DETERMINATION OF DIELECTRIC PROPERTIES OF METAL-OXIDE SEMICONDUCTOR CAPACITOR WITH REDUCED GRAPHENE OXIDE INTERFACIAL OXIDE LAYER

Abstract

   In this study, the frequency dependence of the dielectric properties of Au/RGO/p-Si metal-oxide-semiconductor (MOS) capacitor with silicon nitride (RGO) interfacial oxide layer have been investigated by taking experimental capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at 200, 300, 500 and 700 kHz frequencies. Dielectric constant (ε'), dielectric loss (ε"), dielectric loss tangent (tanδ), ac electrical conductivity (σ_ac), real and imaginary part of electric modulus (Μ' and M") values of the MOS capacitor have been determined in the frequency range of 10 kHz-1 MHz. The obtained results clearly show that the dielectric parameters are frequency dependent. The values of the ε' and ε'' decrease with increasing frequency. But the values of the σ_ac, Μ' and Μ" increase with increasing frequency.

Keywords

• RGO,MOS capacitor,capacitance and conductance measurements,dielectric properties

İNDİRGENMİŞ GRAFEN OKSİT ARAYÜZEY TABAKALI METAL OKSİT YARIİLETKEN KAPASİTÖRÜN DİELEKTRİK ÖZELLİKLERİNİN BELİRLENMESİ

Öz

   Bu çalışmada, İndirgenmiş Grafen Oksit (RGO) arayüzey oksit tabakalı Au/RGO/p-Si metal-oksit-yarıiletken (MOS) kapasitörün dielektrik özelliklerinin frekans bağımlılığı 200, 300, 500 ve 700 kHz frekanslarda deneysel kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/w-V) ölçümleri alınarak incelendi. Ayrıca MOS kapasitörün dielektrik sabiti (ε'), dielektrik kayıp (ε"), dielektrik kayıp açısı (tanδ), ac elektrik iletkenlik (σ_ac), reel ve imajiner elektrik modülü (Μ' ve Μ") değerleri 10 kHz-1 MHz frekans aralığında belirlendi. Elde edilen sonuçlar dielektrik parametrelerin frekansa bağımlı olduğunu açık bir şekilde göstermektedir. ε' ve ε'' artan frekansla azalmaktadır. σ_ac, Μ' ve Μ" değerleri ise artan frekans ile artmaktadır.

Anahtar Kelimeler

• RGO,MOS kapasitör,kapasitans ve iletkenlik ölçümleri,dielektrik özellikler

Kaynakça

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