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Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications

Yıl 2023, Cilt: 26 Sayı: 1, 209 - 214, 27.03.2023
https://doi.org/10.2339/politeknik.873160

Öz

Transparent Conductive Oxide (TCO) films are widely used in optoelectronic devices, such as solar cells, LEDs, and Lasers. Utilization of these contacts directly affects the device efficiencies. Purpose of this study is to produce and optimize properties of Aluminum doped Zinc Oxide (AZO) using a vapor phase technique, Atomic Layer Deposition (ALD) for (n+) a-Si:H surface of silicon Heterojunction Solar Cells (HJSCs) and High Electron Mobility Transistor (HEMT) applications. This study is focused on the effect of the deposition temperature and aluminum atomic concentration on structural, electrical and optical properties of ALD grown AZO ohmic contact films. The results show that as-deposited films have 80-90% transmittance in the visible spectra, low resistance (2.04x10-3 ohm.cm) and mobility value of 5.25 cm2/V.s.

Kaynakça

  • [1] Novák P., “Possibilities of Increasing the Usability of Sputtered AZO Films as a Transparent Electrode”, Physica Status Solidi (A), 216(7): 1–10, (2019).
  • [2] Sharma S., Shriwastava S., Kumar S., Bhatt K., and Tripathi C.C., “Alternative transparent conducting electrode materials for flexible optoelectronic devices”, Opto-Electronics Review, 26(3): 223–235, (2018).
  • [3] Deen D. A., Storm D. F., Katzer D. S., Meyer D. J., and Binari S. C., “Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures” Solid-State Electronics, 54(6): 613–615, (2010).
  • [4] Mat Desa M. K., Sapeai S., Azhari A. W., Sopian K., Sulaiman M. Y., Amin N., and Zaidi S. H., “Silicon back contact solar cell configuration: A pathway towards higher efficiency”, Renewable and Sustainable Energy Reviews, 60: 1516–1532, (2016).
  • [5] Dullweber T., and Schmidt J., “Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept-A Review”, IEEE Journal of Photovoltaics, 6(5): 1366–1381, (2016).
  • [6] Korte L., Conrad E., Angermann H., Stangl R., and Schmidt M., “Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization” Solar Energy Materials and Solar Cells, 93(6–7): 905–910, (2009).
  • [7] Khan F., Baek S. H., Singh,S. N., Singh P. K., and Kim J. H., “Effective passivation of silicon surface by AZO films: Application in bifacial solar cells” Solar Energy, 97: 474–483, (2013).
  • [8] Cai S. J., Li R., Chen Y. L., Wong L., Wu,W. G., Thomas S. G., and Wang K. L., “High performance AlGaN/GaN HEMT with improved ohmic contacts” Electronics Letters, 34(24): 2354–2356, (1998).
  • [9] Zeng F., An J.X., Zhou G., Li W.,Wang H., Duan T., Jlang L., and Yu H. “A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability”, Electronics (Switzerland), 7(12): 377, (2018).
  • [10] Nirmal A., “Handbook for III-V High Electron Mobility Transistor Technologies (Vol.3)”, CRC Press, New York, (2019).
  • [11] Feng Q., Li L. M., Hao Y., Ni J. Y., and Zhang J. C., “The improvement of ohmic contact of Ti/Al/Ni/Auto AlGaN/GaN HEMT by multi-step annealing method”, Solid-State Electronics, 53(9): 955–958, (2009).
  • [12] Soltani A., BenMoussa A., Touati S., Hoël V., De Jaeger J. C., Laureyns J., Cordier Y, Marhic C., Djouadi M.A., and Dua, C., “Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT”, Diamond and Related Materials, 16(2): 262–266, (2007).
  • [13] Deen D. A., Storm D. F., Katzer D. S., Meyer D. J., and Binari S. C., “Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures”, Solid-State Electronics, 54(6): 613–615, (2010).
  • [14] Piazza M., Dua C., Oualli M., Morvan E., Carisetti D., and Wyczisk F., “Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs “, Microelectronics Reliability, 49(9–11): 1222–1225 (2009).
  • [15] Leone S., Brueckner P., Kirste L., Doering P., Fuchs T., Mueller S., Prescher M., Quay R., and Ambacher O., “Optimization of Metal-Organic Chemical Vapor Deposition Regrown n-GaN”, Physica Status Solidi (B) Basic Research, 257(3): , 1900436 (2020).
  • [16] Yu H., McCarthy L., Keller S., Denbaars S., Speck J., and Mishra U., “Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts”, IEEE Electron Device Letters, 26 (5): 283-285, (2005).
  • [17] Banerjee P., Lee W., Bae K., Lee S.B., and Rubloff G.W. “Structural , electrical , and optical properties of atomic layer deposition Al- doped ZnO films”, Journal of Apllied Physics, 108: 043504 (2010).
  • [18] Luka G, Krajewski TA, Witkowski BS, Wisz G., Virt I.S., Guziewicz E., and Godlewski M., “Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications”, Journal of Materials Science: Materials in Electronics, 22:1810-1815 (2010).

AlGaN/GaN Temelli YEMT ve Heteroeklem Güneş Hücreleri Için ALD Yöntemi ile Alüminyum Katkılı Çinko Oksit(AZO) Geliştirme

Yıl 2023, Cilt: 26 Sayı: 1, 209 - 214, 27.03.2023
https://doi.org/10.2339/politeknik.873160

Öz

Transparan İletken Oksit (TCO) ince filmler günümüzde güneş pilleri, LED’ler, lazerler gibi optoelektronik cihazlarda sıklıkla kullanılmaktadır. Bu kontakların kullanımı cihazların verimliliğini doğrudam etkilemektedir. Bu çalışmanın amacı heteroeklemli güneş hücrelerinin (HJSCs) (n+) a-Si:H yüzünde ve yüksek elektron hareketliliği olan tranzistörlerde (HEMT) kullanmak üzere atomik katman kaplama (ALD) tekniği kullanarak alüminyum katkılı çinko oksit (AZO) üretmek ve optimize etmektir. Bu çalışmada büyütme sıcaklığı ve alüminyum katkılama oranının ALD’de büyütülmüş AZO’nun yapısal, elektriksel ve optik özelliklerine etkisi çalışılmıştır.Sonuçlar göstermiştir ki filmler görünür bölgede %80-90 arasında ışık geçirgenliğine, düşük elektriksel rezistansa (2.04x10-3 ohm.cm) ve 5.25 cm2/V.s değerinde mobiliteye sahiptir.

Kaynakça

  • [1] Novák P., “Possibilities of Increasing the Usability of Sputtered AZO Films as a Transparent Electrode”, Physica Status Solidi (A), 216(7): 1–10, (2019).
  • [2] Sharma S., Shriwastava S., Kumar S., Bhatt K., and Tripathi C.C., “Alternative transparent conducting electrode materials for flexible optoelectronic devices”, Opto-Electronics Review, 26(3): 223–235, (2018).
  • [3] Deen D. A., Storm D. F., Katzer D. S., Meyer D. J., and Binari S. C., “Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures” Solid-State Electronics, 54(6): 613–615, (2010).
  • [4] Mat Desa M. K., Sapeai S., Azhari A. W., Sopian K., Sulaiman M. Y., Amin N., and Zaidi S. H., “Silicon back contact solar cell configuration: A pathway towards higher efficiency”, Renewable and Sustainable Energy Reviews, 60: 1516–1532, (2016).
  • [5] Dullweber T., and Schmidt J., “Industrial Silicon Solar Cells Applying the Passivated Emitter and Rear Cell (PERC) Concept-A Review”, IEEE Journal of Photovoltaics, 6(5): 1366–1381, (2016).
  • [6] Korte L., Conrad E., Angermann H., Stangl R., and Schmidt M., “Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization” Solar Energy Materials and Solar Cells, 93(6–7): 905–910, (2009).
  • [7] Khan F., Baek S. H., Singh,S. N., Singh P. K., and Kim J. H., “Effective passivation of silicon surface by AZO films: Application in bifacial solar cells” Solar Energy, 97: 474–483, (2013).
  • [8] Cai S. J., Li R., Chen Y. L., Wong L., Wu,W. G., Thomas S. G., and Wang K. L., “High performance AlGaN/GaN HEMT with improved ohmic contacts” Electronics Letters, 34(24): 2354–2356, (1998).
  • [9] Zeng F., An J.X., Zhou G., Li W.,Wang H., Duan T., Jlang L., and Yu H. “A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability”, Electronics (Switzerland), 7(12): 377, (2018).
  • [10] Nirmal A., “Handbook for III-V High Electron Mobility Transistor Technologies (Vol.3)”, CRC Press, New York, (2019).
  • [11] Feng Q., Li L. M., Hao Y., Ni J. Y., and Zhang J. C., “The improvement of ohmic contact of Ti/Al/Ni/Auto AlGaN/GaN HEMT by multi-step annealing method”, Solid-State Electronics, 53(9): 955–958, (2009).
  • [12] Soltani A., BenMoussa A., Touati S., Hoël V., De Jaeger J. C., Laureyns J., Cordier Y, Marhic C., Djouadi M.A., and Dua, C., “Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT”, Diamond and Related Materials, 16(2): 262–266, (2007).
  • [13] Deen D. A., Storm D. F., Katzer D. S., Meyer D. J., and Binari S. C., “Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures”, Solid-State Electronics, 54(6): 613–615, (2010).
  • [14] Piazza M., Dua C., Oualli M., Morvan E., Carisetti D., and Wyczisk F., “Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs “, Microelectronics Reliability, 49(9–11): 1222–1225 (2009).
  • [15] Leone S., Brueckner P., Kirste L., Doering P., Fuchs T., Mueller S., Prescher M., Quay R., and Ambacher O., “Optimization of Metal-Organic Chemical Vapor Deposition Regrown n-GaN”, Physica Status Solidi (B) Basic Research, 257(3): , 1900436 (2020).
  • [16] Yu H., McCarthy L., Keller S., Denbaars S., Speck J., and Mishra U., “Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts”, IEEE Electron Device Letters, 26 (5): 283-285, (2005).
  • [17] Banerjee P., Lee W., Bae K., Lee S.B., and Rubloff G.W. “Structural , electrical , and optical properties of atomic layer deposition Al- doped ZnO films”, Journal of Apllied Physics, 108: 043504 (2010).
  • [18] Luka G, Krajewski TA, Witkowski BS, Wisz G., Virt I.S., Guziewicz E., and Godlewski M., “Aluminum-doped zinc oxide films grown by atomic layer deposition for transparent electrode applications”, Journal of Materials Science: Materials in Electronics, 22:1810-1815 (2010).
Toplam 18 adet kaynakça vardır.

Ayrıntılar

Birincil Dil İngilizce
Konular Mühendislik
Bölüm Araştırma Makalesi
Yazarlar

Deniz Tugrul 0000-0001-6475-5945

Hüseyin Çakmak 0000-0003-3452-1886

Ekmel Özbay 0000-0003-2953-1828

Bilge İmer 0000-0002-7336-5508

Yayımlanma Tarihi 27 Mart 2023
Gönderilme Tarihi 4 Şubat 2021
Yayımlandığı Sayı Yıl 2023 Cilt: 26 Sayı: 1

Kaynak Göster

APA Tugrul, D., Çakmak, H., Özbay, E., İmer, B. (2023). Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications. Politeknik Dergisi, 26(1), 209-214. https://doi.org/10.2339/politeknik.873160
AMA Tugrul D, Çakmak H, Özbay E, İmer B. Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications. Politeknik Dergisi. Mart 2023;26(1):209-214. doi:10.2339/politeknik.873160
Chicago Tugrul, Deniz, Hüseyin Çakmak, Ekmel Özbay, ve Bilge İmer. “Development of AZO TCOs With ALD for HEMT and HJSC Solar Cell Applications”. Politeknik Dergisi 26, sy. 1 (Mart 2023): 209-14. https://doi.org/10.2339/politeknik.873160.
EndNote Tugrul D, Çakmak H, Özbay E, İmer B (01 Mart 2023) Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications. Politeknik Dergisi 26 1 209–214.
IEEE D. Tugrul, H. Çakmak, E. Özbay, ve B. İmer, “Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications”, Politeknik Dergisi, c. 26, sy. 1, ss. 209–214, 2023, doi: 10.2339/politeknik.873160.
ISNAD Tugrul, Deniz vd. “Development of AZO TCOs With ALD for HEMT and HJSC Solar Cell Applications”. Politeknik Dergisi 26/1 (Mart 2023), 209-214. https://doi.org/10.2339/politeknik.873160.
JAMA Tugrul D, Çakmak H, Özbay E, İmer B. Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications. Politeknik Dergisi. 2023;26:209–214.
MLA Tugrul, Deniz vd. “Development of AZO TCOs With ALD for HEMT and HJSC Solar Cell Applications”. Politeknik Dergisi, c. 26, sy. 1, 2023, ss. 209-14, doi:10.2339/politeknik.873160.
Vancouver Tugrul D, Çakmak H, Özbay E, İmer B. Development of AZO TCOs with ALD for HEMT and HJSC Solar Cell Applications. Politeknik Dergisi. 2023;26(1):209-14.
 
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