Elektrokimyasal büyütme tekniğiyle büyütülen geçirgen NiO ince filmlerin hazırlanması ve karakterizasyonu

Öz

ITO altlık üzerine geçirgen NiO (nikel oksit)  ince filmler farklı katodik akımlarda elektrokimyasal büyütme tekniği ile büyütülmüştür. Büyütme sonrası filmler 350 °C’de hava ortamında 2 sa. tavlanmıştır. X-ışını kırınım (XRD) örnekleri altlık üzerine büyütülen filmlerin (111), (200) ve (222) yönelimlere sahip tek fazlı kübik yapılı polikristal olduklarını göstermiştir.  Soğurma ölçümleriyle büyütülen NiO filmlerin band aralığı 2.85 eV olarak hesaplanmıştır. 310-800 nm aralığında alınan Fotolüminesans (PL) ölçümlerinden NiO ince filmlerin üç emisyon pikine sahip olduğu görülmüştür. Taramalı elektron mikroskobu (SEM) ve atomik kuvvet mikroskobu (AFM) ile büyütülen filmlerin yüzey morfolojisi incelenmiştir. Fourier Dönüşümlü İnfrared Spektroskopi (FTIR) analizleriyle filmlerin oluşumunda Ni-O bağların titreşim modlarına sahip olduğu ortaya çıkarılmış ve filmlerin görünür bölgede %50 ile %80 arasında ortalama bir optik geçirgenliğe sahip olduğu görülmüştür. XPS ölçümleri Ni/O yönelimi ve farklı büyütme koşullarına bağlı olarak büyütülen NiO filmlerin kimyasal bağlanma durumları gibi kimyasal özelliklerini incelemek için gerçekleştirilmiştir. Raman ölçümleri elektrokimyasal olarak büyütülen NiO filmlerinin stokiyometrik olmadığını göstermiştir. Görüldüğü gibi, NiO nanoparçacıkların yoğunluğu ve morfolojisinin optoelektronik aygıtların oluşumunda oldukça önemli olduğu anlaşılmıştır.

Anahtar Kelimeler

• NiO,XRD,Elektrokimyasal büyütme,SEM

Characterization and preparation of transparent NiO thin films growth by electrochemical deposition technique

Öz

Transparent NiO thin films were growth in different cathodic currents by using electrochemical deposition technique on ITO substrates. After deposition, thin films were annealed at 350° for 2 hours in air environment. X-ray diffraction (XRD) patterns indicated that thin films growth on substrates have a single-phased cubic polycrystalline structure with orientations of (111), (200) and (222). Band gap of NiO films growth by using absorption measurements were calculated as 2.85 eV. The data obtained from the measurements of photoluminescence (PL) carried out between 310-800 nm, indicated that NiO thin films have three emission peaks. NiO thin films growth were investigated from the point of surface morphology by scanning electron microscopy (SEM) and atomic force microscopy (AFM). It has been revealed that there are the vibrational modes of Ni-O bonds in the formation of the films with Fourier transform infrared spectroscopy (FTIR) analysis and showed that the films have an average optical transmittance between 50% and 80% in the visible region. XPS measurements were studied to examine the chemical features as chemical bonding states of the NiO films deposited depending on Ni/O orientation and different conditions. Raman measurements displayed that the growth NiO films have not a stoichiometric nature. As seen, it has been understood that the density and morphology of NiO particles are very important in the formation optoelectronic devices.

Anahtar Kelimeler

• NiO,XRD,Electrochemical deposition,SEM

Kaynakça

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