Ga1-xAlxAs/GaAs Kuantum Kuyusunda 2p Uyarılmış Durum İçin Bağlanma Enerjisi ve Normalize Edilmiş Bağlanma Enerjine Sıcaklık ve Elektrik Alan Etkisi

Öz

Bu çalışmada, Ga1-xAlxAs/GaAs sonlu kuantum kuyusunda 2p uyarılmış durum için sıcaklık ve dış elektrik alan etkisi altında varyasyon yöntemi kullanılarak etkin kütle yaklaşımında yabancı atom enerjisi, bağlanma enerjisi ve normalize edilmiş bağlanma enerjisi hesaplanmıştır. Bu hesaplamalar, kuantum kuyusu genişliği, sıcaklık, dış elektrik alan ve yabancı atom konumuna bağlı olarak çeşitli değerler için yapılmıştır. Elde edilen sonuçlara göre, sıcaklık ve elektrik alanın bağlanma enerjisi ve normalize edilmiş bağlanma enerjisini önemli ölçüde değiştirdiği görülmüştür. Yabancı atom enerjisinin sıcaklık ve elektrik alanın artması ile arttığı, bağlanma enerjisinin ise azaldığı gösterilmiştir. Elde edilen sonuçlar, kuantum kuyusu yapılarında dış etkilerin enerji durumlarındaki değişimi daha önce yapılan çalışmalarla tutarlıdır.

Anahtar Kelimeler

• Bağlanma Enerjisi,
• Normalize Edilmiş Bağlanma Enerjisi,
• Uyarılmış Durum,
• Sıcaklık,
• Elektrik Alan,

Effect of Temperature and Electric Field on Binding Energy and Normalized Binding Energy for 2p Excited State in Ga1-xAlxAs/GaAs Quantum Well

Öz

In this study, the impurity atom energy, binding energy, and normalized binding energy were calculated within the effective mass approximation using the variation method, considering the effects of temperature and external electric field on the 2p excited state in a Ga₁₋ₓAlₓAs/GaAs finite quantum well. These calculations were performed for various parameters, including quantum well width, temperature, external electric field strength, and impurity atom position. The results demonstrate that both temperature and electric field significantly influence the binding energy and normalized binding energy. Specifically, the impurity atom energy was observed to increase with increasing temperature and electric field, while the binding energy decreased under these conditions. The obtained results are consistent with previous studies on the change of energy states due to external effects in quantum well structures.

Anahtar Kelimeler

• Bindin Energy,
• Normalized Binding energy,
• Excited State,
• Temperature,
• Electric Field,

Kaynakça

1. Akbas H., Dane C., Guleroglu A., Minez S. The effect of magnetic field in a GaAs/AlAs spherical quantum dot with a hydrogenic impurity. Physica E: Low-dimensional Systems and Nanostructures 2009; 41(4): 605-608.
2. Akbas H., Sucu S., Minez S., Dane C., Akankan O., Erdogan I. Ground state normalized binding energy of impurity in asymmetric quantum wells under hydrostatic pressure. Superlattices and Microstructures 2016; 94: 131-137.
3. Bastard G. Hydrogenic impurity states in a quantum well: A simple model. Physical Reviev B 1981; 24(8): 4714-4722.
4. Bulut P., Erdogan I., Akbas H. Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure. Physica E 2014; 63(1): 299-303.
5. Dane C., Akbas H., Minez S., Guleroglu A. Electric field effect in a GaAs/AlAs spherical quantum dot. Physica E: Low-dimensional Systems and Nanostructures 2008; 41(2): 278-281.
6. Dane C., Akbas H., Guleroglu A., Minez S., Kasapoglu K. The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot. Physica E: Low-dimensional Systems and Nanostructures 2011; 44(1): 186-189.
7. Duque CA., Montes A., Morales AL., Porras-Montenegro N. Effects of applied electric field on the binding energy of shallow donor impurities in GaAs low –dimensional systems. J. Phys. Condens Matter 1997; 9: 5977-5987.
8. Erdogan I., Akankan O., Akbas H. Simultaneous effects of temperature, hydrostatic pressure and electric field on the self-polarization and electric field polarization in a GaAs/Ga0.7Al0.3As spherical quantum dot with a donor impurity. Superlattices and Microstructures 2013; 59(1): 13-20.

9. Elabsy AM. Temperature dependence of shallow donor states in GaAs-AlxGa1-xAs compositional. Süperlattice Physica Scripta 1992; 46(5): 473-475.
10. John Peter A., Navaneethakrishnan K. Effects of position-dependent effective mass and dielectric function of a hydrogenic donor in a quantum dot. Physica E: Low-dimensional Systems and Nanostructures 2008; 40(8): 2747-2751.
11. John Peter A. Simultaneous effects of pressure and magnetic field on donors in a parabolic quantum dot. Solid State Comunications 2008; 147(7-8): 296-300.
12. Jayam SRG., Navaneethakrishnan K. Pressure and temperature dependent carrier mobility in a quantum well wire with polaronic effects. Phys. Stat. Sol. A 1996; 157(1): 107-114.
13. Kirak M., Altinok Y., Yilmaz S. The effects of the hydrostatic pressure and temperature on binding energy and optical properties of a donor impurity in a spherical quantum dot under external electric field. Journal of Luminescence 2013; 136: 415-421.
14. Klar PJ., Grüning H., Heimbrodt W. Pressure and temperature dependent studies of GaNxAs1–x/GaAs quantum well structures. Phys. Status Solidi B 2001; 223(1): 163-169.
15. Mese AI., Cicek E., Ozkapi SG., Ozkapi B., Erdogan I. Laser field effect on the normalized self-polarization, self-polarization and binding energy in square quantum wells made of different materials. Physica B Condensed Matter 2023; 669: 415311.
16. Restrepo RL., Miranda Guillermo L., Duque CA., Mora-Ramos ME. Simultaneous effects of hydrostatic pressure and applied electric field on the impurity-related self-polarization in GaAs/Ga1-xAlxAs multiple quantum wells. Journal of Luminescence 2021; 131(5): 1016-1021.
17. Rejo Jeice A., Joseph Wilson KS. Hydrostatic pressure and polaronic effect on the confined energies in a spherical quantum dot. Indian Journal of Pure &Applied Physics 2016; 54: 431-438.
18. Sadeghi E. Impurity binding energy of excited states in spherical quantum dot. Physica E 2009; 41(7): 1319-1322
19. Sucu S., Minez S., Akbas H. Antisimetrik AlxLGa1-xLAs/GaAs/AlxRGa1-xRAs kuantum kuyusunda sıcaklık ve hidrostatik basınç etkileri. Trakya University Journal of Engineering Sciences 2017; 18(2): 137-143.
20. Sucu S., Minez S., Erdogan I. Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well. İndian J. Phys 2021; 95(9): 1691-1695.
21. Ulas M., Erdogan I., Cicek E., Senturk Dalgıc S. Self-polarization in GsAs-(Ga, Al)As quantum well wires: electric field and geometrical effects. Pyhsica E 2005; 25(4): 515-520.
22. Vanitha A., John Peter A. The effect of nonparabolicity on binding energy of ground and excited states in a corrugated quantum well. Superlattices and Microstructures 2009; 46(4): 679-686.
23. Yesilgul U., Sakıroglu S., Kasapoglu E., Sarı H., Sokmen I. The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires. Superlattices and Microstructures 2010; 48(1): 106-113.