Effect of sulfurization time on the properties of Cu2SnS3 thin films prepared with aqueous solution mixture

Yıl 2025, Cilt: 14 Sayı: 1, 1 - 1

Sevde Erkan , Yavuz Atasoy , Mehmet Ali Olğar , Recep Zan

https://doi.org/10.28948/ngumuh.1549548

Öz

In this study, Cu2SnS3 (CTS) thin films were produced using a simple and environmentally friendly aqueous precursor mixture in a spin coating system. The effects of sulfurization time on the structural, optical, and electrical properties of CTS thin films grown in a rapid thermal annealing furnace using a 2-methoxyethanol-pure water solution were examined in detail. Energy Dispersive X-ray spectroscopy (EDX) revealed that CTS thin films produced at 525°C with holding times of 60 s, 180 s, and 300 s have Cu-rich stoichiometry and crystallize in the monoclinic phase. According to the parameters calculated from X-ray diffraction (XRD) analyses, it was determined that the CTS-180 sample with a crystal size of 35.6 nm has lower dislocation density and microstrain compared to other samples, thus exhibiting higher quality crystallization. Raman analyses support the CTS monoclinic phase and secondary phase formations that emerged in the XRD results. On the other hand, when the surface images of the samples were examined using Scanning Electron Microscopy (SEM), it was determined that the sulfurization time changed the surface morphology of the films. It was observed that with the increase in sulfurization time, homogeneously distributed compact surface images were obtained. Through optical absorption measurements, it was determined that the band gap values of the samples were between 1.01-1.10 eV, which is also attributed to the monoclinic phase of CTS. It was found that the CTS-180 sample had a higher carrier density and lower resistivity compared to the others. According to all characterization results, it was concluded that the CTS-180 sample exhibited suitable structural, morphological, optical, and electrical properties for solar cell applications.

Anahtar Kelimeler

CTS thin film, Spin coating, Sulfurization time, Water-based solution

Proje Numarası

122F217

Sülfürleme süresinin sulu çözelti karışımı ile hazırlanan Cu2SnS3 ince filmlerin özellikleri üzerine etkisi

Öz

Bu çalışmada, basit ve çevre dostu sulu bir öncül karışım kullanılarak Cu2SnS3 (CTS) ince filmleri dönel kaplama sisteminde üretilmiştir. 2- metoksietanol -saf su çözeltisi kullanılarak hızlı tavlama fırınında büyütülen CTS ince filmlerinde sülfürleme süresinin yapısal, optik ve elektrik özellikler üzerine etkileri ayrıntılı bir şekilde incelenmiştir. 525°C’de 60s, 180s ve 300s bekleme sürelerinde üretilen CTS ince filmlerin, Cu-zengini stokiyometriye sahip olduğu ve monoklinik fazda kristalleştiği Enerji Dağılımlı X-ışını spektroskopisi (EDX) ile tespit edilmiştir. X ışını kırınımı (XRD) analizleri ile hesaplanan parametrelere göre, 35.6 nm kristal boyutuna sahip CTS-180 örneğinin diğer numunelere kıyasla daha düşük dislokasyon yoğunluğuna ve mikro gerinime sahip olduğu, dolayısı ile daha yüksek kalitede kristalleştiği tespit edilmiştir. Raman analizleri, XRD sonuçlarında ortaya çıkan CTS monoklinik fazı ve ikincil faz oluşumlarını desteklemektedir. Diğer taraftan, örneklerin Taramalı Elektron Mikroskopisi (SEM) ile yüzey görüntüleri incelendiğinde sülfürleme süresinin filmlerin yüzey morfolojisini değiştirdiği belirlenmiştir. Sülfürleme süresinin artması ile homojen dağılımlı kompakt yüzey görüntülerinin elde edildiği tespit edilmiştir. Yapılan optik soğurma ölçümleri ile örneklerin yasak enerji bant aralığı değerlerinin 1.01-1.10 eV arasında olduğu belirlenmiş, bu değerlerin aynı zamanda CTS’nin monoklinik fazına atfedilmiştir. CTS-180 örneğinin diğerlerine göre daha yüksek taşıyıcı yoğunluğuna ve daha düşük özdirence sahip olduğu belirlenmiş olup, tüm karakterizasyon sonuçlarına göre CTS-180 örneğinin güneş hücre uygulamaları için uygun yapısal, morfolojik optik ve elektrik özellikler sergilediği sonucuna varılmıştır.

Anahtar Kelimeler

CTS ince film, Dönel Kaplama, Sülfürleme süresi, Su bazlı çözelti

Etik Beyan

Yazarlar çıkar çatışması olmadığını beyan etmektedir.

Destekleyen Kurum

Bu çalışma TÜBİTAK Bilim İnsanı Destek Programları Başkanlığı (BİDEB) tarafından yürütülen 122F217 numaralı proje ve “BİÇABA Birlikte Çalışıp Birlikte Başaracağız Burs Programı kapsamında desteklenmiştir

Proje Numarası

122F217

Teşekkür

Bu çalışma TÜBİTAK Bilim İnsanı Destek Programları Başkanlığı (BİDEB) tarafından yürütülen 122F217 numaralı proje ve “BİÇABA Birlikte Çalışıp Birlikte Başaracağız Burs Programı kapsamında desteklenmiştir. Desteklerinden dolayı teşekkür ederim.

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