Deposition and Characterization of ZnSnSe2 Thin-Films Deposited by Using Sintered Stoichiometric Powder

Yıl 2019, Cilt: 22 Sayı: 3, 649 - 653, 01.09.2019

Özge Bayraklı Sürücü Hasan Hüseyin Güllü

https://doi.org/10.2339/politeknik.468893

Cited By: 1

Öz

In this work, ZnSnSe2 (ZTSe) thin
films were deposited using crystalline powder grown by vertical
Bridgman-Stockbarger technique. The deposition process was carried out by means
of e-beam evaporation on the well-cleaned soda lime glass substrates and
keeping them at the substrate temperature of 200°C. The structural, optical and
electrical properties of ternary ZTSe thin films were investigated depending on
the annealing temperature at 250 and 300°C. X-ray diffraction analysis showed
that as-grown films were in amorphous structure, however annealing at 250°C
triggered the crystallization on the preferred ternary structure and annealing
at 300°C resulted in the changes from amorphous to the polycrystalline
structure. Using the compositional analysis, the detail information about the
stoichiometry and the segregation mechanisms of the constituent elements in the
structure were determined for both as-grown and annealed samples. In addition,
they were morphologically characterized using scanning electron microscopy
technique. The electrical properties were analyzed using temperature dependent
dark- and photo-conductivity measurements. From the variation of electrical
conductivity as a function of the ambient temperature, the current transport
mechanisms and corresponding activation energies at specific temperature
intervals for each sample were determined. The optical properties for the ZTSe
thin films were studied depending on the structural changes with annealing.

Anahtar Kelimeler

Thin film, deposition, characterization

Kaynakça

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