Si/Sige HETEROJUNCTION BIPOLAR TRANSISTORS (A REVIEW)

Yıl 2000, Cilt: 13 Sayı: 1, 46 - 65, 30.06.2000

Hasan Hüseyin Erkaya

Öz

The research on Sı/SiGe heterojunction bipolar transisfors has led the

ultra-high-speed transıstors tha! are compatible wilh the state-of-the-art silicon

inlegraled technology. The SiGe base regions ofthese transistors are grımn selectivety

on silicon substrates. Self-aligned slructures are used to reduce the external base

resisıance aııd base colleclor parasitic capacitance. The germanium profile in Ihe base

is graded to obtain a drift ejfect to reduce the base-transil tiıne. Si/SiGe integrated

circuils for applications in optical-flber link systems and Si/SiGe microwave pover

Iransistors have been produced wilh remarkable speeds. The SiGe semıconduaor

material system, HBT slructures and fabricalion, and device performance issues are

reviewed in thispaper.

Anahtar Kelimeler

SiGe alloys, heterojuncîion bıpolar transislors.

Kaynakça

• [l] W. Shockiey, U. S. Patent no; 2 569 347, Sep. 1951.
• [2] H. Kroemer, "Thcory ofawıde-gap emitter for traasistors, " Proc. İRE, vol. 45, no. 11, pp. 1535-1537, Nov. 1957.
• [3| S. Brojdo, T. J. Riley, and G. T. Wright, "The heterojunction transistor aııd the space charge-limited triode, " Bril. Appl. I'hys., vol. 16, no. 2, p, 133, Feb. 1965.
• [4] D. J. Pagc, "A CdS-Si heterojunction transistor, " IEEE Trans. Electron Devices, vol. ED-12, no. 9, pp. 509-510, Sep. 1955.
• [5] D. K. Jadus, "The realization of a wide band gap emitter transistor, '' Ph.D, Thesis, Carnegie-Mellon University, Pittsburgh, Pennsylvania, 1957, also, D. K. Jadus and D. L. Feucht, "The realization of a wide baııd gap cmitter transistor," IEEE Trans. Electron Devices, vol. ED-15, no. l, p. 102, Jan. 1959.
• [6] H. J. Hovel and A. G. Milnes, "ZnSe-Ge heterojunction trmsistors, " 1EEE Trans. Eleclron Devices, vol. ED-15, no. 9, p. 755, Sep. 1969.
• [7] K. Sleger, A. G. Milnes, and D. L. Feucht. "ZnSe-GaAs and ZnSe-Ge heterojunction transistors, Proc. im. Conf. Phys. Chem. Semıcond. Heterojunclions Luyer Slructures (Budapest), vol. l, p. 73, 1970, also, K. Sleger, "ZnSe-GaAs Heterojunction Transistors, " Ph.D. Thesis, Camegie-Mellon University, Pittsburgh, Pennsylvania, 1971.
• [8] W. P. Dumke, J.M. Woodall, and V. L. Rideout, "GaAs-GaAIAs heterojunction transistor for high frequency operation, " Solid-State Eiectromcs, vol. 15, no. 10, pp. 1339-1343, Oct. 1972.
• [9| H. Krocmer, "Heterojunction bipolar transistors and integrated circuits, " Proc. IEEE. vol. 70, no. l, pp. 13-25, Jan. 1982.
• [10] L. M. Su, N. Grote, R, K.aumanns, W. Katzschner, and H. G. Bach. "An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5-(im laser diode, " IEEE Electron Device Letl., vol. EDL-6, no." l, pp. 14-17, Jan. 1985
• [l l J N. ^Grote, L. M. Su, and H. -G. Bach, "Characteristics of double-heterojunction InGaAsP/InP bipolar trmsistors, " in Pro c. Symp. OaAs and Related Compounds, pp. 583-588, 1985.
• [12] H. Fukano Y. Kaya, and G. Motosugi, "InGaAsP/InP heterojunction bipolaıtransistor with high cuırent gain, " Jpn. J. Appl. Phys. Part 2, vol. 25, no. 6, pp. L504-L506,. Tünel 986.
• [13] T. E. Zipperian and L. R Dawson, "GaP/Al, Gaı., P heterojunction transistors far high-temperature electronic applications, " ,/ Appl. Phys., vol. 54, no. 10, 6019-6025, Oct. 1983.
• [14] A. Furukawa and T. Baba, "4.2 K operation of a InAIAs/InGaAs heterojunction bipolar transistor, " Jpn. J. Appî. Phys. Part 2, vol. 25, no. 10, pp. L862-L864. Oct. 1985. ' . - - - ^ - ---. rr- ---.. -.,
• t15] G; -L Sulliya n, P. M Asbeck, M. F. Chang, D. L. Miller, and K. C. Wang, AIGaAs /InOaAs /GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy, " Electron. Lett., vol. 22, no. S, pp. 419-421. 10 1986. ' " ^"-"-".. --'.--.-'-.. --..
• [16] M. Ohannam, J. Nijs, R. Mertens, and R. DeKeersmaecker, "A silicon bipolar transistor with a hydrogenated amorphous emitter, " in IEDM Tech. Dil 746-748, 1984. ~ ' ' -'----. -.°"
• ^ ^ K:'..sasakir s' Furukawa. and M. M. Rahmanı, "A novel structure amorphous SİC:H emitter IIBT using low temperature process, " in IEDM Tech. Diz.. 294-297. 1985. ~ ... ------... -.o.,
• [18] T. Sugii, T. Ito, Y. Furumura, M. Doki, F. Mieno, and M. Maeda, "a-SiC/Si heterojunction bipolar transistors with high current gain, " 1EEE Electron Device Letl., vol. EDL-9, no. 2, pp. 87-89, Feb. 1988.
• [19] G. L. Pallon, S. S. iver, S. L. Delage, S. Tiıvari, and J.M. C. Stork, "Silicongermanium- base heterojunction bipolar transistors by molecular beam epitaxy," IEEE Electron Device Lett., vol. EDL-9, no. 4, pp. 165-167, April 1988
• [20] J. F. Gibbons, C. A. King, ]. L. Hoyt, D. B. Noble, C. M. Gronet, M. P. Scott, S. J. Rosner, G. Reid, S. Laderman, K. Nauka, J. Tumer, and T. I. Kamins, "Sİ/Si,. ,Ge, heterojunction bipolar traıısistors fabricated by limited reaction processing," in 1DEM, Tech. Dig., 1988, pp. 566-569.
• [211 C. A. King, J. L. Hoyt, C. M. Gronet, J. F. Gibbons, M. P. Scott, and J. Turner, Si/SiuGe; heterojunction bipolar transislors fabricated by limited reaction processing, " IEEE Electron Device Lell., vol. EDL-10, no. 2, pp. 52-54, Februaıy 1989
• [22] K. Oda, E. Ohue, M. Tanabe, T. Onai, and K. Washio, "130 GIlz/,. SİGe HBT technology, " in 1DIİM, Tech. Dig., 1997, pp. 791-794.
• [23] K. Washio, E. Ohue, K. Oda, M. Tanabe, H. Shimamoto, T. Onai, and M. Kondo, "A sclcctive-epitaxial-growth SİGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay, " IEEE Trans. Electron Devices, V.46, no. 7, pp 1411-1416, JulyI999.
• [24] S. S. lyer, G. L. Pattan, J. M. C. Stork, B. S. Meyerson, and D. L. Harame, "Heterojunction bipolar transistors using Si-Ge alloys, " IEEE Trans. Electron Devices, V. 36, no. 10, pp 2043-2064, Oct 1989.
• [25] B. Pejcinovic, L. E. Kay, T. W. Tang, and D. H, Navon, "Numerical simulation and comparison of Si BJT's and Si,.,Ge, HBT's, " IEEE Truns. Electron Devices, V. 36, no. 10, pp 2129-2137, Oct 1989.
• [26] C. A. King, J. L. Hoyt, and J. F. Gibbons, "Bandgap and transpon properties of Si,,, Ge, by analysis of nearly ideal Si/Sİ,. ıGe. /'Si heterojunction bipolar transistors, " IEEE Trans. Eleclron Devices, V. 36, no. 10, pp 2093-2104, Oct 1989.
• [27] D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe. J. Y.-C. Sim. b. S. Meyerson, and T, Tice, "Sİ/SiGe Epitaxial-base transisıors-Part 11: Process integration and analog applications, " IEEE Trans. ESeclron Devices., vol. 42, no. 3, pp. 469-482, March 1995
• [28] S. Fuhimiko, T. Hashimoto, T. Tatsumi, and T. Tashiro, "Sub-20ps ECI. circuits with high-perfbrmance süper self-aligned selectively gron'n SiGe base (SSSB) bipolar transistors, " IEEE Trans. Eleclron Devices., vol. 42, no. 3, pp. 390-398, March 1995
• [29] T. Nakamura and H. Nishizawa, "Recent progress in bipolar transistor technology, " IEEE Trans. Electron Devices., vol. 42, no. 3, pp. 483-488, Mareh 1995
• [30] S. Lombardo, A. Pinto, V. Raineri, P. Warcl, G. La Rosa, G. Privitera, and S. U. Campisano, "Sİ/Ge;Si,., heterojunction Bipolar Transistors with the Ge. Si,., base formed by Ge ion implantation in Si, " IEEE Eieclron Dev Lett-, vol. 17, no. 10, pp. 485-487, October 1996
• [31 J S. A. Lombardo, V. Privitera, A. Pmto, P. W<u-d, G. La Rosa. and S. U. Campisano, "Band -gap narromng and high-frequency characteristics of Si/Ge, Si,,, heterojunction Bipolar Transistors fonned by Ge ion implantation in Si, " IEEK Trans. Electron Devices., vol. 45, no. 7, pp. 1531-1537, July 1998
• f32] K. Oda, E. Ohue, M. Tanabe, H. Shimamoto, and K. Washio. "DC and AÇ performaııces in selectively grown SİGe-base HBTs, " IEICE Trans. on Eleclronics, mi. E82C, no. l l, pp. 2013-2020, November 1999
• [33] J. D. Warnock, "Silicon bipolar device structures for digital applications: Technology trends and future directions, " 1EEE Trans. Eleclron Devices.. vol. 42, no. 3, pp. 377-389, Mareh 1995
• [34] K. Washio, "SiGe HBTs and ICs tor optical-fıber commmıication systems," Solid-Stale Electronics, vol. 43, no. S, pp. 1619-1625, August 1999.
• [351 A, Shuppen, S. Gerlach, H. Dietrich, D. Wandrei, U. se.iler, and U. Koenig, "1- W Siüe power HBT's for mobile communication, " IEEF. Microwave Guided Wave Letl., vol. 6, pp. 341-343, September 1996
• [36] P. A. Potyraj, K.J. Petrosky, K.D. Hobart, F. J. Kub, and P. E. Thompson, "A 230-W s-band SiGe heterojunction bipolar transistor, " IEEE Trans. Microwave Theory Tech., mi. 44, no. 12, pp. 2392-2397, December 1996
• [37] J. Zhang, H. Jia, P. -H. Tsien, and T. -C. Lo, "Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor, " IEEE Electron Device Lell. , vol. 20, no. 7, pp. 326-328, July 1999