Al/Metilen Mavisi/p-Si Metal-Arayüzey Tabakası-Yarıiletken Yapısının Kapasitans-Voltaj (C-V) ve Kondüktans-Voltaj (G/ꞷ-V) Karakteristiklerinin Düşük Frekanslarda İncelenmesi

Öz

Bu çalışmada, p-tipi silisyum (p-Si) tabanlı yapının üzerine, etanol içerisinde çözülmüş metilen mavisi çözeltisi spin coating yöntemi kullanılarak kaplandı. Oluşturulan Al/p-Si/Metilen Mavisi yapısının dielektrik özellikleri, karanlık ortam koşullarında ve 10 kHz-30 kHz-60 kHz-80 kHz-100 kHz arasındaki düşük frekanslarda gerçekleştirilen iletkenlik-voltaj (G/ω–V) ve kapasitans-voltaj (C–V) ölçümleriyle analiz edildi. Elde edilen deneysel veriler doğrultusunda, yapıya ait seri direnç (Rs) ve arayüzey durum yoğunluğu (Nss) değerleri hesaplandı. Bu hesaplamalar sonucunda, frekansın artmasıyla birlikte hem Rs hem de Nss değerlerinde azalma meydana geldiği tespit edildi. Ayrıca yapının dielektrik parametreleri olan dielektrik sabiti (ε'), dielektrik kayıp (ε''), kayıp tanjantı (tanδ) ve alternatif akım iletkenliği (σAC) değerleri de hesaplandı. Elde edilen sonuçlar, ε'', tanδ ve σAC değerlerinin frekans arttıkça azaldığını; buna karşın ε' değerinin frekansla birlikte yükseldiğini göstermektedir. Bu bulgular, Al/p-Si/Metilen Mavisi yapısının dielektrik davranışının frekansa önemli ölçüde bağımlı olduğunu ortaya koymaktadır.

Anahtar Kelimeler

• Metilen mavisi
• kapasitans- Voltaj
• İletkenlik- Voltaj
• Seri Direnç
• Ara Yüzey Durum Yoğunluğu

Destekleyen Kurum

Yok.

Investigation of the Capacitance-Voltage (C-V) and Conductance-Voltage (G/ꞷ-V) Characteristics of an Al/Methylene Blue/p-Si Metal-Interface Layer-Semiconductor Structure at Low Frequencies

Öz

In this study, a methylene blue solution dissolved in ethanol was coated onto a p-type silicon (p-Si)-based structure using the spin coating method. The dielectric properties of the resulting Al/p-Si/Methylene Blue structure were analyzed using conductance-voltage (G/ω–V) and capacitance-voltage (C–V) measurements performed under dark conditions at low frequencies ranging from 10 kHz to 30 kHz to 60 kHz to 80 kHz to 100 kHz. Based on the obtained experimental data, the series resistance (Rs) and interface density of states (Nss) values of the structure were calculated. These calculations revealed that both Rs and Nss values decreased with increasing frequency. Furthermore, the dielectric parameters of the structure, namely, dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), and alternating current conductance (σAC), were also calculated. The results show that ε'', tanδ, and σAC values decrease with increasing frequency, while ε' increases with increasing frequency. These findings demonstrate that the dielectric behavior of the Al/p-Si/Methylene Blue structure is significantly dependent on frequency.In this study, a thin film was deposited onto a p-type silicon (p-Si) substrate by drop-casting methylene blue dissolved in ethanol, followed by spin coating. The dielectric properties of the fabricated Al/p-Si/Methylene Blue semiconductor structure were investigated in the dark through conductance–voltage (G/ω–V) and capacitance–voltage (C–V) measurements at low frequencies of 10 kHz, 30 kHz, 60 kHz, 80 kHz, and 100 kHz. Based on the experimental G/ω–V and C–V data, important electrical parameters such as the series resistance (Rs) and interface state density (Nss) of the structure were calculated. It was observed that both Rs and Nss decreased with increasing frequency. Furthermore, dielectric parameters of the structure, including the dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), and AC electrical conductivity (σAC), were also calculated. The results showed that ε'', tanδ, and σAC values decreased with increasing frequency, while the dielectric constant ε' exhibited an increasing trend. These findings strongly support that the dielectric behavior of the Al/p-Si/Methylene Blue semiconductor structure is significantly frequency-dependent.

Anahtar Kelimeler

• Methylene blue
• capacitance-voltage
• conductance-voltage
• series resistance
• interfacial density of states

Destekleyen Kurum

Yok

Etik Beyan

İhtiyaç duyulmamaktadır.

Kaynakça

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