Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure

Öz

Structural properties of AlN buffer layers, grown by Metal Organic Chemical Vapor Deposition (MOCVD) on 4H-SiC substrate with thicknesses of 61.34, 116.88, 129.46 and 131.50 nm, are investigated by High Resolution X-Ray Diffraction (HR-XRD) technique. Interfacial roughness of AlN buffer layer was determined by XRR technique. The interface roughness value of 131.50 nm thick sample is determined as 0.50 nm. Mosaic defects, tilt angle, vertical and lateral coherence lengths are characterized by HR-XRD technique. The edge and screw dislocations of the 131.50 nm thick sample are found as 2.98x1010 and 8.86x108 cm-2 respectively. The results indicate that 131.50 nm thick AlN buffer layer should be used in order to gain high performance in optoelectronic terms in this study. Thus, optimization of AlN buffer layer thickness is extremely important in device performance.

Anahtar Kelimeler

• MOCVD,AlN,HR-XRD,XRR,Mosaic defect

Kaynakça

1. [1] Morkoç H., Cingolania R., Gil B., “Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors”, Solid-State Electronics, 43: 1753-1771, (1999).
2. [2] Prazmowska J., Korbutowicz R., Wosko M., Paszkiewicz R., Kovac J., Srnanek R., Tłaczała M., “Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers”, Acta Physica Polonica A, 116: 123-125, (2009).
3. [3] Lan Y., Chen L., Cao G., Xu L., Xun D., Xu T., Liang J., “Low-temperature synthesis and photoluminescence of AlN”, Journal of Crystal Growth, 207: 247-250, (1999).
4. [4] Cao G., Chen L., Lan Y., Li J., Xu Y., Xu T., Liu Q., Liang J., “Blue emission and Raman scattering spectrum from AlN nanocrystalline powders”, Journal of Crystal Growth, 213: 198-202, (2000).
5. [5] Ponce F., Van de Walle C., Northrup J., “Atomic arrangement at the AlN/SiC interface”, Physical Review B, 53: 7473-7478, (1996).
6. [6] Ponce F., Krusor B., Major S., Plano W., Welch D., “Microstructure of GaN epitaxy on SiC using AlN buffer layers”, Applied Physics Letters, 67: 410-412, (1995).
7. [7] Huang W., Chu C., Wong Y., Chen W., Lin K., Wu H., Lee W., Chang E., “Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures”, Materials Science in Semiconductor Processing, 45: 1-8, (2016).
8. [8] Brubaker M., Levin I., Davydov V., Rourke D., Sanford N., Bright V., Bertness K., “Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy”, Journal of Applied Physics, 110: 053506-1-7, (2011).

9. [9] Singh N., Berghmans A., Zhang H., Wait T., Clarke R., Zingaro J., Golombeck J., “Physical vapor transport growth of large AlN crystals”, Journal of Crystal Growth, 250: 107–112, (2003).
10. [10] Stockmeier M., Müller R., Sakwe S., Wellmann P., Mager A., “On the lattice parameters of silicon carbide”, Journal of Applied Physics, 105: 033511-4, (2009).
11. [11] Kiyu D., “Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (1 1 1)”, Solid State Electronics, 51: 7, (2007).
12. [12] Marchand H., Zhang N., Zhao L., Golan Y., Rosner S., Girolami G., Paul T., Ibbetson J., Keller S., Den Baars S., Speck J., Mishra U., “Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer”, MRS Internet journal of nitride semiconductor research, (2014).
13. [13] Çörekçi S., Öztürk M., Akaoğlu B., Çakmak M., Özçelik S., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, Journal of Applied Physics, 101: 123502-1-4, (2007).
14. [14] Cörekçi S., Dugan S., Ozturk M., Cetin S., Cakmak M., Ozcelik S., Ozbay E., “Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness”, Journal of Electronic Materials, 45: 3278-3284, (2016).
15. [15] Moram M., Vickers E., “X-ray diffraction of III-nitrides”, Rep Prog Physics, 72: 1-40, (2009).
16. [16] Chierchia R., Wttcher T., Heinke H., Einfeldt S., Figge S., Hommel D., “Microstructure of heteroepitaxial GaN revealed by x-ray diffraction”, Journal of Applied Physics, 93: 8918-8925, (2003).
17. [17] Arslan E., Demirel P., Çakmak H., Öztürk M., Ozbay E., “Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate”, Advances in Materials Science and Engineering, 1-11, (2014).
18. [18] Bas Y.¸ Demirel., Akın N., Baskose C., Ozen Y., Kınacı B., Ozturk M., Ozcelik S., Ozbay E., “Microstructural defect properties of InGaN/GaN blue light emitting diode structures”, Journal of Materials Science: Mater Electron, 25: 3924–3932, (2014).
19. [19] Corekci S., Ozturk M., Cakmak M., Ozcelik S., Ozbay E., “The influence of thickness and ammonia flow rate on the properties of AlN layers”, Materials Science in Semiconductor Processing, 15: 32-36, (2012).
20. [20] Tamer M., Ozturk M., Corekci S., Bas Y., Gultekin A., Kurtulus G., Ozcelik S., Ozbay E., “Structural investigation of AlInN/AlN/GaN heterostructures”, Journal of Materials Science: Mater Electron, 27: 2852-2859, (2016).
21. [21] Liu B., Zhang R., Xie Z., Lu H., Liu Q., “Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction”, Journal of Applied Physics, 103: 023504-1-4, (2008).
22. [22] Morse M., Wu P., Choi S., Kim T., Browm A., Losurdo M., Bruno G., “Structural and optical characterization of GaN heteroepitaxial films on SiC substrates”, Applied Surface Science, 253: 232–235, (2006).