Influence of Intense Laser Field on the Electronic Structure and Third-Harmonic Generation in Asymmetric Double Inverse Parabolic Quantum Wells

Yıl 2025, Cilt: 8 Sayı: 4, 1644 - 1653, 16.09.2025

Ozan Öztürk

https://doi.org/10.47495/okufbed.1635337

Öz

This study explores the effects of an intense laser field (ILF) on the energy levels, electron probability distributions, and third-harmonic generation (THG) in asymmetric double inverse parabolic quantum wells (ADIPQW). The Schrödinger equation is solved using the finite element method under the effective mass approximation, incorporating ILF effects via the Floquet method. For ILF parameter α0 = 0, 2, 4, 6, and 8 nm, we analyze the modifications in potential profiles, energy differences, dipole moment matrix elements (DMME), and THG coefficients. The results indicate that increasing ILF intensity leads to shifts in energy levels and electron localization. The energy differences E₂₁, E₃₁/₂, and E₄₁/₃ show distinct trends under varying ILF, directly affecting THG resonance peak positions. The DMME product remains nearly constant at low ILF values but fluctuates significantly at higher ILF intensities, peaking at α0 = 5 nm and reaching a minimum at α0 = 7 nm. These findings highlight ILF as a tunable parameter for controlling electronic properties and nonlinear optical responses in semiconductor quantum structures.

Anahtar Kelimeler

Intense laser field , Parabolic quantum well , Third-harmonic generation

Asimetrik Çift Ters Parabolik Kuantum Kuyularındaki Yoğun Lazer Alanının Elektronik Yapı ve Üçüncü Harmonik Üretimi Üzerindeki Etkisi

Öz

Bu çalışma, asimetrik çift ters parabolik kuantum kuyularında (ADIPQW) yoğun lazer alanının (ILF) enerji seviyeleri, elektron olasılık dağılımları ve üçüncü harmonik üretimi (THG) üzerindeki etkilerini incelemektedir. Schrödinger denklemi, etkin kütle yaklaşımı çerçevesinde sonlu elemanlar yöntemi kullanılarak çözülmüş ve ILF etkileri Floquet yöntemi aracılığıyla modellenmiştir. ILF parametresi α0 = 0, 2, 4, 6 ve 8 nm için, potansiyel profillerindeki değişimler, enerji farkları, dipol moment matris elemanları (DMME) ve THG katsayıları analiz edilmiştir. Sonuçlar, ILF şiddetinin artmasının enerji seviyelerinde kaymalara ve elektron lokalizasyonunda değişimlere yol açtığını göstermektedir. Enerji farkları E₂₁, E₃₁/₂ ve E₄₁/₃, değişen ILF değerleri altında farklı eğilimler sergileyerek THG rezonans tepe noktalarını doğrudan etkilemektedir. DMME çarpanı düşük ILF değerlerinde neredeyse sabit kalırken, yüksek ILF şiddetlerinde önemli dalgalanmalar göstermekte, α0 = 5 nm’de maksimuma ulaşırken α0 = 7 nm’de minimum değerine inmektedir. Bu bulgular, ILF’nin yarı iletken kuantum yapılarında elektronik özellikleri ve doğrusal olmayan optik tepkileri kontrol etmek için ayarlanabilir bir parametre olarak işlev gördüğünü ortaya koymaktadır.

Anahtar Kelimeler

Yoğun lazer alanı , Parabolik kuantum kuyusu , Üçüncü harmonik üretimi

Kaynakça

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