Effects of Boron Doping into GaSe Semiconductor Crystals on Optical Limiting and Two Photon Absorption Properties

Yıl 2023, , 161 - 168, 27.03.2023

Elif Yıldız

https://doi.org/10.2339/politeknik.933320

Cited By: 1

Öz

Pure GaSe and 0.1%, 0.5% and 1% boron doped GaSe crystals were grown using vertical Bridgman-Stockbarger method. Two photon absorption and optical limiting properties of semiconductor crystals were investigated using open aperture Z-scan experimental setup. It has been observed that GaSe semiconductor crystals grown at different boron doping ratios exhibit two photon absorption and optical limiting behaviors at 1064 nm wavelength and 4 nanosecond pulse duration. It is concluded that the two photon absorption properties of semiconductor crystals increase with the percentage of boron doping. Among the studied semiconductor crystals, it was observed that 1% boron doped GaSe crystal demonstrated the best optical limiting behavior at low input flux value. According to the open aperture Z-scan experimental results, it was concluded that the two photon absorption and optical limiting properties of semiconductor crystals can be controlled by the doping ratio of boron atoms into the crystal.

Anahtar Kelimeler

Open aperture Z-scan technique, Two photon absorption, Optical limiting

GaSe Yarıiletken Kristallerine Bor Katkılamanın Optik Sınırlama ve İki Foton Soğurma Özellikleri Üzerine Etkileri

Öz

Saf GaSe ve %0,1, %0,5 ve %1 oranlarında bor katkılı GaSe kristalleri dikey Bridgman-Stockbarger yöntemi kullanılarak büyütülmüştür. Yarıiletken kristallerin iki foton soğurma ve optik sınırlama özellikleri açık yarık Z tarama deney düzeneği kullanılarak incelenmiştir. Farklı bor katkılama oranlarında büyütülen GaSe yarıiletken kristaller 1064 nm dalga boyunda ve 4 nanosaniye atma süresinde iki foton soğurma ve optik sınırlama davranışları sergilediği gözlenmiştir. Yarıiletken kristallerin iki foton soğurma özelliklerinin bor katkılama yüzdesiyle arttığı sonucuna ulaşılmıştır. Çalışılan yarıiletken kristallerden %1 bor katkılı GaSe kristalinin, düşük giriş akısı değerinde en iyi optik sınırlama davranışı sergilediği görülmüştür. Yapılan açık yarık Z-tarama deney sonuçlarına göre, yarıiletken kristallerin iki foton soğurma ve optik sınırlama özellikleri kristal içerisine yapılan bor atomlarının katkılama yüzdesi ile kontrol edilebilmektedir.

Anahtar Kelimeler

Açık yarık Z-tarama tekniği, İki foton soğurma, Optik sınırlama

Kaynakça

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