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Geniş Sekturumlu Aydınlatma altında İki Yüzeyli Silikon Güneş Pilinin Difüzyon Kapasitansı ve Aşırı Azınlık Taşıyıcı Yoğunluğu

Yıl 2016, Cilt: 6 Sayı: 3, 69 - 75, 30.09.2016

Öz

Bu çalışmanın amacı, geniş spektrumlu aydınlatma altında iki yüzeyli silikon güneş pilinin
difüzyon kapasitansı ve aşırı azınlık taşıyıcı yoğunluğu teorik çalışmasının sunulmasıdır. Güneş pili aşırı
azınlık taşıyıcısından fotoakım ve fotogerilim yoğunluğu türetilmiştir. Difüzyon kapasitansı hem voltajın
fonksiyonu ile hem de bağlantı yüzeyi rekombinasyon hızı ile ölçülmüştür. Elektrik polarizasyon etkileri
farklı C-V (Difüzyon kapasitansı- Gerilim) grafkleri ile gösterilmiştir. Tüm çalışılan parametreler
için, karakterizasyon voltaj kapasitansının elektrik alan parametreleri üzerindeki etkisi ve kavşak
rekombinasyon hızı boyunca hücrenin operasyon noktasının etkisi gösterilmiştir
  

Kaynakça

  • Alain R, 1997. Photopiles Solaires, Physique des photopiles, Third Edition Lausanne, 148-155 p.
  • Barro F I, Sane M, Zouma B, 2015. On the capacitance of crystalline silicon solar cells in steady state. Turk J Phys, 39:122–7. http:// dx.doi. org/10.3906/z-1408-3.
  • Diao A, Thiam N, Zoungrana M, Ndiaye M, Sahin G and Sissoko G, 2014. Diffusion coeffcient in silicon solar cell with applied magnetic feld and under frequency: Electric equivalent circuits, World Journal of Condensed Matter Physics, 4, 1-9.
  • http://www.scirp.org/journal/ wjcmp, http://dx.doi.org/10.4236/wjcmp.
  • Dieng A, Lemrabott O H, Maiga A S, Diao A and Sissoko G., 2007. Impedance spectroscopy methodapplied to electrical parameters determination onbifacial silicon solar cell under magnetic feld. J. of Sci., 7(3): 48-52.
  • Furlan J and Amon S, 1985. Approximation of the carrier generation rate in illuminated silicon. Solid State Electron, 28, 1241–43.
  • Grove A S, 1967. Physics and Technology of Semiconductor Devices, First Edition, Wiley, New York. 174 p.
  • Ghitani H E and Martinuzzi S, 1989. Influence of dislocations on electrical properties of large grained polycrystalline silicon cells, J. App. Phys. 66: 1717-1726.
  • Hamidou A, Diao A, Séré A D, Moissi A, Thiame M, Barro F I, Sissoko G. Capacitance determination of a Vertical Parallel Junction Solar Cell under Multispectral Illumination in steady state, (IJITEE) Volume-2, Issue-3.
  • Lemrabott Z N, Bako A, Wereme A and Sissoko G, 2012. Determination of the Recombination and Electrical Parameters of Vertical Multijunction Silicon Solar Cell, Res.J. Appl. Sci. Engineering Technol. Maxwell scientifc Organization, 3: 602-611.
  • Mohammad S N, 1987. An alternative method for the performance analysis of silicon solar cells. J. Appl. Phys. 61(2), 767-77.
  • Nam L Q, Rodot M, Nijs J, Ghannam M and Coppye J, 1992. Réponse spectrale de photopiles de haut rendement au silicium multicristallin. J. Phys. III France 2, 1305-1316.
  • Ndiaye E H, Sahin G, Moustapha D, Amary T, Hawa L D, Mor N, Grégoire S, 2015. Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation, Journal of Applied Mathematics and Physics, 3, 1522-1535.
  • Sahin G, Moustapha D, Mohamed A O E M, Moussa I N, Amary T, Grégoire S, 2015. Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination, Journal of Applied Mathematics and Physics, 3, 1536-1543.
  • Sahin G, 2016. Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain, Results in Physics 6, 107–111.
  • Sane M, Sahin G, Barro F I, Maiga A S, 2014. Incidence angle and spectral effects on vertical junction silicon solar cell capacitance. Turk J Phys, 38:221–7. http://dx.doi.org/10.3906/fz-1311-9.

Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination

Yıl 2016, Cilt: 6 Sayı: 3, 69 - 75, 30.09.2016

Öz

The aim of this work is to present a theorical study of a capacitance voltage characterization
of a bifacial silicon solar cell under polychromatic modulated illumination. From the excess minority
carrier’s density in the solar cell, the photocurrent density and the photovoltage are derived. The diffusion
capacitance was measured with both as a function of voltage and the junction surface recombination
velocity. Electric polarization effects are shown through different C-V plots. For all the studied parameters,
we exhibited the effect of electric feld parameters on the capacitance voltage characterization and the
operating point of the cell through the junction recombination velocity.
  

Kaynakça

  • Alain R, 1997. Photopiles Solaires, Physique des photopiles, Third Edition Lausanne, 148-155 p.
  • Barro F I, Sane M, Zouma B, 2015. On the capacitance of crystalline silicon solar cells in steady state. Turk J Phys, 39:122–7. http:// dx.doi. org/10.3906/z-1408-3.
  • Diao A, Thiam N, Zoungrana M, Ndiaye M, Sahin G and Sissoko G, 2014. Diffusion coeffcient in silicon solar cell with applied magnetic feld and under frequency: Electric equivalent circuits, World Journal of Condensed Matter Physics, 4, 1-9.
  • http://www.scirp.org/journal/ wjcmp, http://dx.doi.org/10.4236/wjcmp.
  • Dieng A, Lemrabott O H, Maiga A S, Diao A and Sissoko G., 2007. Impedance spectroscopy methodapplied to electrical parameters determination onbifacial silicon solar cell under magnetic feld. J. of Sci., 7(3): 48-52.
  • Furlan J and Amon S, 1985. Approximation of the carrier generation rate in illuminated silicon. Solid State Electron, 28, 1241–43.
  • Grove A S, 1967. Physics and Technology of Semiconductor Devices, First Edition, Wiley, New York. 174 p.
  • Ghitani H E and Martinuzzi S, 1989. Influence of dislocations on electrical properties of large grained polycrystalline silicon cells, J. App. Phys. 66: 1717-1726.
  • Hamidou A, Diao A, Séré A D, Moissi A, Thiame M, Barro F I, Sissoko G. Capacitance determination of a Vertical Parallel Junction Solar Cell under Multispectral Illumination in steady state, (IJITEE) Volume-2, Issue-3.
  • Lemrabott Z N, Bako A, Wereme A and Sissoko G, 2012. Determination of the Recombination and Electrical Parameters of Vertical Multijunction Silicon Solar Cell, Res.J. Appl. Sci. Engineering Technol. Maxwell scientifc Organization, 3: 602-611.
  • Mohammad S N, 1987. An alternative method for the performance analysis of silicon solar cells. J. Appl. Phys. 61(2), 767-77.
  • Nam L Q, Rodot M, Nijs J, Ghannam M and Coppye J, 1992. Réponse spectrale de photopiles de haut rendement au silicium multicristallin. J. Phys. III France 2, 1305-1316.
  • Ndiaye E H, Sahin G, Moustapha D, Amary T, Hawa L D, Mor N, Grégoire S, 2015. Study of the Intrinsic Recombination Velocity at the Junction of Silicon Solar under Frequency Modulation and Irradiation, Journal of Applied Mathematics and Physics, 3, 1522-1535.
  • Sahin G, Moustapha D, Mohamed A O E M, Moussa I N, Amary T, Grégoire S, 2015. Capacitance of Vertical Parallel Junction Silicon Solar Cell under Monochromatic Modulated Illumination, Journal of Applied Mathematics and Physics, 3, 1536-1543.
  • Sahin G, 2016. Effect of wavelength on the electrical parameters of a vertical parallel junction silicon solar cell illuminated by its rear side in frequency domain, Results in Physics 6, 107–111.
  • Sane M, Sahin G, Barro F I, Maiga A S, 2014. Incidence angle and spectral effects on vertical junction silicon solar cell capacitance. Turk J Phys, 38:221–7. http://dx.doi.org/10.3906/fz-1311-9.
Toplam 16 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Bölüm Elektrik Elektronik Mühendisliği / Electrical Electronic Engineering
Yazarlar

Gökhan Şahin Bu kişi benim

Yayımlanma Tarihi 30 Eylül 2016
Gönderilme Tarihi 15 Mart 2016
Kabul Tarihi 29 Nisan 2016
Yayımlandığı Sayı Yıl 2016 Cilt: 6 Sayı: 3

Kaynak Göster

APA Şahin, G. (2016). Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination. Journal of the Institute of Science and Technology, 6(3), 69-75.
AMA Şahin G. Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination. Iğdır Üniv. Fen Bil Enst. Der. Eylül 2016;6(3):69-75.
Chicago Şahin, Gökhan. “Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination”. Journal of the Institute of Science and Technology 6, sy. 3 (Eylül 2016): 69-75.
EndNote Şahin G (01 Eylül 2016) Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination. Journal of the Institute of Science and Technology 6 3 69–75.
IEEE G. Şahin, “Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination”, Iğdır Üniv. Fen Bil Enst. Der., c. 6, sy. 3, ss. 69–75, 2016.
ISNAD Şahin, Gökhan. “Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination”. Journal of the Institute of Science and Technology 6/3 (Eylül 2016), 69-75.
JAMA Şahin G. Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination. Iğdır Üniv. Fen Bil Enst. Der. 2016;6:69–75.
MLA Şahin, Gökhan. “Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination”. Journal of the Institute of Science and Technology, c. 6, sy. 3, 2016, ss. 69-75.
Vancouver Şahin G. Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination. Iğdır Üniv. Fen Bil Enst. Der. 2016;6(3):69-75.