Ga1-xAlxAs/GaAs Kuantum Kuyusunda 2p Uyarılmış Durum İçin Bağlanma Enerjisi ve Normalize Edilmiş Bağlanma Enerjine Sıcaklık ve Elektrik Alan Etkisi

Yıl 2026, Cilt: 9 Sayı: 2, 685 - 695, 16.03.2026

Serpil Sucu Sema Minez

https://doi.org/10.47495/okufbed.1725238

https://izlik.org/JA23MK34ZW

Öz

Bu çalışmada, Ga1-xAlxAs/GaAs sonlu kuantum kuyusunda 2p uyarılmış durum için sıcaklık ve dış elektrik alan etkisi altında varyasyon yöntemi kullanılarak etkin kütle yaklaşımında yabancı atom enerjisi, bağlanma enerjisi ve normalize edilmiş bağlanma enerjisi hesaplanmıştır. Bu hesaplamalar, kuantum kuyusu genişliği, sıcaklık, dış elektrik alan ve yabancı atom konumuna bağlı olarak çeşitli değerler için yapılmıştır. Elde edilen sonuçlara göre, sıcaklık ve elektrik alanın bağlanma enerjisi ve normalize edilmiş bağlanma enerjisini önemli ölçüde değiştirdiği görülmüştür. Yabancı atom enerjisinin sıcaklık ve elektrik alanın artması ile arttığı, bağlanma enerjisinin ise azaldığı gösterilmiştir. Elde edilen sonuçlar, kuantum kuyusu yapılarında dış etkilerin enerji durumlarındaki değişimi daha önce yapılan çalışmalarla tutarlıdır.

Anahtar Kelimeler

Bağlanma Enerjisi, , Normalize Edilmiş Bağlanma Enerjisi, , Uyarılmış Durum, , Sıcaklık, , Elektrik Alan,

Effect of Temperature and Electric Field on Binding Energy and Normalized Binding Energy for 2p Excited State in Ga1-xAlxAs/GaAs Quantum Well

https://izlik.org/JA23MK34ZW

Öz

In this study, the impurity atom energy, binding energy, and normalized binding energy were calculated within the effective mass approximation using the variation method, considering the effects of temperature and external electric field on the 2p excited state in a Ga₁₋ₓAlₓAs/GaAs finite quantum well. These calculations were performed for various parameters, including quantum well width, temperature, external electric field strength, and impurity atom position. The results demonstrate that both temperature and electric field significantly influence the binding energy and normalized binding energy. Specifically, the impurity atom energy was observed to increase with increasing temperature and electric field, while the binding energy decreased under these conditions. The obtained results are consistent with previous studies on the change of energy states due to external effects in quantum well structures.

Anahtar Kelimeler

Bindin Energy, , Normalized Binding energy, , Excited State, , Temperature, , Electric Field,

Kaynakça

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