Comparative theoretical investigation of passively mode-locked diode lasers with different cavity configurations

Öz

In this study, modelling results of 1550 nm AlGaInAs/InP passively mode-locked semiconductor lasers with two gain sections and one absorber section are reported using propagation wave equations according to different lengths and positions of the these sections. Comparative results of output power, carrier number and pulse width of three section semiconductor lasers are obtained using different cavity lengths. It has been found that three-section lasers with a longer first gain section have higher output power of 920 mW and shorter pulse durations of approximately 1.57 ps. When the current and voltage are kept constant, higher output power and higher electric field are obtained as the cavity length gets shorter.

Anahtar Kelimeler

• Multisection laser diode
• Modeling
• Passively mode locking

Farklı kavite konfigürasyonlarına sahip pasif mod kilitli diyot lazerlerin karşılaştırmalı teorik incelenmesi

Öz

Bu çalışmada, iki kazanç bölümü ve bir soğurucu bölümü olan 1550 nm AlGaInAs/InP pasif mod kilitli yarı iletken lazerlerin modelleme sonuçları, bu bölümlerinin farklı uzunluk ve konumlarına göre ilerleyen dalga denklemleri kullanılarak raporlanmaktadır. Üç bölümlü yarı iletken lazerlerin çıkış gücü, taşıyıcı sayısı ve darbe genişliğinin karşılaştırmalı sonuçları, farklı kavite uzunlukları kullanılarak elde edildi. Birinci kazanç bölümü daha uzun olan üç bölümlü lazerlerin, 920 mW'lık daha yüksek çıkış gücüne ve yaklaşık 1.57 ps'lik daha kısa darbe sürelerine sahip olduğu bulunmuştur. Akım ve gerilim sabit tutulduğunda kavite uzunluğu kısaldıkça daha yüksek çıkış gücü ve elektrik alan elde edilir.

Anahtar Kelimeler

• Çok bölmeli lazer diyot
• Modelleme
• Pasif kip kilitleme

Kaynakça

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