µc-Si: H Thin Film Materials and Metastability Effects
Öz
Hydrogenated
Microcrystalline Silicon thin film materials (µc-Si:H) are much more preferable
material group than Single Crystalline Silicon (c-Si) and Hydrogenated
Amorphous Silicon (a-Si:H) due to their optoelectronic specification, easy and
cheap production techniques. New application areas of µc-Si:H have been
improved with concurrently production technology improvement. Diode, Sensors,
TFT, Photovoltaic and Heterojunction applications are examples of these
improvements. Depending on these production improvement, high quality µc-Si:H
can be produced. Therefore, these improvements draw attention of scientists
regarding production of high quality electrical materials and their application
areas. However; µc-Si:H materials have electronic metastability problems after
production. Researchers have been working on solving this metastability problem
of µc-Si:H for since 1983. Unfortunately, ultimate solution of metastability
problem for µc-Si:H material has not been revealed until now. Thus, in this
study, µc-Si:H thin films production, crystallographic structure, electronic
structure, optical and electrical specification of µc-Si:H thin film
chronologically have been analyzed through a detailed literature review and
findings have been investigated through the perspective of metastability
problem.
Anahtar Kelimeler
Kaynakça
- Brüggemann, R., & Souffi, N. (2006). Metastable dark and photoconductive properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 352(9-20), 1079–1082. http://doi.org/10.1016/j.jnoncrysol.2005.11.089
- Finger, F., Carius, R., Dylla, T., Klein, S., Okur, S., & Günes, M. (2003). Stability of microcrystalline silicon for thin film solar cell applications. IEE Proceedings - Circuits, Devices and Systems, 150(4), 300. http://doi.org/10.1049/ip-cds:20030636
- Finger, F., Hapke, P., Luysberg, M., Carius, R., Wagner, H., & Scheib, M. (1994). Improvement of grain size and deposition rate of microcrystalline silicon by use of very high frequency glow discharge. Applied Physics Letters, 65(20), 2588. http://doi.org/10.1063/1.112604
- Finger, F., Müller, J., Malten, C., & Wagner, H. (1998). Electronic states in hydrogenated microcrystalline silicon. Philosophical Magazine Part B, 77(3), 805–830. http://doi.org/10.1080/13642819808214836
- Günes, M., Cansever, H., Yilmaz, G., Smirnov, V., Finger, F., & Brüggemann, R. (2012). Metastability effects in hydrogenated microcrystalline silicon thin films investigated by the dual beam photoconductivity method. Journal of Non-Crystalline Solids, 358(17), 2074–2077. http://doi.org/10.1016/j.jnoncrysol.2012.01.063
- Maissel, L. I., and Clang, R., (eds.), Handbook of Thin Film Technology, McGraw-Hill, New York (1970)
- Matsuda, A. (1983). Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma. Journal of Non-Crystalline Solids, 59-60(PART 2), 767–774. http://doi.org/10.1016/0022-3093(83)90284-3
- Matsumura, H. (1991). Formation of Polysilicon Films by Catalytic Chemical Vapor Deposition (cat-CVD) Method. Japanese Journal of Applied Physics, 30(Part 2, No. 8B), L1522–L1524. http://doi.org/10.1143/JJAP.30.L1522
Ayrıntılar
Birincil Dil
Türkçe
Konular
Mühendislik
Bölüm
Derleme
Yazarlar
Gökhan Yılmaz
Türkiye
Yayımlanma Tarihi
29 Mart 2017
Gönderilme Tarihi
10 Ekim 2016
Kabul Tarihi
28 Mart 2017
Yayımlandığı Sayı
Yıl 2017 Cilt: 8 Sayı: 1