Influence of Doping Atoms on Nonlinear Absorption, Ultrafast Dynamics and SHG Behaviors in GaSe Crystals

Yıl 2020, , 841 - 848, 01.09.2020

Ahmet Karatay

https://doi.org/10.2339/politeknik.664348

Cited By: 1

Öz

In this study, undoped GaSe, 0.1%Er and 0.1%Ce doped GaSe crystals were grown by using vertical Bridgman-Stockbarger technique. The nonlinear absorption properties and ultrafast charge transfer dynamics of all grown crystals were investigated by using open aperture Z-scan and ultrafast pump-probe spectroscopy techniques. The studied crystals showed nonlinear absorption at 1200nm wavelength with 100fs pulse duration. Nonlinear absorption coefficients increase with 0.1%Er and 0.1%Ce doping atoms. This behavior also leads to increasing of the free carrier densities with doping atoms and occurring of the excited states absorption. Second harmonic generation signals of the crystals were measured by fiber optic spectrometer. Second harmonic generation signals of the doped GaSe crystals shifted blue region of the spectrum as compared to the undoped GaSe crystal. According to ultrafast pump-probe experimental results, the undoped GaSe crystal indicates continuous excited state absorption signal while the doped GaSe crystals indicate saturable absorption behaviors after 2ns time delay between 630nm-650nm region corresponding to bottom of the conduction band. The saturable absorption signals indicate that the defect states which are occurred with doping atoms in crystal are localized under the conduction band. In conclusion of the experimental results, nonlinear absorption properties, frequency conversion and ultrafast charge transfer dynamics of the crystals can be controlled by doping atoms in crystals.

Anahtar Kelimeler

Nonlinear absorption, Z-scan technique, Ultrafast spectroscopy, Semiconductor crystal

GaSe Kristali İçerisindeki Katkılandırma Atomlarının Doğrusal Olmayan Soğurma, Ultrahızlı Dinamikler ve İkinci Harmonik Üretimi Davranışlarına Etkisi

Öz

Bu çalışmada dikey Bridgman-Stockbarger yöntemi kullanılarak saf GaSe, %0,1 Ce ve %0,1 Er katkılandırılmış GaSe kristalleri büyütülmüştür. Açık yarık Z-tarama ve ultrahızlı pompa-gözlem spektroskopi teknikleri kullanılarak büyütülen kristallerin doğrusal olmayan soğurma özellikleri ve ultrahızlı yük transfer dinamikleri araştırılmıştır. Çalışılan tüm kristaller, 1200 nm dalgaboyunda ve 100 fs atma süresinde doğrusal olmayan soğurma davranışları göstermiştir. Doğrusal olmayan soğurma katsayıları %0,1 Ce ve %0,1 Er katkılandırma atomları ile artmaktadır. Bu durum aynı zamanda katkılandırma atomları ile serbest taşıyıcı yoğunluklarının artmasına ve uyarılmış durum soğurmalarının meydana gelmesine neden olmaktadır. Kristallerin ikinci harmonik üretim sinyalleri fiber optik spektrometre yardımı ile ölçülmüştür. Katkılandırılmış GaSe kristallerinin ikinci harmonik üretim sinyalleri saf GaSe kristaline göre spektrumun mavi bölgesine kaymıştır. Ultrahızlı pompa-gözlem deney sonuçlarına göre saf GaSe kristali sürekli uyarılmış durum soğurmaları gösteriyorken, Ce ve Er katkılandırılmış olan kristallerde 2 nanosaniye zaman gecikmesinden sonra iletim bandının hemen altına karşılık gelen dalga boylarında (630 nm-650 nm) doyum sinyalleri gözlenmiştir. Doyum sinyalleri, katkılandırma atomları ile kristal içerisinde oluşan kusur seviyelerinin iletim bandının hemen altına yerleştiğini göstermektedir. Deney sonuçlarına göre, kristallerin doğrusal olmayan soğurma özellikleri, frekans çevrimi ve ultrahızlı yük transfer dinamikleri kristal içerisine yapılan katkılandırma atomları ile kontrol edilebilmektedir. 

Anahtar Kelimeler

Doğrusal olmayan soğurma, Z-tarama yöntemi, Ultrahızlı spektroskopi, Yarıiletken kristal

Kaynakça

• Dmitriev V.G., G. G. G., Nikogosyan D.N. "Handbook for Nonlinear Optical Crystals",Third edition ed., Springer, Berlin, 1999.
• Vodopyanov K. L., Mirov S. B., Voevoolin V. G. and Schunemann P. G., "Two-photon absorption in GaSe and CdGeAs2", Opt Commun, 155: 47-50, (1998)
• Guo J., Li D. J., Xie J. J., Zhang L. M., Feng Z. S., Andreev Y. M., Kokh K. A., Lanskii G. V., Potekaev A. I., Shaiduko A. V. and Svetlichnyi V. A., "Limiting pump intensity for sulfur-doped gallium selenide crystals", Laser Phys Lett, 11:1-6, (2014)
• Guo J., Xie J. J., Li D. A. J., Yang G. L., Chen F., Wang C. R., Zhang L. M., Andreev Y. M., Kokh K. A., Lanskii G. V. and Svetlichnyi V. A., "Doped GaSe crystals for laser frequency conversion", Light-Sci Appl, 4: 1-12, (2015)
• Chen C. W., Tang T. T., Lin S. H., Huang J. Y., Chang C. S., Chung P. K., Yen S. T. and Pan C. L., "Optical properties and potential applications of epsilon-GaSe at terahertz frequencies", J Opt Soc Am B, 26: 58-65, (2009)
• Nazarov M. M., Shkurinov A. P., Angeluts A. A. and Sapozhnikov D. A., "On the Choice of Nonlinear Optical and Semiconductor Converters of Femtosecond Laser Pulses into Terahertz Range", Radiophys Quant El, 52: 536-545, (2009)
• Segura A., Bouvier J., Andres M. V., Manjon F. J. and Munoz V., "Strong optical nonlinearities in gallium and indium selenides related to inter-valence-band transitions induced by light pulses", Phys Rev B, 56: 4075-4084, (1997)
• Allakhverdiev K. R., Yetis M. O., Ozbek S., Baykara T. K. and Salaev E. Y., "Effective nonlinear GaSe crystal. Optical properties and applications", Laser Phys, 19: 1092-1104, (2009)
• Fernelius N. C., "Properties of Gallium Selenide Single-Crystal", Prog Cryst Growth Ch, 28: 275-353, (1994)
• Singh N. B., Suhre D. R., Balakrishna V., Marable M., Meyer R., Fernelius N., Hopkins F. K. and Zelmon D., "Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications", Prog Cryst Growth Ch, 37: 47-102, (1998)
• Abdullaev G. B., Kulevskii L. A., Nikles P. V., Prokhorov A. M., Savelev A. D., Salaev E. Y. and Smirnov V. V., "Emission of Difference Frequency from Ga Se Crystal with Continuous Tuning over Range of 560-1050 Cm-1", Kvantovaya Elektron, 3: 163-167, (1976)
• Allakhverdiev K. R., Guliev R. I., Salaev E. Y. and Smirnov V. V., "An Investigation of Linear and Non-Linear Optical-Properties of Gasxse1-X Crystals", Kvantovaya Elektron, 9: 1483-1485, (1982)
• Huang J. G., Huang Z. M., Tong J. C., Ouyang C., Chu J. H., Andreev Y., Kokh K., Lanskii G. and Shaiduko A., "Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation", Appl Phys Lett, 103: 081104, (2013)
• Zhang H. Z., Kang Z. H., Jiang Y., Gao J. Y., Wu F. G., Feng Z. S., Andreev Y. M., Lanskii G. V., Morozov A. N., Sachkova E. I. and Sarkisov S. Y., "SHG phase matching in GaSe and mixed GaSe1-xSx, x <= 0.412, crystals at room temperature", Opt Express, 16: 9951-9957, (2008)
• Yuksek M., Elmali A., Karabulut M. and Mamedov G. M., "Switching from negative to positive nonlinear absorption in p type 0.5 at% Sn doped GaSe semiconductor crystal", Opt Mater, 31: 1663-1666, (2009)
• Yuksek M., Elmali A., Karabulut M. and Mamedov G. M., "Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals", Appl Phys B-Lasers, 98: 77-81, (2010)
• Singh N. B., Suhre D. R., Rosch W., Meyer R., Marable M., Fernelius N. C., Hopkins F. K., Zelmon D. E. and Narayanan R., "Modified GaSe crystals for mid-IR applications", J Cryst Growth, 198, 588-592, (1999)
• Das S., Ghosh C., Voevodina O. G., Andreev Y. M. and Sarkisov S. Y., "Modified GaSe crystal as a parametric frequency converter", Appl Phys B-Lasers, 82: 43-46, (2006)
• Zhang Y. F., Wang R., Kang Z. H., Qu L. L., Jiang Y., Gao J. Y., Andreev Y. M., Lanskii G. V., Kokh K. A., Morozov A. N., Shaiduko A. V. and Zuev V. V., "AgGaS2- and Al-doped GaSe Crystals for IR Applications", Opt Commun, 284: 1677-1681, (2011)
• Abdinov A. S., Babaeva R. F., Ragimova N. A., Rzaev R. M. and Amirova S. I., "Effects of temperature and rare-earth doping on the transport properties of GaSe crystals", Inorg Mater, 50: 334-338, (2014)
• Kim C. D., Jang K. W. and Lee Y. I., "Optical properties of Tm-doped GaSe single crystals", Solid State Commun, 130: 701-704, (2004)
• Tagiyev B.G., M. R. S., Aydayev F.S. and Abbasova T.M., "Mechanism of current passage and excitation of electroluminescence in GaSe:Er monocrystals", Semicond. Phys. Quant. Electron. Optoelectron, 5: 261-263, (2002)
• Feng Z. S., Guo J., Xie J. J., Zhang L. M., Gao J. Y., Andreev Y. M., Izaak T. I., Kokh K. A., Lanskii G. V., Shaiduko A. V., Shabalina A. V. and Svetlichnyi V. A., "GaSe:Er3+ crystals for SHG in the infrared spectral range", Opt Commun, 318: 205-211, (2014)
• Karatay A., Yuksek M., Ertap H., Mak A. K., Karabulut M. and Elmali A., "Influence of boron concentration on nonlinear absorption and ultrafast dynamics in GaSe crystals", Opt Mater, 60: 74-80, (2016)
• Nathan V., Guenther A. H. and Mitra S. S., "Review of Multiphoton Absorption in Crystalline Solids", J Opt Soc Am B, 2: 294-316, (1985)
• Lee C. C. and Fan H. Y., "2-Photon Absorption with Exciton Effect for Degenerate Valence Bands", Phys Rev B, 9: 3502-3516, (1974)
• Fan Y. X., He J. L., Wang Y. G., Liu S., Wang H. T. and Ma X. Y., "2-ps passively mode-locked Nd : YVO4 laser using an output-coupling-type semiconductor saturable absorber mirror", Appl Phys Lett, 86: 10, (2005)
• He J. L., Fan Y. X., Du J., Wang Y. G., Liu S., Wang H. T., Zhang L. H. and Hang Y., "4-ps passively mode-locked Nd : Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror", Opt Lett, 29: 2803-2805, (2004)
• He G. S., Markowicz P. P., Lin T. C. and Prasad P. N., "Observation of stimulated emission by direct three-photon excitation", Nature, 415: 767-770, (2002)
• Maciel G. S., Rakov N., de Araujo C. B., Lipovskii A. A. and Tagantsev D. K., "Optical limiting behavior of a glass-ceramic containing sodium niobate crystallites", Appl Phys Lett, 79: 584-586, (2001)
• Sheikbahae M., Said A. A., Wei T. H., Hagan D. J. and Vanstryland E. W., "Sensitive Measurement of Optical Nonlinearities Using a Single Beam", Ieee J Quantum Elect, 26: 760-769, (1990)
• Bacioglu A., Ertap H., Karabulut M. and Mamedov G. M., "Sub-bandgap analysis of boron doped In Se single crystals by constant photocurrent method", Opt Mater, 37: 70-73, (2014)
• Pankove J.I., "Optical Process in Semiconductors", Dover Publications: New York, 1971.
• Yuksek M., Karatay A., Ertap H., Elmali A. and Karabulut M., "Frequency conversion, nonlinear absorption and carrier dynamics of GaSe:B/Er crystals", Opt Mater, 66: 137-141, (2017)
• Dabbicco M. and Brambilla M., "Dispersion of the two-photon absorption coefficient in ZnSe", Solid State Commun, 114: 515-519, (2000)
• Shah J., "Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures", Springer: Berlin, 1999.
• Kulibekov A. M., Allakhverdiev K., Guseinova D. A., Salaev E. Y. and Baran O., "Optical absorption in GaSe under high-density ultrashort laser pulses", Opt Commun, 239: 193-198, (2004)
• Adduci F., Catalano I. M., Cingolani A. and Minafra A., "Direct and Indirect 2-Photon Processes in Layered Semiconductors", Phys Rev B, 15: 926-931, (1977)
• Allakhverdiev K. R., Baykara T., Joosten S., Gunay E., Kaya A. A., Kulibekov A., Seilmeier A. and Salaev E. Y., "Anisotropy of two-photon absorption in gallium selenide at 1064 nm", Opt Commun, 261: 60-64, (2006)
• Allakhverdiev K. R., "Two-photon absorption in layered TlGaSe2, TlInS2, TlGaS2 and GaSe crystals", Solid State Commun, 111: 253-257, (1999)
• Imangholi B., Hasselbeck M. P. and Sheik-Bahae M., "Absorption spectra of wide-gap semiconductors in their transparency region", Opt Commun, 227: 337-341, (2003)
• Walter E. B., "Ultrashort Processes in Condensed Matter", Springer: New York, 1993.
• Vanstryland E. W., Sheikbahae M., Said A. A., Hagan D. J. and Soileau M. J., "Characterization of Nonlinear-Optical Materials. Laser-Induced Damage in Optical Materials", 2114: 444-468, (1994)
• Cheng L. T., Cheng L. K., Harlow R. L. and Bierlein J. D., "Blue-Light Generation Using Bulk Single-Crystals of Niobium-Doped Ktiopo4", Appl Phys Lett, 64: 155-157, (1994)
• Joseph D.P. and V. C., "Bandgap Engineering in ZnO By Doping with 3d Transition Metal Ions", Journal of Atomic, Molecular, and Optical Physics, 2011: 1-7, (2011)
• Kushwaha S. K., Maurya K. K., Haranath D. and Bhagavannarayana G., "The effect of Cr3+ doping on the crystalline perfection and optical properties of zinc tris(thiourea)sulfate, a nonlinear optical material", J Appl Crystallogr, 44: 1054-1061, (2011)
• D.N., N., "Nonlinear Optical Crystals: a Complete Survey", Springer: USA, 2005.
• Tao X., Mafi E. and Gu Y., "Ultrafast carrier dynamics in single-crystal In2Se3 thin layers", Appl Phys Lett, 103: 193115, (2013)