-12.
16. Metin Ö, Aydoğan Ş, Meral K, 2014. A new route for the synthesis of graphene oxide-Fe3O4 (GO-Fe3O4) nanocomposites and their Schottky diode applications. Journal of Alloys and Compounds, 585:681-688.
17. Norde H, 1979. A modified forward I-V plot for Schottky diodes with high series resistance. Journal of Applied Physics, 7(50):5052.
18. Pramodini S, Poornesh P, 2014. Third-order nonlinear optical response of indigo carmine under 633 nm excitation for nonlinear optical applications. Optics & Laser Technology, 63:114-119.
19. Reddy PRS, Janardhanam V, Shim K-H, Lee S-N, Kumar AA, Reddy VR, Choi CJ, 2020. Temperature dependent Schottky barrier characteristics of Al/n-type SiSchottky barrier diode with Au–Cu phthalocyanine interlayer. Thin Solid Films, 713:138343.
20. Reddy PRS, Janardhanam V, Shim K-H, Reddy VR, Lee S-N, Park S-J, Choi C-J, 2020. Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode. Vacuum, 171:109012.
21. Reddy VR, 2014. Electrical properties and conduction mechanism of an organic-modified Au/NiPc/n-InP Schottky barrier diode. Applied Physics A, 116:1379-1387.
22. Rhoderick EH, Williams RH, 1988. Metal semiconductor contacts. 2nd ed. Oxford University Press.
23. Sağlam M, Güzeldir B, Ateş A, Buğur E, 2013. Temperature dependence of current-voltage characteristics of the Cd/CdS/n-GaAs/In sandwich structure. Journal of Physics and Chemistry of Solids, 74:370-376.
24. Sharma S, Periasamy C, 2014. A study on the electrical characteristic of n-ZnO/p-Si heterojunction diode prepared by vacuum coating technique. Superlattices and Microstructures, 73:12-21.
25. Tung RT, 1991. Electron transport of inhomogeneous Schottky barriers. Applied Physich Letter, 83:2821-2823.
26. Tung RT, 1992. Electron transport at metal-semiconductor interfaces. General Theory Physical Review B, 45:13509.
27. Werner JH, Gütter HH, 1991. Barrier inhomogeneties at Schottky contacts. Journal Applied Physich, 69(3):1522-1532.
28. Zhang X, Zhai J, Yu X, Ding L, Zhang W, 2013. Fabrication and characterization of flexible Ag/ZnO Schottky diodes on polyimide substrates. Thin Solid Films, 548:623-626.