n-In2S3/p-Si Tabanlı Heteroeklem Fotodedektörlerin Üretimi ve Karakterizasyonu

Öz

In2S3, uygun yasak bant aralığı nedeniyle optoelektronik uygulamalarda tercih edilen bir yarıiletkendir. Bu çalışmada, In2S3 filmler kimyasal çözelti yöntemiyle farklı S/In molar oranlarda hazırlanmış ve yapısal, morfolojik ve optiksel özellikleri incelenmiştir. Ayrıca, p tipi silisyum altlıklar üzerine In2S3 ince filmler spin kaplama tekniği ile kaplanarak n-In2S3/p-Si yapısında heteroeklem fotodedektör cihazlar hazırlanmıştır. X-ışını kırınımı (XRD) sonuçlarına göre tüm filmler tetragonal yapıda kristalleşmektedirler. Taramalı elektron mikroskobu (SEM) görüntüleri filmlerin tanecikli yapıda olduğunu göstermektedir. Filmlerin yasak bant aralıkları 2.84 eV ile 2.94 eV aralığında S/In oranına bağlı olarak değişiklik göstermektedir. Karanlık ortamda yapılan ölçümlere göre cihazlar pn eklem diyot karaktersitik yapıdadırlar. Görünür ışık altında yapılan ölçümler ise cihazların ışığa tepki verdiğini göstermektedir. 5mW/cm2 görünür ışık altında cihazların fotohassasiyetleri 3396 gibi yüksek bir değere ulaşmaktadır. Maksimum fotoyanıt ve spesifik tespit ise 9×10-3 A/W ve 6.2×1010 Jones olarak kaydedilmiştir. Bununlabirlikte, bu cihazların yükselme ve bozulma süreleri 1 saniyenin altında değerlere sahiptir. S/In oranı ayarlanarak cihazların karanlık akımları 3.7×10-10 A değerine kadar düşürülmüştür. Bu kadar düşük karanlık akım da cihazların spesifik tespit değerlerini 6.2×1010 Jones değerine kadar yükseltmiştir. Bu çalışma sonuçları In2S3 yarıiletkenin p tipi silisyum ile pn eklem yapı oluşturmak için son derece uygun bir malzeme olduğunu göstermektedir. Ayrıca In2S3 yarıiletkeni hazırlanırken çözeltideki S/In oranındaki değişim filmlerin hem fiziksel özelliklerini hemde cihazların parameterlerini önemli ölçüde etkilemektedir.

Anahtar Kelimeler

• In2S3
• Silisyum
• Fotodedektör
• Heteroeklem
• İnce Film

Fabrication and Characterization of n-In2S3/p-Si Based Heterojunction Photodetectors

Abstract

In2S3 is a preferred semiconductor in optoelectronic applications due to its favorable bandgap. In this study, In2S3 films were prepared at different S/In molar ratios by chemical solution method and their structural, morphological and optical properties were examined. In addition, heterojunction photodetector devices with n- In2S3/p-Si structure were prepared by coating In2S3 thin films on p-type silicon substrates with the spin coating technique. According to X-ray diffraction (XRD) results, all films crystallize in a tetragonal structure. Scanning electron microscope (SEM) images show that the films have a granular structure. The band gaps of the films vary between 2.84 eV and 2.94 eV depending on the S/In ratio. According to the measurements made in the dark environment, the devices have a pn junction diode characteristic structure. Measurements made under visible light show that the devices respond to light. Under 5mW/cm2 visible light, the photosensitivity of the devices reaches a high value of 3396. The maximum photoresponsivity and specific detectivity were recorded as 9×10-3 A/W, and 6.2×1010 Jones. Moreover, these devices have rise and decay times of less than 1 second. By adjusting the S/In ratio, the dark current of the devices was reduced to 3.7×10-10 A. This low dark current also increased the specific detectivity values of the devices up to 6.2×1010 Jones. The results of this study clearly show that In2S3 semiconductor is a highly compatible material for forming pn junction structure with p-type silicon. In addition, while preparing the In2S3 semiconductor, the change in the S/In ratio in the solution significantly affects both the physical properties of the films and the parameters of the devices.

Keywords

• In2S3
• Silicon
• Photodetector
• Heterojunction
• Thin Film

Kaynakça

1. Agrohiya S., Kumar V., Rawal I., Dahiya S., Goyal PK., Kumar V., Punia R. Fabrication of n-TiO2/p-Si photo-diodes for self-powered fast ultraviolet photodetectors. Silicon 2022; 14: 11891–1190.
2. Ahmad I., Zou Y., Yan J., Liu Y., Shukrullah S., Naz MY, Hussain H., Khan QW., Khalid NR. Semiconductor photocatalysts: A critical review highlighting the various strategies to boost the photocatalytic performances for diverse applications. Advances in Colloid and Interface Science 2023; 311: 102830.
3. Al-Ani SKJ., Ismail RA., Al-Ta’ay HFA. Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector. J Mater Sci: Mater Electron 2006; 17: 819–824.
4. Ashfaq A., Jacob J., Mahmood K., Mehboob K., Ikram S., Ali A., Amin N., Hussain S., Rehman U. Effect of sulfur amount during post-growth sulfurization process on the structural, morphological and thermoelectric properties of sol-gel grown quaternary chalcogenide Cu2ZnSnS4 thin films. Physica B: Condensed Matter 2021; 602: 412497.
5. Aslan E., Kaya D., Karadağ K., Harmancı U., Aslan F. Enhancing performance of SnS2 based self-powered photodetector and photocatalyst by Na incorporation. Ceramics International 2024; 50(15): 27626-27634.
6. Bchiri Y., Tiss B., Bouguila N., Souissi R., Kraini M., Vázquez-Vázquez C., Khirouni K., Alaya S. Electrical investigation of sprayed In2S3 film. Materials Science in Semiconductor Processing 2021; 121: 105294.
7. Chapi S. Optical, electrical and electrochemical properties of PCL5/ITO transparent conductive films deposited by spin-coating ‒ Materials for single-layer devices. Journal of Science: Advanced Materials and Devices 2020; 5(3): 322-329.
8. Ebrahimi S., Yarmand B., Naderi N. Effect of the sulfur concentration on the optical band gap energy and urbach tail of spray-deposited ZnS Films ACERP 2017; 3(4): 6-12.

9. Gong K., Li L., Yu W., Mu H., Yuan J., Hao R., Liu B., Mei Z., Mei L., Li H., Lin S. High detectivity and fast response avalanche photodetector based on GaSe/PtSe2 p–n junction. Materials & Design 2023; 228: 111848.
10. Gurubhaskar M., Thota N., Raghavender M., Chandra GH, Prathap P., Subbaiah YPV. Influence of sulfurization time on two step grown SnS thin films. Vacuum 2018; 155: 318-324.
11. Hankare PP., Chate PA., Sathe DJ. CdS thin film: Synthesis and characterization. Solid State Sciences 2009; 11(7): 1226-1228.
12. Khan MI., Bhatti KA., Qindeel R., Althobaiti HS., Alonizan N. Structural, electrical and optical properties of multilayer TiO2 thin films deposited by sol–gel spin coating. Results in Physics 2017; 7: 1437-1439.
13. Kumar B., Kumar MC. Indium sulfide based metal-semiconductor-metal ultraviolet-visible photodetector. Sensors and Actuators A: Physical 2019; 299: 111643.
14. Kumar H., Shaji B., Kumar MC. Fabrication of visible light photodetector using co-evaporated Indium Sulfide thin films. J Mater Sci:Mater Electron 2019; 30: 17986–17998.
15. Ligang W., Yanlai W., Wei Y., Jun Z., Jingang X. Effect of sulfurization time on the formation of CuInS2 thin films. Rare Metal Materials and Engineering, 2015; 44(4): 805-807.
16. Lin P., Lin S., Cheng S., Ma J., Lai Y., Zhou H., Jia H. Optical and electrical properties of Ag-doped In2S3 thin films prepared by thermal evaporation. Advances in Materials Science and Engineering 2014; ID 370861.
17. Moger SN., Mahesha MG. Spectroscopic and electrical analysis of p–Si/n-ZnSxSe1−x (0.0 ≤ x ≤ 1.0) heterostructures for photodetector applications. J Mater Sci: Mater Electron 2023; 34: 958.
18. Muchuweni E., Sathiaraj TS., Nyakotyo H. Synthesis and characterization of zinc oxide thin films for optoelectronic applications. Heliyon 2017: 3(4): e00285.
19. Robin MSR., Rahaman MM. A comparative performance analysis of CdS and In2S3 buffer layer in CIGS solar cell, 2016 2nd International Conference on Electrical, Computer & Telecommunication Engineering (ICECTE). Rajshahi, Bangladesh 2016; 1-4, doi: 10.1109/ICECTE.2016.7879639.
20. Salam JA., Anand AM., Raj A., Nath A., Jayakrishnan R. Self-powered response in β-In2S3 thin films. Journal of Science: Advanced Materials and Devices 2024; 9(1): 100671.
21. Uc-Canché S., Camacho-Espinosa E., Mis-Fernández R., Loeza-Poot M., Ceh-Cih F., Peña JL. Influence of sulfurization time on Sb2S3 synthesis using a new graphite box design. Materials 2024; 17: 1656.
22. Wang H., Sun Y., Chen J., Wang F., Han R., Zhang C., Kong J., Li L., Yang JA. Review of perovskite-based photodetectors and their applications. Nanomaterials (Basel) 2022; 12(24): 4390.
23. Wang N., Bai Y., Zhao F., Yang X., Gu F., Wang S., Li J., Fu H., An X. Hydrothermal synthesis of La-doped In2O3 nanosheets-assembled microflowers for sensing n-butanol. J Mater Sci 2024; 59: 15408–15421.
24. Wei A., Liu J., Zhuang M., Zhao Y. Preparation and characterization of ZnS thin films prepared by chemical bath deposition. Materials Science in Semiconductor Processing 2013; 16(6): 1478-1484.
25. Qin Y., Long S., Dong H., He Q., Jian G., Zhang Y., Hou X., Tan P., Zhang Z., Lv H., Liu Q., Liu, M. Review of deep ultraviolet photodetector based on gallium oxide. Chinese Physics B 2019; 28(1): 018501.
26. Zhang Y., Hu M., Wang Z. Enhanced performances of p-Si/n-ZnO self-powered photodetector by interface state modification and pyro-phototronic effect. Nano Energy 2020; 71: 104630.