Investigation of Electrical Characteristics of Yb/p-Si Schottky Diodes

Yıl 2019, Cilt: 9 Sayı: 3, 1385 - 1394, 01.09.2019

Havva Elif Lapa , Ali Kökce Ahmet Faruk Özdemir

https://doi.org/10.21597/jist.537844

Öz

Yb/p-Si Schottky diodes were fabricated by thermal evaporation method. The measurements of current-voltage (I-V) and capacitance-voltage (C-V) of these diodes were carried out at room temperature and dark. The parameters such as ideality factor (n), zero-bias barrier height (Φbo) and series resistance (Rs) of these diodes were obtained by using I-V data whereas some electrical parameters such as Fermi energy level (EF), density of acceptor atoms (NA) and barrier height [Фb(C-V)] were calculated by using C-2-V characteristics. The value of n was calculated as 1.59 while the value of Φbo was determined as 0.75 eV from forward bias I-V characteristic. The values of EF, NA ve Фb(C-V) were obtained as 0.15 eV, 5.27×1015 cm-3 and 0.67 eV from C-2-V characteristic, respectively. Also, the values of n, Фb and Rs were calculated from the functions of Cheung and Norde. According to the findings, Yb/p-Si Schottky diodes have low leakage current, good rectifier rate and high barrier height. These results showed that Yb is an attractive element to obtain high quality Schottky diode.

Anahtar Kelimeler

Metal/semiconductor contacts, Yb/p-Si Schottky diodes, electrical characteristic

Yb/p-Si Schottky Diyotlarının Elektriksel Karakteristiklerinin İncelenmesi

Öz

Yb/p-Si Schottky diyotları termal buharlaştırma yöntemiyle imal edilmiştir. Bu diyotların akım-gerilim (I-V) ve kapasitans-gerilim (C-V) ölçümleri karanlıkta ve oda sıcaklığında alınmıştır. I-V verileri kullanılarak idealite faktörü (n), sıfır-beslem engel yüksekliği (bo) ve seri direnç (Rs) parametreleri hesaplanırken C-2-V karakteristiğinden Fermi enerji seviyesi (EF), alıcı atomların yoğunluğu (NA) ve engel yüksekliği [Фb(C-V)] gibi bazı elektriksel parametreler hesaplanmıştır. Doğru beslem I-V karakteristiklerinden n değeri 1.59 olarak hesaplanırken bo değeri 0.75 eV olarak hesaplanmıştır. C-2-V karakteristiğinden EF, NA ve Фb(C-V) değerleri, sırasıyla, 0.15 eV, 5.27×1015 cm-3 ve 0.67 eV olarak bulunmuştur. Ayrıca, n, Фb ve Rs değerleri Cheung ve Norde fonksiyonlarından da elde edilmiştir. Elde edilen bulgulara göre, Yb/p-Si Schottky diyotlarının düşük sızıntı akımına, iyi bir doğrultma oranına ve yüksek engel yüksekliğine sahip olması, Yb’un kaliteli Schottky diyot elde etmek için cazip bir element olduğunu göstermiştir.

Anahtar Kelimeler

Metal/yarıiletken kontaklar, Yb/p-Si Schottky diyotlar, elektriksel karakteristik

Kaynakça

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