The Investigation of Frequency Dependent Electrical Characteristics Of Au/C20H12/n-Si (MPS) Structure

Yıl 2020, Cilt: 10 Sayı: 1, 179 - 189, 01.03.2020

Seda Bengi

https://doi.org/10.21597/jist.600490

Cited By: 1

Öz

In this study, C20H12 (perylene) thin film interfacial layer was deposited on n-Si using spin coating method. The capacitance-voltage (C-V) and conductance voltage characteristics (G/-V) of Au/C20H12/n-Si (metal/perylen/semiconductor) structure were investigated in the frequency and voltage ranges of 200 kHz-3 MHz and ±6V, respectively. Experimental results show that the main electrical parameters such as the barrier height, series resistance (Rs) and interface states (Nss) were found strongly function of the voltage and frequency. The C-V plots have an anomalous peak and negative capacitance behavior was observed at high frequencies. In addition, voltage-dependent change profiles of the resistance (Ri) and interface states (Nss) were obtained using Nicollian and Brews method and Hill Coleman methods of the these structures using, respectively. The Rs plots give a peak for each frequency and the magnitude of this peak decreases with increasing frequency. The values of Nss also decrease exponentially with increasing frequency. Obtained experimental results were observed to be very effective on the C-V and G/-V of the Rs and Nss values.

Anahtar Kelimeler

Au/C20H12/n-Si MPS structure, Series resistance, Interface states

Au/C20H12/n-Si (MPS) Yapının Elektriksel Özelliklerinin Frekansa Bağlı İncelenmesi

Öz

Bu çalışmada, C20H12 (perilen) ince film tabaka spin kaplama metodu ile n-Si üzerine büyütüldü. Au/C20H12/n-Si (Metal-perilen-yarıiletken) yapının kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/-V) karakteristikleri, oda sıcaklığında, 200kHz-3MHz frekans ve ±6V voltaj aralığında incelendi. Potansiyel engel yüksekliği (B), seri direnç (Rs) ve arayüzey durumları (Nss) gibi temel elektriksel parametrelerin frekansa ve voltaja oldukça bağlı olduğu görüldü. C-V eğrilerinde yüksek frekanslarda negatif kapasitans davranışı gözlendi. Nicollian ve Brews metodu kullanılarak Au/C20H12/n -Si yapının seri direnci (Rs) ve Hill-Coleman metodu kullanılarak da arayüzey durumlarının (Nss) voltaja bağlı değişimi incelendi. Seri direnç değerleri her frekans değeri için bir pik vermekte ve artan frekans ile azalmaktadır. Arayüzey durumları da artan frekans değeri ile eksponansiyel olarak azalmaktadır. Elde edilen deneysel sonuçlar ile hem Rs hem de Nss değerlerinin C-V ve G/-V ölçümleri üzerinde oldukça etkili olduğu gözlendi.

Anahtar Kelimeler

Au/C20H12/n-Si MPS yapı, Seri direnç, Arayüzey durumları

Kaynakça

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