Investigating the width effect on energy gaps of electrodes in boron arsenide based nano-transistors, a DFT study

Yıl 2024, , 60 - 64, 15.01.2024

Nilüfer Ertekin

https://doi.org/10.28948/ngumuh.1310492

Öz

This study deals with electronic properties of Boron Arsenide nanoribbons using Density function theory (DFT) calculations. Under specific conditions, nanoribbons can be used as Nano-transistors. It is feasible to modify nanoribbons' electronic properties, such as bandgap and conductivity, by varying their width and edge shape. Source, drain, and gate are basic parts of a conventional field-effect transistor (FET). The channel's conductivity can be changed by applying a voltage to the gate electrode. In current research, Boron Arsenide nanoribbons has been investigated as lead electrode of a transistor and stability of the sheet has been confirmed by positive phonon vibrational modes. Utilizing the band structure spectrum, band gap as an electronic property is measured and reported. Different width values for electrodes have been considered and it has represented that the band gap is size dependent and increasing in ribbon’s size to bulk structure, results in decrements in band gap energy value

Anahtar Kelimeler

Nanotransistor, BAs Nanoribbon, Band gap, armchair edge, Density function theory (DFT)

Bor arsenit bazlı nano-transistörlerde elektrot genişliğinin enerji aralığı üzerindeki etkisinin incelenmesi, bir DFT çalışması

Öz

Bu çalışma, Yoğunluk Fonksiyon Teorisi (DFT) hesaplamalarını kullanarak Boron Arsenit nanoşeritlerin elektronik özellikleri araştırılmıştır. Belirli koşullar altında, nanoşeritler Nano-transistör olarak kullanılmaktadır. Şeritlerin genişliği ve kenar şeklini değiştirerek, nanoşeritlerin bant aralığı ve iletkenliği gibi elektronik özellikleri değiştirilebilir. Source, drain, ve gate, geleneksel bir alan etkili transistörün (FET) temel parçaları olarak tanımlanır. Kanalın iletkenliği, kapı elektroduna bir gerilim uygulayarak değişmektedir. Bu araştırmada Boron Arsenide nanoşeritleri bir transistörün lead elektrotu olarak kullanımı incelenmiştir ve tabakaların kararlılıkları pozitif fonon titreşim modları ile doğrulanmıştır. Band yapısı spektrumu kullanılarak, elektronik özelliği olarak bant aralığı ölçülüp, rapor edilmiştir. Elektrotlar için farklı genişlik değerleri kullanarak bant aralığının boyuta bağlı olduğu ve şeridin boyutunun artmasıyla bant aralığı enerji değerinde azalmaya yol açtığı gösterilmiştir.

Anahtar Kelimeler

Nanotransistör,, BAs nanoribon, Bant aralığı, Armchair kenar, Yoğunluk Fonksiyonu teorisi

Kaynakça

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