n-In2S3/p-Si Tabanlı Heteroeklem Fotodedektörlerin Üretimi ve Karakterizasyonu

Yıl 2025, Cilt: 8 Sayı: 4, 1780 - 1794, 16.09.2025

Esra Aslan

https://doi.org/10.47495/okufbed.1621471

Öz

In2S3, uygun yasak bant aralığı nedeniyle optoelektronik uygulamalarda tercih edilen bir yarıiletkendir. Bu çalışmada, In2S3 filmler kimyasal çözelti yöntemiyle farklı S/In molar oranlarda hazırlanmış ve yapısal, morfolojik ve optiksel özellikleri incelenmiştir. Ayrıca, p tipi silisyum altlıklar üzerine In2S3 ince filmler spin kaplama tekniği ile kaplanarak n-In2S3/p-Si yapısında heteroeklem fotodedektör cihazlar hazırlanmıştır. X-ışını kırınımı (XRD) sonuçlarına göre tüm filmler tetragonal yapıda kristalleşmektedirler. Taramalı elektron mikroskobu (SEM) görüntüleri filmlerin tanecikli yapıda olduğunu göstermektedir. Filmlerin yasak bant aralıkları 2.84 eV ile 2.94 eV aralığında S/In oranına bağlı olarak değişiklik göstermektedir. Karanlık ortamda yapılan ölçümlere göre cihazlar pn eklem diyot karaktersitik yapıdadırlar. Görünür ışık altında yapılan ölçümler ise cihazların ışığa tepki verdiğini göstermektedir. 5mW/cm2 görünür ışık altında cihazların fotohassasiyetleri 3396 gibi yüksek bir değere ulaşmaktadır. Maksimum fotoyanıt ve spesifik tespit ise 9×10-3 A/W ve 6.2×1010 Jones olarak kaydedilmiştir. Bununlabirlikte, bu cihazların yükselme ve bozulma süreleri 1 saniyenin altında değerlere sahiptir. S/In oranı ayarlanarak cihazların karanlık akımları 3.7×10-10 A değerine kadar düşürülmüştür. Bu kadar düşük karanlık akım da cihazların spesifik tespit değerlerini 6.2×1010 Jones değerine kadar yükseltmiştir. Bu çalışma sonuçları In2S3 yarıiletkenin p tipi silisyum ile pn eklem yapı oluşturmak için son derece uygun bir malzeme olduğunu göstermektedir. Ayrıca In2S3 yarıiletkeni hazırlanırken çözeltideki S/In oranındaki değişim filmlerin hem fiziksel özelliklerini hemde cihazların parameterlerini önemli ölçüde etkilemektedir.

Anahtar Kelimeler

In2S3 , Silisyum , Fotodedektör , Heteroeklem , İnce Film

Fabrication and Characterization of n-In2S3/p-Si Based Heterojunction Photodetectors

Öz

In2S3 is a preferred semiconductor in optoelectronic applications due to its favorable bandgap. In this study, In2S3 films were prepared at different S/In molar ratios by chemical solution method and their structural, morphological and optical properties were examined. In addition, heterojunction photodetector devices with n- In2S3/p-Si structure were prepared by coating In2S3 thin films on p-type silicon substrates with the spin coating technique. According to X-ray diffraction (XRD) results, all films crystallize in a tetragonal structure. Scanning electron microscope (SEM) images show that the films have a granular structure. The band gaps of the films vary between 2.84 eV and 2.94 eV depending on the S/In ratio. According to the measurements made in the dark environment, the devices have a pn junction diode characteristic structure. Measurements made under visible light show that the devices respond to light. Under 5mW/cm2 visible light, the photosensitivity of the devices reaches a high value of 3396. The maximum photoresponsivity and specific detectivity were recorded as 9×10-3 A/W, and 6.2×1010 Jones. Moreover, these devices have rise and decay times of less than 1 second. By adjusting the S/In ratio, the dark current of the devices was reduced to 3.7×10-10 A. This low dark current also increased the specific detectivity values of the devices up to 6.2×1010 Jones. The results of this study clearly show that In2S3 semiconductor is a highly compatible material for forming pn junction structure with p-type silicon. In addition, while preparing the In2S3 semiconductor, the change in the S/In ratio in the solution significantly affects both the physical properties of the films and the parameters of the devices.

Anahtar Kelimeler

In2S3 , Silicon , Photodetector , Heterojunction , Thin Film

Kaynakça

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