Yıl 2020, Cilt 10 , Sayı 1, Sayfalar 214 - 224 2020-03-01

Electrical characterization and solar light sensitivity of SnS2/n-Si junction
Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Ali BALTAKESMEZ [1]


In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28. 

In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28.

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Birincil Dil en
Konular Fizik, Uygulamalı
Yayımlanma Tarihi Mart-2020
Bölüm Fizik / Physics
Yazarlar

Orcid: 0000-0003-2175-1180
Yazar: Ali BALTAKESMEZ (Sorumlu Yazar)
Kurum: ARDAHAN ÜNİVERSİTESİ
Ülke: Turkey


Teşekkür I acknowledge the assistance of Dr. B. Güzeldir (Atatürk University) in preparation of the thin film.
Tarihler

Başvuru Tarihi : 4 Kasım 2019
Kabul Tarihi : 2 Aralık 2019
Yayımlanma Tarihi : 1 Mart 2020

Bibtex @araştırma makalesi { jist642111, journal = {Journal of the Institute of Science and Technology}, issn = {2146-0574}, eissn = {2536-4618}, address = {}, publisher = {Iğdır Üniversitesi}, year = {2020}, volume = {10}, pages = {214 - 224}, doi = {10.21597/jist.642111}, title = {Electrical characterization and solar light sensitivity of SnS2/n-Si junction}, key = {cite}, author = {BALTAKESMEZ, Ali} }
APA BALTAKESMEZ, A . (2020). Electrical characterization and solar light sensitivity of SnS2/n-Si junction. Journal of the Institute of Science and Technology , 10 (1) , 214-224 . DOI: 10.21597/jist.642111
MLA BALTAKESMEZ, A . "Electrical characterization and solar light sensitivity of SnS2/n-Si junction". Journal of the Institute of Science and Technology 10 (2020 ): 214-224 <https://dergipark.org.tr/tr/pub/jist/issue/52503/642111>
Chicago BALTAKESMEZ, A . "Electrical characterization and solar light sensitivity of SnS2/n-Si junction". Journal of the Institute of Science and Technology 10 (2020 ): 214-224
RIS TY - JOUR T1 - Electrical characterization and solar light sensitivity of SnS2/n-Si junction AU - Ali BALTAKESMEZ Y1 - 2020 PY - 2020 N1 - doi: 10.21597/jist.642111 DO - 10.21597/jist.642111 T2 - Journal of the Institute of Science and Technology JF - Journal JO - JOR SP - 214 EP - 224 VL - 10 IS - 1 SN - 2146-0574-2536-4618 M3 - doi: 10.21597/jist.642111 UR - https://doi.org/10.21597/jist.642111 Y2 - 2019 ER -
EndNote %0 Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Electrical characterization and solar light sensitivity of SnS2/n-Si junction %A Ali BALTAKESMEZ %T Electrical characterization and solar light sensitivity of SnS2/n-Si junction %D 2020 %J Journal of the Institute of Science and Technology %P 2146-0574-2536-4618 %V 10 %N 1 %R doi: 10.21597/jist.642111 %U 10.21597/jist.642111
ISNAD BALTAKESMEZ, Ali . "Electrical characterization and solar light sensitivity of SnS2/n-Si junction". Journal of the Institute of Science and Technology 10 / 1 (Mart 2020): 214-224 . https://doi.org/10.21597/jist.642111
AMA BALTAKESMEZ A . Electrical characterization and solar light sensitivity of SnS2/n-Si junction. Iğdır Üniv. Fen Bil Enst. Der.. 2020; 10(1): 214-224.
Vancouver BALTAKESMEZ A . Electrical characterization and solar light sensitivity of SnS2/n-Si junction. Journal of the Institute of Science and Technology. 2020; 10(1): 224-214.