DETERMINATION OF DIELECTRIC PROPERTIES OF METAL-OXIDE SEMICONDUCTOR CAPACITOR WITH REDUCED GRAPHENE OXIDE INTERFACIAL OXIDE LAYER

Yıl 2017, Cilt: 6 Sayı: 2, 387 - 393, 31.07.2017

İbrahim Karteri

https://doi.org/10.28948/ngumuh.341185

Cited By: 1

Öz

   In this study, the frequency
dependence of the dielectric properties of Au/RGO/p-Si
metal-oxide-semiconductor (MOS) capacitor with silicon nitride (RGO)
interfacial oxide layer have been investigated by taking experimental
capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at 200, 300, 500 and 700 kHz frequencies. Dielectric constant (ε'), dielectric loss (ε"), dielectric loss tangent (tanδ), ac
electrical conductivity (σ_ac), real and imaginary part
of electric modulus (Μ' and M") values of the MOS capacitor have been
determined in the frequency range of 10 kHz-1 MHz. The obtained results clearly
show that the dielectric parameters are frequency dependent. The values of the
ε' and ε'' decrease with increasing frequency. But the values of the σ_ac,
Μ' and Μ" increase with
increasing frequency.

Anahtar Kelimeler

RGO, MOS capacitor, capacitance and conductance measurements, dielectric properties

İNDİRGENMİŞ GRAFEN OKSİT ARAYÜZEY TABAKALI METAL OKSİT YARIİLETKEN KAPASİTÖRÜN DİELEKTRİK ÖZELLİKLERİNİN BELİRLENMESİ

Öz

   Bu çalışmada, İndirgenmiş Grafen Oksit (RGO)
arayüzey oksit tabakalı Au/RGO/p-Si metal-oksit-yarıiletken (MOS) kapasitörün
dielektrik özelliklerinin frekans bağımlılığı 200, 300, 500 ve 700 kHz
frekanslarda deneysel kapasitans-voltaj (C-V) ve iletkenlik-voltaj (G/w-V)
ölçümleri alınarak incelendi. Ayrıca MOS kapasitörün dielektrik sabiti (ε'), dielektrik
kayıp (ε"),
dielektrik kayıp açısı (tanδ), ac elektrik iletkenlik (σ_ac), reel ve
imajiner elektrik modülü (Μ' ve Μ") değerleri 10 kHz-1 MHz frekans aralığında belirlendi. Elde edilen sonuçlar dielektrik
parametrelerin frekansa bağımlı olduğunu açık bir şekilde göstermektedir. ε' ve
ε'' artan frekansla azalmaktadır. σ_ac, Μ' ve Μ" değerleri ise artan frekans ile artmaktadır.

Anahtar Kelimeler

RGO, MOS kapasitör, kapasitans ve iletkenlik ölçümleri, dielektrik özellikler

Kaynakça

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