INVESTIGATION OF THE EFFECT OF N2 GAS FLOW RATE ON THE OPTICAL, STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF INDIUM-GALLIUM-NITRIDE TRIPLE THIN FILMS OBTAINED BY SPUTTER TECHNIQUE
Abstract
In
this research work, InGaN (Indium Gallium Nitride) triple compound was grown
under different N2 gas flow rates by using sputtering technique. The
structural, optical and morphological characteristics of the InGaN compound
have been studied in detail. In the XRD analysis, films exhibited hexagonal
crystal structure. The films appear at lower wavelengths in visible region and
absorption values begin to increase sharply from about 550-560 nm and reach the
highest absorption value in the Near-UV region. When gas flow rates increased,
the optical band gaps of the film increased. In SEM, the film exhibits dense
coverage of the material on the surface of the substrate without the presence
of voids, pinholes or cracks. In the results of the AFM, there are locally
peaks and valleys, and partially homogeneous and circular-like clusters are
arranged. Films are suitable structures for use in device applications.
Keywords
Kaynakça
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Ayrıntılar
Birincil Dil
İngilizce
Konular
Malzeme Üretim Teknolojileri
Bölüm
Araştırma Makalesi
Yayımlanma Tarihi
20 Temmuz 2018
Gönderilme Tarihi
14 Şubat 2018
Kabul Tarihi
14 Mayıs 2018
Yayımlandığı Sayı
Yıl 2018 Cilt: 7 Sayı: 2