Al, Cu Katkılı, Katkısız TiO2 İnce Film Biriktirme ve Katkılamanın Film Özelliklerine Etkisi

Yıl 2024, , 1081 - 1087, 25.07.2024

Mehmet Fatih Gözükızıl , Ali Birelli

https://doi.org/10.2339/politeknik.1208648

Öz

Bu çalışma kapsamında öncelikle katkısız TiO2 filmler daldırarak kaplama yöntemi ile üretildi. Optimum katkılı ve katkısız ince film biriktirme parametreleri yapılan ön denemeler ve daha önceki çalışmalar derlenerek; daldırma tekrar sayısı 8 kat, daldırma süresi 90sn, süreç arası kuruma sıcaklığı 110 °C, süresi 150 sn, tavlama sıcaklığı 500 °C ve süresi 2 saat olarak belirlendi. Daha sonra farklı fiziksel özelliklere sahip Al ve Cu metalleri ile katkılanarak, katkılamanın TiO2 ince filmlerin yüzeysel, yapısal ve optik özellikler üzerine etkileri incelendi. Katkılama oranları değiştirilerek (%1, %3, %5) katkılama ile TiO2 ince filmlerin fiziksel özelliklerindeki değişimler belirlendi. SEM görüntülüleri incelendiğinde; cam altlıklar yüzeylerine TiO2 ince filmler homojen olarak biriktirildiği ve Al katkılamanın TiO2 film katmanlarındaki tanecik boyutunu küçülttüğü, Cu katkılamanın ise tanecik boyutunu büyüttüğü tespit edildi. XRD analiz spektrumu verileri ile hesaplamalar sonucunda tanecik boyutundaki değişimlerin SEM görüntülerine uyumlu olduğu görüldü. Katkısız TiO2 ince filmler için Anataz fazında TiO2'nin bilinen net tepe noktaları, Al ve Cu katkısından kaynaklanan pikler XRD spektrumunda tespit edilerek ince film biriktirme işlemlerinin başarıyla yapıldığı belirlendi. Optik özellikler incelendiğinde yasak enerji aralığı TiO2 ince film için 3,21eV olarak hesaplandı. Al katkılama ile TiO2 ince filmlerin yasak enerji aralığının arttığı ve Cu katkılama ile yasak enerji aralığının azaldığı tespit edildi.

Anahtar Kelimeler

TiO2 İnce Film, Sol-Gel Daldırarak Kaplama, Yarıiletken, Al Katkılama, Cu Katkılama

Al, Cu Doped-Undoped TiO2 Thin Film Deposition and The Effect of Doping on Film Properties

Öz

In this study, undoped TiO2 films were first produced by dip coating method. Optimum doped and undoped thin film deposition parameters were determined by compiling preliminary trials and previous studies. The number of dipping repetitions was 8 times, the dipping time was 90 seconds, the drying temperature between the processes was 110 °C, the time was 150 seconds, the annealing temperature was 500 °C and the duration was 2 hours. The effects of doping with Al and Cu metals with different physical properties on the surface, structural and optical properties of TiO2 thin films were investigated. The changes in the physical properties of TiO2 thin films were determined by increasing the doping ratios (1%, 3%, 5%). When SEM images are examined; It was determined that TiO2 thin films were deposited homogeneously on the glass substrates and Al doping reduced the particle size in the TiO2 film layers, while Cu doping increased the particle size. As a result of the calculations with the XRD analysis spectrum data, it was seen that the changes in particle size were compatible with the SEM images. For undoped TiO2 thin films, the known net peaks of TiO2 in the Anatase phase, the peaks caused by Al and Cu doping were detected in the XRD spectrum, and it was determined that the thin film was successfully deposited. When the optical properties were examined, the band gap was calculated as 3.21eV for the TiO2 Thin film. It was determined that the band gap of the TiO2 thin films increased with Al doping and the band gap decreased with Cu doping.

Anahtar Kelimeler

TiO2 İnce Film, Sol-Gel Daldırarak Kaplama, Yarıiletken, Al Katkılama, Cu Katkılama

Kaynakça

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