GaAs yarıiletken yüzeyinde mikro yarıkların üretilmesi ve FLIM tekniği ile yüzey karakterizasyonu

Yıl 2022, Cilt: 11 Sayı: 3, 826 - 837, 18.07.2022

Sabriye Açıkgöz , Hasan Yungevis

https://doi.org/10.28948/ngumuh.1082122

Öz

Farklı üretim koşulları altında gerçekleştirilen çift hücreli elektrokimyasal aşındırma metodu ile p-tipi Galyum arsenik (GaAs) yarıiletken üzerinde paralel mikro yarıklar başarılı bir şekilde üretilmiştir. Mikro yarıkların yüzey morfolojisini analiz etmek için alan emisyonlu taramalı elektron mikroskobu (SEM) kullanılmıştır. GaAs yüzeyinde derinliği 210 ile 30 nm arasında değişen mikro yarıklar oluştuğu gözlemlenmiştir. Aynı zamanda, mikro yarıkların kimyasal yapısı enerji dağılımlı X-ışını spekroskopisi (EDS) tekniği ile belirlenmiştir. EDS analizi mikro yarıkların yaklaşık olarak 1:1 atomik oranlarda galyum (Ga) ve arsenik (As) elementlerini içerdiğini doğrulamıştır. Mikro yapılı GaAs yüzeyin zaman uyumlu foto ışıma özelliklerini incelenmek için fluoresans yaşam ömrü görüntüleme mikroskopi (FLIM) tekniği uygulanmıştır. 210, 70 ve 30 nm derinliğe sahip olan mikro yarıkların üzerindeki taşıyıcı ömürleri sırasıyla 0.70, 0.37 and 0.25 ns olarak ölçülmüştür. Taşıyıcı rekombinasyon ömrünün, yüzey rekombinasyonlarından dolayı yarıkların derinliğine güçlü bir şekilde duyarlı olduğu sonucuna varılmıştır. Aynı zamanda, GaAs mikro yarıkların yüzey rekombinasyon hızı 42.63 ×10^2 cm⁄s olarak hesaplanmıştır. Üretilen mikro yarıklar optoelektronik aygıt uygulamaları için ilgi çekici görünmektedir.

Anahtar Kelimeler

Galyum arsenik, Elektrokimyasal aşındırma, Mikro yarıklar, FLIM mikroskobu, Taşıyıcı rekombinasyon ömrü haritası

Destekleyen Kurum

TÜBİTAK

Proje Numarası

114F451

Teşekkür

Bu çalışma, Türkiye Bilimsel ve Teknolojik Araştırma Kurumu (TÜBİTAK) tarafından 114F451 numaralı proje ile desteklenmiştir.

Fabrication of the micro grooves on GaAs semiconductor surfaces and surface characterization via FLIM technique

Öz

Paralel micro grooves were successfully fabricated on p-type gallium arsenide (GaAs) substrate by double cell electrochemical etching method under various growth conditions. The field emission scanning electron microscopy (FESEM) was used to analize surface morphology of micro grooves. It is observed that micro grooves with a depth size ranging from 210 to 30 nm are formed on GaAs surface. Moreover, the chemical composition of micro grooves was determined by energy dispersive X-ray spectroscopy (EDS) technique. The EDS analysis confirmed that the prepared grooves were composed dominantly of gallium (Ga) and arsenide (As) with atomic ratio of approximately 1:1. In order to probe time-resolved photoluminescence properties of micro structured GaAs surface, fluorescence lifetime imaging microscopy (FLIM) technique has been employed. The carrier lifetimes on microgrooves with varying dept 210, 70 and 30 nm are measured as 0.70, 0.37 and 0.25 ns, respectively. It has been concluded that the carrier recombination lifetime was strongly sensitive to the depth of grooves due to surface recombinations. Moreover, surface recombination velocity of GaAs micro grooves is calculated as 42.63 ×10^2 cm⁄s. The grown micro grooves seem to be interesting for applications in optoelectronic devices.

Anahtar Kelimeler

Gallium arsenide, Electrochemical etching, Micro grooves, FLIM microscope, Carrier recombination lifetime map

Proje Numarası

114F451

Kaynakça

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