Frequency and Voltage Dependent Properties of Ag/GO-NiO/p-Si/Al Structure at Low Frequencies

Öz

In this study, NiO doped GO thin film was coated on p-type silicon by sol-gel method.The dielectric properties of Ag/GO-NiO/p-Si/Al Schottky diode were determined from conductivity-voltage (G/ω-V) measurements and capacitance-voltage (C-V) measurements in the low frequency of 10 kHz-50 kHz-100 kHz at room temperature and in the dark. The interfacial state densities (Nss) and series resistances (Rs) was investigated using of Ag/ GO-NiO /p-Si/Al structure were calculated from the experimental results obtained from C-V measurements and G/ω-V measurements. It was observed that the values of Nss and Rs decreased with the enhancement of frequency. According to the results, it was seen that the Ag/GO-NiO/p-Si/Al structure produced showed diode property. Besides, the dielectric parameters, dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ) and AC electrical conductivity (σac) values of the Ag/GO-NiO/p-Si/Al structure were calculated. According to the results, ε', ε'', tanδ and σac values decreased with the increment of frequency values at low frequencies. Experimental results showed that ε', ε'', tanδ and σacwere strongly dependent on frequency, and all of the results obtained were found to be in agreement with the literature studies.

Anahtar Kelimeler

• Schottky diode
• GO-NiO
• interfacial layer

Düşük Frekanslarda Ag/GO- NiO/p-Si/Al Yapısının Frekans ve Voltaja Bağlı Özellikleri

Öz

Bu çalışmada, sol-jel yöntemi ile p-tipi silisyum üzerinde NiO katkılı GO ince film kaplanmıştır. Ag/GO-NiO/p-Si/Al Schottky diyodunun dielektrik özellikleri oda sıcaklığında ve karanlıkta, 10 kHz-50 kHz-100 kHz düşük frekans aralığında iletkenlik-voltaj (G/ω-V)ölçümleri ve kapasitans-voltaj (C-V) ölçümlerinden yararlanılarak araştırıldı.G/ω-V ölçümleri ve C-V ölçümlerinden elde edilen deneysel sonuçlardan, Ag/ GO-NiO/p-Si/Al yapısının seri dirençleri (Rs) ve arayüzey durum yoğunlukları (Nss) hesaplanmıştır. Artan frekansla Nss ve Rs değerlerinin azaldığı görülmüştür. Çıkan sonuçlara göre elde edilen Ag/GO-NiO/p-Si/Al yapısının diyot özelliği gösterdiği görülmüştür. Çıkan sonuçlar göz önüne alınarak Ag/GO-NiO/p-Si/Al yapısının dielektrik parametreleri; dielektrik sabiti (ε'), dielektrik kaybı (ε''), kayıp tanjantı (tanδ) ve AC elektrik iletkenliği (σac) hesaplanmıştır. Sonuçlara göre ε', ε'',tanδ ve σac değerleri düşük frekanslarda artan frekansla azalmıştır. Elde edilen bulgular, ε', ε'', tanδ ve σac'nin frekansa bağlı olduğunu güçlü bir şekilde göstermiştir. Elde edilen sonuçların tamamı literatür çalışmalarıyla uyum içinde olduğu görülmüştür.

Anahtar Kelimeler

• Schottky diyot
• GO-NiO
• Arayüzey tabakası

Kaynakça

1. Aras FG. Al/Poly(Methyl Methacrylate)/P-Si organik schottky diyotların üretimi, elektrik ve dielektrik özelliklerinin incelenmesi. Atatürk Üniversitesi Fen Bilimleri Enstitüsü Doktora tezi. Sayfa no: 69,Erzurum,Türkiye, 2015.
2. Avouris P., Chen Z., Perebeinos V. Carbon-based electronics. Nature Nanotechnology 2007; 2(10): 605–615.
3. Aydemir U. Au/SrTiO3/n-Si (Mfs) Schottky diyotların elektriksel parametrelerinin I-V, C-V ve Dlts metodu ile incelenmesi. Gazi Üniversitesi Fen Bilimleri Enstitüsü Yüksek Lisans tezi. Sayfa no:23 ,Ankara,Türkiye 2009.
4. Cao P., Wang L., Xu Y., Fu Y,. Ma X. Facile hydrothermal synthesis of mesoporous nickel oxide/reduced graphene oxide composites for high performance electrochemical supercapacitor. Electrochimica Acta 2015; 157: 359-368.
5. Cheng D. Field and wave electromagnetics. 2nd ed. NewYork: Addison-Wesley; 1989.
6. Chelkowski A. Dielectric physics. 6th ed.Amsterdam: Elsevier; 1980.
7. Demirezen S., Sönmez Z., Aydemir U., Altındal Ş. Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature.Current Applied Physics 2012; 12(1): 266-272.
8. Jiwei Z., Xi Y., Mingzhong W., Liangying Z. Preparation and microwave characterization of PbTiO3 ceramic and powder. Journal of Physics 2001; 34(9): 1413.

9. Karataş Ş. Studies on electrical and the dielectric properties in MS structures. Journal of non-crystalline solids 2008; 354(30): 3606-3611.
10. Karataş Ş., Türüt A. The frequency-dependent electrical characteristics of interfaces in the Sn/p-Si metal semiconductor structures. Microelectronics Reliability 2010; 50(3): 351-355.
11. Karasu S., Öztürk A., Şağban HM., Özmen ÖT. Au/P3HT: PCBM/n-Si Schottky bariyer diyotlarda PCBM konsantrasyonunun kapasitans-voltaj (CV) ve iletkenlik-voltaj (G/wV) karakteristiklerine etkisi ve dielektrik özelliklerin incelemesi. Düzce Üniversitesi Bilim ve Teknoloji Dergisi 2016; 4(1): 55-66.
12. Karteri I., Karataş Ş., Yakuphanoglu F. Photosensing properties of pentacene thin film transistor with solution-processed silicon dioxide/graphene oxide bilayer insulators. Journal of Materials Science: Materials in Electronics 2016; 27(5): 5284-5293.
13. Karteri I., Karataş Ş., Yakuphanoglu F. Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor. Applied Surface Science 2014; 318: 74-78.
14. Li W., Bu Y., Jin H., Wang J., Zhang W., Wang S. The preparation of hierarchical flowerlike NiO/reduced graphene oxide composites for high performance supercapacitor applications. Energy & Fuels 2013; 27(10): 6304-6310.
15. Liu J., Xue Y., Gao Y., Yu D., Durstock M., Dai L. Hole and electron extraction layers based on graphene oxide derivatives for high-performance bulk heterojunction. Advanced Materials 2012; 24(17): 2228-2233.
16. Michigan Üniversitesi. RCA Clean. LNF Wiki, 9.02.2021, Erişim Adresi: https://lnf wiki.eecs.umich.edu/wiki/RCA_Clean , Erişim Tarihi, 25.01.2023
17. Moon KS., Choi HD., Lee AK., Cho KY., Yoon HG., Suh KS. Dielectric properties of epoxy-dielectrics-carbon black composite for phantom materials at radio frequencies. Journal of Applied Polymer Science 2000; 77(6): 1294-1302.
18. Nicollian EH., Brews JR. Metal oxide semiconductor physics and technology. NewYork: Wiley; 1982.
19. Tongay S., Lemaitre M., Miao X., Gila B., Appleton BR., Hebard AF. Rectification at graphene-semiconductor interfaces: zero-gap semiconductor-based diodes. Physical Review X 2012; 2(1): 011002.
20. Özmen ÖT. Effects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodes.Microelectronics Reliability 2014; 54(12): 2766-2774.
21. Pissis P., Kyritsis A. Electrical conductivity studies in hydrogels. Solid State Ionics 1997; 97(1-4): 105-113.
22. Pumera M. Graphene-based nanomaterials and their electrochemistry. Chemical Society Reviews 2010; 39(11): 4146-4157.
23. Rajaseker K., Subbarayan A. Sathyamoorthy R. AC and dielectric properties of thermally evaporated p-type (Sb2Te3)70 (Bi2Te3)30 thin films. Solar Energy Materials and Solar Cells 2006; 90(15): 2515-2522.
24. Stankovi S., Dmitriy AD., Dommet HBG., Kohlhaas KM., Zimney EJ., Stach EA., Piner RD., SonBinh TN., Ruoff RS. Graphene-based composite materials. Nature 2006; 442(7100): 282–286.
25. Stoller MD., Park SY., Zhu RS. Graphene-based ultracapacitors. Nano Letters 2008; 8(10): 3498–3502.
26. Tataroğlu A. Electrical and dielectric properties of MIS Schottky diodes at low temperatures. Microelectronic Engineering 2006; 83(11-12): 2551-2557.
27. Wageh S., Al-Ghamdi AA., Al-Turki Y., Dere A., Tjong SC., El-Tantawy F., Yakuphanoglu F. Electrical and photoresponse properties of Au/ reduced graphene:poly(3-hexylthiophene) nanocomposite /p-Si photodiodes. Optical and Quantum Electronics 2015; 47(7): 1779-1789.
28. Yucedag I., Altındal S., Tataroğlu A. On the profile of frequency dependent series resistance and dielectric constant in MIS structure. Microelectronic Engineering 2007; 84(1): 180-186.