Analyzing The InGaN LED Structures for White LED Applications

İlknur Kars Durukan; Mustafa Öztürk; Süleyman Özçelik; Ekmel Özbay

doi:10.2339/politeknik.339360

Analyzing The InGaN LED Structures for White LED Applications

Öz

In this paper, blue-light InGaN/GaN light-emitting diodes were deposited on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) to investigate the properties of blue LEDs with various well thickness having different indium composition. Structural properties of LEDs was studied by high-resolution X-ray diffraction (HRXRD), Photoluminescence (PL) and ultraviole (UV). Our aim is to increase the quality of the LED structure by taking advantage of the mosaic structure calculations. The use of LED in commercial areas has increased. But, there are great difficulties in preventing defects. Lateral and vertical crystal size, dislocations, tilt and twist properties are investigated with HR-XRD device by Vegard and William hall semi-experimental methods. While dislocation value of the first sample is lower than first sample with less indium content ration, stress value of first sample is higher than second sample. In addition, The twist angle of first sample is lower. This shows that while the structure is crystallized, the tension is much greater, which is an interesting result. This is due to the mismatch when the diode is cooled to lower temperatures than the growth temperature.

Anahtar Kelimeler

InGaN/GaN,MOCVD,HRXRD,PL,UV

Kaynakça

1) Chen H.-S., Yeh D.-M., Lu C.-F., Huang C.-F., Lu Y.-C., Chen C.-Y., Huang J.-J., and Yanga C. C., “Mesa-size-dependent color contrast in flip-chip blue/green two-color InGaN/GaN multi-quantum-well micro-light-emitting diodes”, Applied Physics Letters, 89: 093501, (2006).
2) Öztürk M.K., Çörekçi S., Tamer M., Çetin S.S., Özçelik S. And Özbay E. “Microstructural properties of InGaN/GaN light-emitting diodestructures with different In content grown by MOCVD”, Applied Physics A, 114: 1215–1221, (2014).
3) Yeh D.-M., Huang C.-F., Chen H.-S., Tang T.-Y., Lu C.-F., Lu Y.-C., Huang J.-J., Yang C. C., Liu I-S. and Su W.-F., “Control of the color contrast of a polychromatic light-emitting device with CdSe–ZnS nano-crystals on an InGaN–GaN quantum-well structure”, IEEE Photonics Technology Letters, 18: 5, (2006).
4) Chen H.-S., Yeh D.-M., Lu C.-F., Huang C.-F., Shiao W.-Y., Huang J.-J., Yang C. C. Liu I.-S. and Su W.-F. “White light generation with CdSe–ZnS nanocrystals coated on an InGaN–GaN quantum-well blue/green two-wavelength light-emitting diode”, IEEE Photonics Technology Letters, 18:13, (2006).
5) Yamada M., Narukawa Y. and Mukai T., “Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well”, Journal Applied Physics, 41: L246–L248, (2002).
6) Damilano B., Grandjean N., Pernot C. and Massies J. “Monolithic white light-emitting diodes based on InGaN/GaN multiple quantum wells”, Journal Applied Physics, 40: L918–L920, (2001).
7) Shei S.C., Sheu J.K., Tsai C.M., Lai W.C., Lee M. L. and Kuo C.H., “Emission mechanism of mixed-color InGaN/GaN multi-quantum-well light-emitting diodes”, Japanese Journal of Applied Physics, 45: 2463–2466, (2006).
8) Huang C.F., Lu C. F., Tang T. Y., Huang J. J. and Yang C. C., “Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells”, Applied Physics Letters, 90: 151122, (2007).

9) Yamada M., Narukawa Y., Tamaki H., Murazaki Y. and Mukai T.,"A methodological study of the best solution for generating white light using nitride-based light-emitting diodes", IEICE Trans. Electron. IEICE TRANSACTIONS on Electronics, E88-C: 1860, (2005).
10) Leszczynski M., Teisseyre H., Suski T., Grzegory I., Bockowski M., Jun J., Pakula K., Baranowski J.M., Foxon C.T. and Cheng T.S., “Lattice parameters of gallium nitride”, Applied Physics Letters, 69:73, (1996).
11) Cho S. I., Chang K. and Kwon M. S., “Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times”, Journal of Materials Science, 42: 3569–3572, (2007).
12) Harutyunyan V.S., Aivazyan A.P., Weber E.R., Kim Y., Park Y., Subramanya S.G., “High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures”, Journal of Physics D: Applied Physics, 34: A35, (2001).
13) Kittel C., “Introduction to solid state physics”, John Wiley & Sons, Singapore, 8, (1991).
14) Gil, B., “Group nitride semiconductor compounds”, Oxford University Press Inc., Oxford, 1, (1998).
15) Edgar J.H., Strite S., Akasaki I., Amano H. And Wetzel C., “Properties, processing and applications of gallium nitride and related semiconductors”, INSPEC, London, 381, (1999).
16) Kisielowski C., Kruger J., Ruvimov S., Suski T., Ager J. W., Jones E., Liliental-Weber Z., Rubin M., Weber E. R., Bremser M.D. and Davis R. F., “Strain-related phenomena in GaN thin films”, Physical review B, 54: 17745, (1996).
17) Kisielowski C., “Strain in GaN thin films and heterostructures”, Semiconductors and Semimetals, 57: 275-317, (1999).
18) Perry W. G., Zheleva T., Bremser M. D., Davis R. F., Shan W. and Song J. J. ,“Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grownon AIN/6H-SiC(0001) substrates”, Journal of Electronic Materials, 26: 224, (1997).
19) Skromme B. J., Zhao H., Wang D., Kong H. S., Leonard M. T., Bulman G. E. and Molnar R. J.,”Strain determination in heteroepitaxial GaN”, Applied Physics Letters, 71: 829, (1997).
20) Cetin S. S., Öztürk M. K., Özcelik S., Özbay E., “Strain analysis of InGaN/GaN multi quantum well LED structures”, Crystal Research and Technology, 47: 824–833, (2012).
21) Polian A., Grimsditch M. and Grzegory I., “Elastic constants of gallium nitride”, Journal of Applied Physics, 79: 3343, (1996).
22) Metzger T., Höppler R., Born E., Ambacher O., Stutzmann M., Stömmer R., Schuster M., Göbel H., Christiansen S., Albrecht M. and Strunk H.P., “Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry”, Philosophical Magazine a-Physics of Condensed Matter Structure Defects, 77: 1013, (1998).
23) Williamson G. K. and Hall W. H., “X-ray line broadening from filed aluminium and wolfram”, Acta Metallurgica, 1: 22, (1953).
24) Kars Durukan İ., Öztürk M. K., Çörekçi S., Tamer M., Bas Y., Özçelik S. and Özbay E., “Microstructural analysis with graded and non-graded ındium in ıngan solar cell”, Journal of Nanoelectronics and Optoelectronics, 12: 109–117, (2017).

Ayrıntılar

Birincil Dil

Türkçe

Konular

Mühendislik

Bölüm

Araştırma Makalesi

Yazarlar

İlknur Kars Durukan

Mustafa Öztürk
Türkiye

Süleyman Özçelik
Türkiye

Ekmel Özbay
Türkiye

Yayımlanma Tarihi

15 Eylül 2017

Gönderilme Tarihi

22 Eylül 2017

Kabul Tarihi

-

Yayımlandığı Sayı

Yıl 2017 Cilt: 20 Sayı: 3

DOI

https://doi.org/10.2339/politeknik.339360

IZ

https://izlik.org/JA54JZ93PW

Kaynak Göster

RIS / Bibtex

APA

Kars Durukan, İ., Öztürk, M., Özçelik, S., & Özbay, E. (2017). Analyzing The InGaN LED Structures for White LED Applications. Politeknik Dergisi, 20(3), 531-536. https://doi.org/10.2339/politeknik.339360

AMA

1.Kars Durukan İ, Öztürk M, Özçelik S, Özbay E. Analyzing The InGaN LED Structures for White LED Applications. Politeknik Dergisi. 2017;20(3):531-536. doi:10.2339/politeknik.339360

Chicago

Kars Durukan, İlknur, Mustafa Öztürk, Süleyman Özçelik, ve Ekmel Özbay. 2017. “Analyzing The InGaN LED Structures for White LED Applications”. Politeknik Dergisi 20 (3): 531-36. https://doi.org/10.2339/politeknik.339360.

EndNote

Kars Durukan İ, Öztürk M, Özçelik S, Özbay E (01 Eylül 2017) Analyzing The InGaN LED Structures for White LED Applications. Politeknik Dergisi 20 3 531–536.

IEEE

[1]İ. Kars Durukan, M. Öztürk, S. Özçelik, ve E. Özbay, “Analyzing The InGaN LED Structures for White LED Applications”, Politeknik Dergisi, c. 20, sy 3, ss. 531–536, Eyl. 2017, doi: 10.2339/politeknik.339360.

ISNAD

Kars Durukan, İlknur - Öztürk, Mustafa - Özçelik, Süleyman - Özbay, Ekmel. “Analyzing The InGaN LED Structures for White LED Applications”. Politeknik Dergisi 20/3 (01 Eylül 2017): 531-536. https://doi.org/10.2339/politeknik.339360.

JAMA

1.Kars Durukan İ, Öztürk M, Özçelik S, Özbay E. Analyzing The InGaN LED Structures for White LED Applications. Politeknik Dergisi. 2017;20:531–536.

MLA

Kars Durukan, İlknur, vd. “Analyzing The InGaN LED Structures for White LED Applications”. Politeknik Dergisi, c. 20, sy 3, Eylül 2017, ss. 531-6, doi:10.2339/politeknik.339360.

Vancouver

1.İlknur Kars Durukan, Mustafa Öztürk, Süleyman Özçelik, Ekmel Özbay. Analyzing The InGaN LED Structures for White LED Applications. Politeknik Dergisi. 01 Eylül 2017;20(3):531-6. doi:10.2339/politeknik.339360