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Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu

Yıl 2022, Cilt: 12 Sayı: 4, 2129 - 2139, 01.12.2022
https://doi.org/10.21597/jist.1115556

Öz

Bu çalışmada, GaxOyNz yarıiletken materyal LED grubu aydınlatması altında elektrodepozisyon tekniği kullanılarak p-Si (100) üzerine biriktirilmiştir. Galyum Nitrat, Amonyum Nitrat ve deiyonize su karışımı kullanılarak elektrolit çözeltisi hazırlanmıştır. Platin levha ve p-Si sırasıyla anot ve katot olarak kullanılmıştır. GaxOyNz/p-Si aygıt yapısının üretim aşamasından sonra, 20-100 oC aralığında 10 oC adımlarla sıcaklığa bağımlı Akım-Gerilim (I-V) ölçümleri alınarak iki boyutlu arayüzey durum yoğunluğu dağılımı analizi yapılmıştır. Yapılan analizler sonucunda GaxOyNz/p-Si aygıt yapısının doğrultucu diyot özelliği sergilediği görülmüştür.

Destekleyen Kurum

Muğla Sıtkı Koçman Üniversitesi-BAP Koordinatörlüğü

Proje Numarası

14/067

Kaynakça

  • AL-Heuseen K, 2016. Synthesis of GaN Thin film using a low-cost electrochemical deposition technique for hydrogen gas sensing. International Journal of Thin Films Science and Technology, 5(12):1-9.
  • AL-Heuseen K, Hashim M.K, 2011. One-step synthesis of Gan thin films on Si substrate by a convenient electrochemical technique at low temperature for different durations. Journal of Crystal Growth, 324(1):274-277.
  • Altuntaş H, Dönmez İ, Akgün Ç, 2014. Electrical characteristics of b-Ga2O3 thin films grown by peald. Journal of Alloys and Compounds, 593: 190-195.
  • Bhat T. N, Roul B, Rajpalke M. K, Kumar M., Krupanidhi S. B and Sinha N, 2010. Temperature dependent transport behavior of n-Inn nanodot/p-Si heterojunction structures, Appl. Phys. Letters. 97: 202107.
  • Card HC, Rhoderick EH, 1971. Studies of tunnel mos diodes ınterface effects in silicon schottky diodes. Journal of Physics D: Applied Physics, 4: 1589.
  • Cheung SK, Cheung NW, 1986. Extraction of schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49: 85-87.
  • Duc T.T, 2015, Electronic properties of intrinsic defects and impurities in GaN. Linköping University, PhD Thesis.
  • Guo X, Hao N, Guo D, Wu Z, An Y , Chu X, Li L, Li P , Lei M, Tang W, 2019. b-Ga2O3/p-Si Heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity. Journal of Alloys and Compounds, 660: 136-140.
  • Higashiwaki M., Kuramata A, Murakami H, Kumagai Y, 2017. State-of-the-art technologies of Gallium Oxide power devices. Journal of Physics D: Applied Physics, 50-333002.
  • Higashiwaki M., 2022. β-Ga2O3 material properties, growth technologies, and devices: a review. AAPPS Bulletin. 32:3.
  • Iucolano F, Roccaforte F, Giannazzo F and Raineri V, 2007. Barrier inhomogeneity and electrical properties of pt/gan schottky contacts. J. Appl. Physics. 102-113701.
  • Ivanou D, Ivanova Y, Kulak A, Streltsov E, 2012. Photoinduced selective copper electrodeposition on p-si(111). Electrochemistry Communications, 17:38-42.
  • Jing H. X., Abdullah C. A. C., Yusoff M. Z. M., Mahyuddin A., Hassan Z., 2019. Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE). Results in Physics, 12: 1177-1181.
  • Jubu P. R., Yam F. K., Moses A. T., 2020. Deposition of Gallium Oxide nanostructures at low substrate temperature by chemical vapor deposition. ECS Journal of Solid State Science and Technology, 035-006.
  • Kang K, Mitsuhashi T, Kuroda K, Okido M, 2019. Low‑temperature synthesis of GaN film from aqueous solution by electrodeposition. Journal of Applied Electrochemistry, 49:9, 871-881.
  • Kawamura Y.L, Sakka T, Ogata Y.H, 2005. Photoassisted control of Pt electrodeposition on p-type Si. Journal of Electrochemmical Society. 152:10,701-705.
  • Kim M,Jung-Hun S, Singisettic U, Ma Z, 2017. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, b-Ga2O3 and diamond. Journal of Materials Chemistry C, 5: 8338-8354.
  • Kumar M, Roul B, Rajpalke M. K, Bhat T. N, Kalghatgi A. T and Krupanidhi S. B, 2013. Electrical transport studies of mbe grown in GaN/Si ısotype heterojunctions. Curr. Appl. Physics, 13: 26–30.
  • Lahiri A, Borisenko N, Borodin A, Endres F, 2014. Electrodeposition of Gallium in the presence of NH4Cl in an ıonic liquid: hints for GaN formation. The Royal Society of Chemistry, 50: 10438-10440.
  • Liu Z, Li P, Zhi Y, Wang X, Chu X, Tang W, 2018. Review of Gallium Oxide based field-effecttransistors and Schottky barrier diodes. Chinese Physics B, 28:1- 017105.
  • Mochalov L, Logunova A, Vorotyntsev V, 2020. Preparation of Gallium of the special purity for semiconductors and optoelectronics. Separation and Purification Technology, 258(2021)118001.
  • Mohan L, Chandan G, Mukundan S, Roul B and Krupanidhi S. B, 2014. Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures. J. Appl. Physics, 116:234508.
  • Roul B., Kumar M., Rajpalke M. K, Bhat T. N. and Krupanidhi S. B., 2015. Binary Group III-Nitride based heterostructures: band offsets and transport properties. J. Phys. D: Appl. Physics. 48: 423001.
  • Roy R. K, Pal A.K, 2005. Synthesis of Gallium Nitride Films by a novel electrodeposition route. Material Letters, 59: 2204-2209.
  • Saron K.M, Hashim M.R, Ibrahim M, Yahyaoui M and Allam N.K, 2020. Temperature-dependent transport properties of CVD-fabricated n-GaN Nanorods/p-Si heterojunction devices. Royal Society of Chemistry, 10:33526.
  • Saron K.M., Ibrahim M., Hashim M.R., Hemalda T. A. M. T., 2021. Leakage current reduction in n-GaN-Si (100) heterojunction solar cells. Appl. Phys. Lett, 118-023902.
  • Szklarczyk M, Bockris J. O’M, 1984. Photoelectrocatalysis and electrocatalysis on p-Silicon. The Journal of Physical Chemistry, 88:9.
  • Tuan T. T. A, Kuo D. H, Lin K and Li G. Z, 2015. Temperature dependence of electrical characteristics of n-InxGa1-xN/p-Si hetero-junctions made totally by rf magnetron sputtering. Thin Solid Films, 589-182–187.
  • Zhou Y, Wang D, Ahyi C, Tin C-C, Williams J, Park M, Williams N. M, Hanser A and Preble E. A, 2007. Temperature dependent electrical characteristics of bulk GaN Schottky rectifier. J. Appl. Physics, 101- 024506.

Electrical Characterization of the GaxOyNz/p-Si Diode Structure Manufactured by Electrodeposition Method Under Illumination

Yıl 2022, Cilt: 12 Sayı: 4, 2129 - 2139, 01.12.2022
https://doi.org/10.21597/jist.1115556

Öz

In this study, GaxOyNz films were deposited onto p-Si (100) substrates by using electrodeposition technique under illumination. A mixture of gallium nitrate, ammonnium nitrade and distilled water was utilized as electrolyte. Platinum and p-Si were used as anode and cathode, respectively. After the deposition process of GaxOyNz/p-Si structure, temperature dependent Current-Voltage (I-V) measurements were performed and characterized between 20 oC and 100 oC in 10 oC steps to analyses of two dimensional density of interface states of the device. Characteristics show that GaxOyNz/p-Si device structure exhibits rectification behavior.

Proje Numarası

14/067

Kaynakça

  • AL-Heuseen K, 2016. Synthesis of GaN Thin film using a low-cost electrochemical deposition technique for hydrogen gas sensing. International Journal of Thin Films Science and Technology, 5(12):1-9.
  • AL-Heuseen K, Hashim M.K, 2011. One-step synthesis of Gan thin films on Si substrate by a convenient electrochemical technique at low temperature for different durations. Journal of Crystal Growth, 324(1):274-277.
  • Altuntaş H, Dönmez İ, Akgün Ç, 2014. Electrical characteristics of b-Ga2O3 thin films grown by peald. Journal of Alloys and Compounds, 593: 190-195.
  • Bhat T. N, Roul B, Rajpalke M. K, Kumar M., Krupanidhi S. B and Sinha N, 2010. Temperature dependent transport behavior of n-Inn nanodot/p-Si heterojunction structures, Appl. Phys. Letters. 97: 202107.
  • Card HC, Rhoderick EH, 1971. Studies of tunnel mos diodes ınterface effects in silicon schottky diodes. Journal of Physics D: Applied Physics, 4: 1589.
  • Cheung SK, Cheung NW, 1986. Extraction of schottky diode parameters from forward current‐voltage characteristics. Applied Physics Letters, 49: 85-87.
  • Duc T.T, 2015, Electronic properties of intrinsic defects and impurities in GaN. Linköping University, PhD Thesis.
  • Guo X, Hao N, Guo D, Wu Z, An Y , Chu X, Li L, Li P , Lei M, Tang W, 2019. b-Ga2O3/p-Si Heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity. Journal of Alloys and Compounds, 660: 136-140.
  • Higashiwaki M., Kuramata A, Murakami H, Kumagai Y, 2017. State-of-the-art technologies of Gallium Oxide power devices. Journal of Physics D: Applied Physics, 50-333002.
  • Higashiwaki M., 2022. β-Ga2O3 material properties, growth technologies, and devices: a review. AAPPS Bulletin. 32:3.
  • Iucolano F, Roccaforte F, Giannazzo F and Raineri V, 2007. Barrier inhomogeneity and electrical properties of pt/gan schottky contacts. J. Appl. Physics. 102-113701.
  • Ivanou D, Ivanova Y, Kulak A, Streltsov E, 2012. Photoinduced selective copper electrodeposition on p-si(111). Electrochemistry Communications, 17:38-42.
  • Jing H. X., Abdullah C. A. C., Yusoff M. Z. M., Mahyuddin A., Hassan Z., 2019. Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE). Results in Physics, 12: 1177-1181.
  • Jubu P. R., Yam F. K., Moses A. T., 2020. Deposition of Gallium Oxide nanostructures at low substrate temperature by chemical vapor deposition. ECS Journal of Solid State Science and Technology, 035-006.
  • Kang K, Mitsuhashi T, Kuroda K, Okido M, 2019. Low‑temperature synthesis of GaN film from aqueous solution by electrodeposition. Journal of Applied Electrochemistry, 49:9, 871-881.
  • Kawamura Y.L, Sakka T, Ogata Y.H, 2005. Photoassisted control of Pt electrodeposition on p-type Si. Journal of Electrochemmical Society. 152:10,701-705.
  • Kim M,Jung-Hun S, Singisettic U, Ma Z, 2017. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, b-Ga2O3 and diamond. Journal of Materials Chemistry C, 5: 8338-8354.
  • Kumar M, Roul B, Rajpalke M. K, Bhat T. N, Kalghatgi A. T and Krupanidhi S. B, 2013. Electrical transport studies of mbe grown in GaN/Si ısotype heterojunctions. Curr. Appl. Physics, 13: 26–30.
  • Lahiri A, Borisenko N, Borodin A, Endres F, 2014. Electrodeposition of Gallium in the presence of NH4Cl in an ıonic liquid: hints for GaN formation. The Royal Society of Chemistry, 50: 10438-10440.
  • Liu Z, Li P, Zhi Y, Wang X, Chu X, Tang W, 2018. Review of Gallium Oxide based field-effecttransistors and Schottky barrier diodes. Chinese Physics B, 28:1- 017105.
  • Mochalov L, Logunova A, Vorotyntsev V, 2020. Preparation of Gallium of the special purity for semiconductors and optoelectronics. Separation and Purification Technology, 258(2021)118001.
  • Mohan L, Chandan G, Mukundan S, Roul B and Krupanidhi S. B, 2014. Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures. J. Appl. Physics, 116:234508.
  • Roul B., Kumar M., Rajpalke M. K, Bhat T. N. and Krupanidhi S. B., 2015. Binary Group III-Nitride based heterostructures: band offsets and transport properties. J. Phys. D: Appl. Physics. 48: 423001.
  • Roy R. K, Pal A.K, 2005. Synthesis of Gallium Nitride Films by a novel electrodeposition route. Material Letters, 59: 2204-2209.
  • Saron K.M, Hashim M.R, Ibrahim M, Yahyaoui M and Allam N.K, 2020. Temperature-dependent transport properties of CVD-fabricated n-GaN Nanorods/p-Si heterojunction devices. Royal Society of Chemistry, 10:33526.
  • Saron K.M., Ibrahim M., Hashim M.R., Hemalda T. A. M. T., 2021. Leakage current reduction in n-GaN-Si (100) heterojunction solar cells. Appl. Phys. Lett, 118-023902.
  • Szklarczyk M, Bockris J. O’M, 1984. Photoelectrocatalysis and electrocatalysis on p-Silicon. The Journal of Physical Chemistry, 88:9.
  • Tuan T. T. A, Kuo D. H, Lin K and Li G. Z, 2015. Temperature dependence of electrical characteristics of n-InxGa1-xN/p-Si hetero-junctions made totally by rf magnetron sputtering. Thin Solid Films, 589-182–187.
  • Zhou Y, Wang D, Ahyi C, Tin C-C, Williams J, Park M, Williams N. M, Hanser A and Preble E. A, 2007. Temperature dependent electrical characteristics of bulk GaN Schottky rectifier. J. Appl. Physics, 101- 024506.
Toplam 29 adet kaynakça vardır.

Ayrıntılar

Birincil Dil Türkçe
Konular Metroloji,Uygulamalı ve Endüstriyel Fizik
Bölüm Fizik / Physics
Yazarlar

Özcan Birgi 0000-0003-3570-2654

Proje Numarası 14/067
Erken Görünüm Tarihi 25 Kasım 2022
Yayımlanma Tarihi 1 Aralık 2022
Gönderilme Tarihi 14 Mayıs 2022
Kabul Tarihi 30 Ağustos 2022
Yayımlandığı Sayı Yıl 2022 Cilt: 12 Sayı: 4

Kaynak Göster

APA Birgi, Ö. (2022). Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu. Journal of the Institute of Science and Technology, 12(4), 2129-2139. https://doi.org/10.21597/jist.1115556
AMA Birgi Ö. Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu. Iğdır Üniv. Fen Bil Enst. Der. Aralık 2022;12(4):2129-2139. doi:10.21597/jist.1115556
Chicago Birgi, Özcan. “Işık Altında Elektrodepozisyon Yöntemi Ile Üretilmiş GaxOyNz/P-Si Diyot Yapısının Elektriksel Karakterizasyonu”. Journal of the Institute of Science and Technology 12, sy. 4 (Aralık 2022): 2129-39. https://doi.org/10.21597/jist.1115556.
EndNote Birgi Ö (01 Aralık 2022) Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu. Journal of the Institute of Science and Technology 12 4 2129–2139.
IEEE Ö. Birgi, “Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu”, Iğdır Üniv. Fen Bil Enst. Der., c. 12, sy. 4, ss. 2129–2139, 2022, doi: 10.21597/jist.1115556.
ISNAD Birgi, Özcan. “Işık Altında Elektrodepozisyon Yöntemi Ile Üretilmiş GaxOyNz/P-Si Diyot Yapısının Elektriksel Karakterizasyonu”. Journal of the Institute of Science and Technology 12/4 (Aralık 2022), 2129-2139. https://doi.org/10.21597/jist.1115556.
JAMA Birgi Ö. Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu. Iğdır Üniv. Fen Bil Enst. Der. 2022;12:2129–2139.
MLA Birgi, Özcan. “Işık Altında Elektrodepozisyon Yöntemi Ile Üretilmiş GaxOyNz/P-Si Diyot Yapısının Elektriksel Karakterizasyonu”. Journal of the Institute of Science and Technology, c. 12, sy. 4, 2022, ss. 2129-3, doi:10.21597/jist.1115556.
Vancouver Birgi Ö. Işık Altında Elektrodepozisyon Yöntemi ile Üretilmiş GaxOyNz/p-Si Diyot Yapısının Elektriksel Karakterizasyonu. Iğdır Üniv. Fen Bil Enst. Der. 2022;12(4):2129-3.